80 V NPN EPITAXIAL SILICON TRANSISTOR Search Results

PN3567

Contextual Info: PN3567 NPN SILICON TRANSISTOR DESCRIPTION PN3567 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications. TO-92 EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V cbo 80 V Collector-Emitter Voltage V ceo 60 V Emitter-Base Voltage

Contextual Info: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V 80 V

BD439

Abstract: BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440 BD442
Contextual Info: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V

Contextual Info: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB1017 TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Symbol 80 V Collector Emitter Voltage V cE O 80 V Emitter Base Voltage

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POW ER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vottage Collector-Emitter Voltage VcBO 80 VcEO 80 V V Emitter-Base Voltage Collector Current

GE003

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 80 V Collector-Emitter Voltage V ceo 80 V Emitter-Base Voltage V ebo 5 V Collector Current

bd177

Abstract: BD175
Contextual Info: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175

Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80

MMBTA06LT1

Abstract: mbta06
Contextual Info: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage

MMBTA06

Contextual Info: MMBTA06 NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 80 V Emitter Base Voltage

MMBTA06LT1

Abstract: mbta06
Contextual Info: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage

MMBTA06

Contextual Info: MMBTA06 NPN Silicon Epitaxial Planar Small Signal Transistor for Switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 80 V Emitter Base Voltage

Contextual Info: Die no. D-16 NPN silicon transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm TO-92 Features available in TO-92 package; for packaging information, see page 448 ITT collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at

BD transistor

Abstract: BD NPN transistors BD175 transistor bd 126 BD 175 transistor transistor BD
Contextual Info: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80

bd177

Abstract: transistor bd177 BD175
Contextual Info: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 60 80 45 60 80 5 3 7 30 150 -6 5 ^ 1 5 0 V V V V V V V

KSD526

Abstract: KSB596
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD526 POW ER AMPLIFIER A PPLICATIO NS • Com plem ent to KSB596 A BSOLUTE M AXIMUM RATINGS Characteristic Symbol Rating Unit Col lector-Base Voltage V cB O 80 V C ollector-Em itter Voltage VcEO 80 V Emitter-Base Voltage V ebo

KSB1017

Abstract: KSD1408
Contextual Info: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V c bO Sym bol 80 V C ollecto r E m itter Voltage V cE O 80 V Em itter Base Voltage

1g marking

Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C/W V cB O : KST05 : KST06 Collector-Emitter Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD1408 POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollecto r Base Voltage V cbO 80 V C ollecto r E m itter Voltage V cE O 80 V E m itter Base Voltage

KST05

Abstract: KSP05 KST06
Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit 60 80 V V VEBO IC PC T STG 60 80 4 500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST05 :KST06 Collector-Emitter Voltage

NPN Transistor VCEO 80V 100V

Abstract: KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18
Contextual Info: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : KSE181 80 V : KSE182 100 V : KSE180 40 V : KSE181

Contextual Info: KSD1944 NPN EPITAXIAL SILICON TRANSISTOR HIGHp POWER TRANSISTOR TO-22QF ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic VcBQ Symbol 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V ebo 8 V Collector Current lc 3 A

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST05/06 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol C ollector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C /W V cbO : KST05 : KST06 C ollector-E m ltter Voltage

BD243

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BD243/A/B/C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD244, BD244A, BD244B and BD244C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V : BD243A 60 V : BD243B 80 V : BD243C