IXFK80N20 Search Results

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

125OC

Abstract: IXFK72N20 IXFK80N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

80N20

Abstract: TEA 2029 A
Contextual Info: IÖIXYS HiPerFET Power MOSFETs v p DSS ^D25 DS on 200 V 72 A 35 mû 200 V 80 A 30 m a t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VOSS Tj = 2 5 °C tO l50°C

72N2

Abstract: diode 253 SMD-264 TO-264-aa 80N20
Contextual Info: OIXYS Preliminary data vDSS HiPerFET Power MOSFETs ^D25 RDS on 200 V 72 A 35 mQ 200 V 80 A 30 mQ t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t„ Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS IXFH/IXFT68N20 IXFH/IXFT74N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 68N20 IXFH/IXFT 74N20 RDS on 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings ID25 Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V

74N20

Abstract: IXFH68N20 IXFK72N20 IXFK80N20 68N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 68N20 IXFH/IXFT 74N20 RDS on 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings ID25 Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V

Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH/IXFT68N20 IXFH/IXFT74N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings TO-247 AD IXFH V DSS Td = 25°C to 150°C 200 V vDGR Td = 25°C to 150°C; RGS = 1 M£i

TOp-264 vg

Contextual Info: □ IXYS Preliminary data V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS VGSM Continuous ±20

ne 22 mosfet

Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)