800V IRF Search Results

Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: IRFAE50 diode 71A
Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: IRFAE30
Contextual Info: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: IRFAE40
Contextual Info: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

1RFPE50

Abstract: IRFPE50 rd520
Contextual Info: PD-9.573B International IRFPE50 ë |r]Rectifier HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^dss - 800V R DS on = 1

"VDSS 800V" mosfet

Abstract: IRFBE30L IRFBE30S
Contextual Info: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

CD 1517

Abstract: IRFIBE20G
Contextual Info: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =

Contextual Info: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

IRFBE30L

Abstract: IRFBE30S
Contextual Info: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

P-Channel MOSFET 800v

Abstract: IRFBE30L IRFBE30S IRL3103L
Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

800v irf

Abstract: IRFBE30L IRFBE30S 95507 irf 480
Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

P-Channel MOSFET 800v

Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

100-C

Abstract: IRFPE30
Contextual Info: P D -9 .6 1 2 A International S Rectifier IRFPE30 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements 800V V dss = R DS on = 3 0 ^

LV 1084

Abstract: IRFPE50
Contextual Info: PD-9.573B International S Rectifier IRFPE50 HEXFET P ow er M O S FE T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 800V ^D S on = 1

IRFPE40

Contextual Info: PD-9.578B International k?r Rectifier IRFPE40 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 800V ^ D S o n =

irfbe30

Contextual Info: PD-9.613A International I S Rectifier IRFBE30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 800V R DS on - 3 -0 ß lD = 4.1 A Description Third Generation HEXFETs from International Rectifier provide the designer

mosfet equivalent

Abstract: L03A YIHON MOSFET 800V 3A
Contextual Info: FU JI 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features 2 ,2 0 7A 80W > Outline Drawing TO-3PF - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications

Contextual Info: FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low Rds(0n) : 0.746 £1 (Typ.) LO CD ■ Q Avalanche Rugged Technology

Diode 188

Abstract: APT8016DFN APT7516DFN 7516-D 47Amps
Contextual Info: ADVANCED MIE POWER TECHNOLOGY 1 oaSTiai DÜDOS'IM S32 • I AVP ■ ADVANCED F O M fER _T-3>°h$„ I Techno lo g y O D 2> 0<2 à (fò APT8016DFN 800V 47.0A 0.16 Ï2 APT7516DFN 750V 47.0A 0.16 ¿1 0 3(2 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS

diode BYY 62

Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode
Contextual Info: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r

IRFNG50

Abstract: mosfet 10a 800v high power 91556A
Contextual Info: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

smd diode 39a

Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Contextual Info: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The