80A RECTIFIER CHARGER Search Results

Contextual Info: RURG8060_F085 80A, 600V Ultrafast Rectifier Features 80A, 600V Ultrafast Rectifier • High Speed Switching trr=74ns(Typ. @ IF=80A ) The RURG8060_F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: RURG8060_F085 80A, 600V Ultrafast Rectifier Features 80A, 600V Ultrafast Rectifier • High Speed Switching trr=74ns(Typ. @ IF=80A ) The RURG8060_F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: Advance Technical Information IXFK80N50Q3 IXFX80N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 500V 80A Ω 65mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK80N50Q3 IXFX80N50Q3 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 500V 80A Ω 65mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings

E.78996

Abstract: ir e.78996 IRK 160 78996 D171 D172 D173 D174 3 phase plating rectifier
Contextual Info: •I International HRectifier s e r ie s ir k .61, HIGH VOLTAGE DIODES .81, .101 NEW ADD-A-pak Power Modules INTERNATIONAL RECTIFIER Features ■ ■ ■ ■ ■ ■ ■ ■ ■ 4055452 0Qlbb47 «Ì37 ■ INR bSE T> 60A 80A 100A High voltage E lectrically isolated base plate

80D CABINET

Abstract: CC109142980 CC408574395 QS865ATEZ LSC-2030 QS861ATEZ CS787B540 JA-CPS6-001LP QS873A CPS2000
Contextual Info: PRODUCT OVERVIEW OSP Retrofit Power System Cost-effective Energy Efficiency Upgrade Benefits Reliability – Extends the lifecycle of deployed CPS2000, CPS4000, OLS and SLC power plants – Proven field performance – Controller continuity Intelligence • Preserves distribution and

3 phase bridge rectifier 400HZ

Abstract: 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz
Contextual Info: Products and Solutions Sensitron Semiconductor • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 143-0209 Fully Integrated Motor Controllers

18 ML 2A ptc

Abstract: Q6025LX FHN20G FHN26G2 pico electronics transformers 1500w tvs diode SMD FHN26G2, ROHS DIODE 3A do-214 RECTIFIER D6025L 1.5ke series
Contextual Info: CIRCUIT PROTECTION SOLUTIONS Electronics Circuit Protection Product Selection Guide DO W Lit N te LO lfu A se D .co C m AT /c A at LO alo G gs S A guide to selecting Littelfuse circuit protection components for electronic applications. Broadest and Deepest

IXFN80N50Q2

Contextual Info: IXFN80N50Q2 HiperFETTM Power MOSFET Q2-Class VDSS ID25 RDS on trr = =   500V 72A  65m 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M

ISOPLUS247

Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings

Contextual Info: IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 66A  77m 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR

IXFR80N60P3

Contextual Info: IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 48A  85m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M

IXFR80N50Q3

Contextual Info: Preliminary Technical Information IXFR80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 50A Ω 72mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions

Contextual Info: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFN80N50Q3 RDS on trr = = ≤ ≤ 500V 63A Ω 65mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXFN80N60

Abstract: IXFN80N60P3
Contextual Info: Advance Technical Information IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

n-channel 250V 80a power mosfet

Contextual Info: Advance Technical Information IXFR80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 45A Ω 72mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN80N60P3 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings

80N60

Contextual Info: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Ixfn80n50q3

Contextual Info: Advance Technical Information IXFN80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 63A Ω 65mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFR80N60P3 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: PIXYS AdvancedTechnioal Information HiPerFET Power MOSFETs IXFR 80N20Q ISOPLUS247™, Q-Class Electrically Isolated Back Surface VOSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr <200 ns Symbol Test Conditions Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 VDSS ID25 = 500 V = 80 A Ω = 50 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

125OC

Abstract: IXFK72N20 IXFK80N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C