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    95507 Search Results

    95507 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    50295-5076ELF
    Amphenol Communications Solutions High Pin Count, Backplane Connectors, Receptacle, Right Angle, Through Hole, 4 Row, 76 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch PDF
    50295-5076FLF
    Amphenol Communications Solutions High Pin Count, Backplane Connectors, Receptacle, Right Angle, Through Hole, 4 Row, 76 Positions, 0 Guide Pin, 2.54mm (0.100in) Pitch PDF
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    95507 Price and Stock

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    Molex 112095-5071

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    Avnet Americas 112095-5071 Bulk 1
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    Bristol Electronics 112095-5071 8 1
    • 1 $449.60
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    Amphenol Corporation 10196955-071310LF

    - Tape and Reel (Alt: 10196955-071310LF)
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    Avnet Americas 10196955-071310LF Tape & Reel 10 Weeks 4,000
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    Mouser Electronics 10196955-071310LF
    • 1 $2.71
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    Samtec Inc TW-11-12-T-D-955-077

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    Newark TW-11-12-T-D-955-077 Bulk 1
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    Master Electronics TW-11-12-T-D-955-077
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    Phoenix Contact 1955073

    Pluggable Terminal Blocks 6 Pos 5.08mm pitch Through Hole Header
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    Mouser Electronics 1955073 325
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    Newark 1955073 Bulk 330
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    TME 1955073 330
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    Avnet Abacus 1955073 5 Weeks 330
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    Master Electronics 1955073
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    Vyrian 1955073 12,818
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    HARTING Technology Group 09195507324

    DIN 41612 Connectors 50P MALE STRT IDC HI TEMP LOW PROFILE
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    Mouser Electronics 09195507324 1
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    TME 09195507324 50
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    95507 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P-Channel MOSFET 800v

    Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
    Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original
    IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode PDF

    P-Channel MOSFET 800v

    Abstract: IRFBE30L IRFBE30S IRL3103L
    Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original
    IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 12-Mar-07 P-Channel MOSFET 800v IRFBE30L IRFBE30S IRL3103L PDF

    800v irf

    Abstract: IRFBE30L IRFBE30S 95507 irf 480
    Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original
    IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L EIA-418. 800v irf IRFBE30L IRFBE30S 95507 irf 480 PDF

    P-Channel MOSFET 800v

    Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original
    IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 08-Mar-07 P-Channel MOSFET 800v PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    D100-0041-0041

    Abstract: D100-0041-0061 teletilt D100-0041 D100004
    Contextual Info: Base Station Antennas PerforMax TM ANTENNA SPECIFICATIONS ANTENNA TYPE: D100-0041-0061 Description: Teletilt 824-960 MHz, single polarized, 65 degree azimuth beamwidth, 14.8 dBd gain panel antenna with 1-10 degrees of remote variable electrical downtilt


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    D100-0041-0061 -40dB D115V-05 D100-0041-0041 D100-0041-0061 teletilt D100-0041 D100004 PDF