8 K X 8 BIT Search Results

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 12 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung K M 4 2 8 C 1 2 8 is a CMOS 1 2 8 K X 8 bit Dual Port DRAM. It consists ot a 1 2 8 K X 8 dynamic random

28c128

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 8 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 8 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random

Contextual Info: - D ata R A M / ROM bit 6k X 2 3 - - 8kx23 W ork RAM (bit) LCD segm ent Model No. I k x 8 /2 5 6 x 4 480 SM3503 1 5 1 2 X 8 /2 5 6 X 4 480 SM3504 < 5 1 2 X 8 /2 5 6 X 4 384 SM3507 2 k X 8 /2 5 6 X 4 540 SM3509 8 k X 8 /2 5 6 X 4 540 SM3512 MICROCOMPUTERS

Contextual Info: 8751H/8753H Single-Chip 8-Bit Microcontroller with 4K /8 K Bytes of EPROM DISTINCTIVE CHARACTERISTICS • • • • • • 4K X 8 EPROM 8751H ; 8 K x 8 EPROM (8753H) 1 2 8 x 8 RAM Four 8 -bit ports, 32 I/O lines; programmable serial port Two 16-bit Tim er/E vent counters

Contextual Info: 64K 32K 16K 8 K x 8 Bit 4 K x 8 Bit 2 K x 8 Bit X25648/49 X25328/29 X 25168/69 V cc Supervisory Circuit w/Serial E2PROM FEATURES DESCRIPTION • Low Vcc Detection and Reset Assertion — Reset Signal Valid to Vcc=1V • Save Critical Data With Block Lock Protection

Contextual Info: 64K 32K 16K X25643/45 X25323/25 X 25163/65 8 K x 8 Bit 4 K x 8 Bit 2 K x 8 Bit Programmable Watchdog Tim er & V qq Supervisory Circuit w/Serial E2PROM FEATURES DESCRIPTION • Programmable Watchdog Timer • Low Vcc Detection and Reset Assertion — Reset Signal Valid to Vcc=1V

AR332

Abstract: 8053 interfacing with 8051 duty cycle program in 8051 8031AH/8051AH/8053AH
Contextual Info: 8031AH/8051AH/8053AH Single-Chip 8-Bit Microcontroller DISTINCTIVE CHARACTERISTICS • • • • • • 4 K x 8 ROM 8051 only 8 K x 8 ROM (8053 only) 1 2 8 x 8 RAM Four 8-bit ports, 32 I/O lines Two 16-bit tim e r/e ven t counters 64K addressable Program Memory

.5555b

Abstract: 29F200 29F200 flash AS29 29f200 70 08000h-OFFFFh 29F200-55 29f200-90 AS29F200T
Contextual Info: H ig h p e r f o r m a n c e 2 S 6 K X 8 /1 2 8 K X 16 5V CM OS Flash EEPROM a | AS29F200 A 2 5 6 K X 8 /1 2 8 K X 1 6 CMOS Flash EEPROM Preliminaiy information Features • O r g a n iz a t io n : 2 5 6 K X 8 o r 1 2 8 K X 1 6 • S e c to r a r c h ite c tu r e

A17E

Abstract: CXK382001 CXK384001
Contextual Info: C X K 384001/382001 SONY 524,288 /262,144-word X 8-bit CMOS Mask Programmable ROM Description CXK384001 / 382001 is a CMOS m askprogram m able ROM organized as 5 2 4 ,2 8 8 w o rds by 8 -b it C X K 3 8 4 0 0 1 and 2 6 2 ,1 4 4 w o rds by 8-bit (C X K 382001). The chip enable

Contextual Info: Philips Semiconductors Preliminary specification 8 K x 8-bit static CMOS EEPROM with PAGE-ERASE option FEATURES GENERAL DESCRIPTION • Low Power CMOS The PCF29F64 is an 8 K x 8-bit floating gate electrically erasable programmable read only memory EEPROM ,

8751H

Abstract: ta 8751h 8753H variable oscillator Z1P21 4kx8 eprom
Contextual Info: 8751H/8753H Single-Chip 8-Bit Microcontroller MILITARY INFORMATION • • • • M ilitary Tem perature Range - - 5 5 to + 125°C Tc 4 K x 8 EPROM (8751); 8 K x 8 EPROM (8753) 1 2 8 x 8 RAM 64K bytes Program M em ory space 64K bytes Data M em ory space

vr4cu

Abstract: 945 mercury MOTHERBOARD CIRCUIT diagram 945 MOTHERBOARD CIRCUIT diagram 128MB PC3200 DDR CL3 VR4CU647228D VR4CU287228E PC2100 spd 3465 ddr pc3200 64m 72 single rank IDD3P
Contextual Info: DDRI UNBUFFERED DIMM VR4CUxxxx28xxx MODULE CONFIGURATIONS Non-ECC Module Device Configuration Configuration 128MB 16M x 64 16M x 8 bit 8 VR4CU166428C(*)H 128MB 16M x 64 16M x 8 bit (8) VR4CU166428C(*)K 128MB 16M x 64 16M x 8 bit (8) VR4CU166428C(*)P 256MB

DDA11A

Abstract: ma 6116 f6 tms 4408 d6d1 tele lg tv 29" circuits diagrams colour tv Pt 1000 sensor siemens Siemens norm SN 40 263
Contextual Info: SIEMENS Teletext Processor SD A 5243-2 Preliminary Data MOS 1C Features • • • • • • • • • Microcomputer controlled via I2C bus includes full memory access Uses standard 8 K x 8 static, 8 K x 8 dyn. or two 8 K x 4 dyn. RAMs Can store 8 teletext pages and acquire 4 pages simultaneously

A16Q2

Contextual Info: sony . C X K 5 8 1 1 0 O T M /Y M 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 10OTM /YM is a 1M bits, 131072 words by 8 bits, C M O S static RAM . It Is suitable for portable and C XK 58110OTM 32 pin TS O P Plastic C X K 58110OYM

2fu smd transistor

Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Contextual Info: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR

LH5268AD-10LL

Abstract: LH5268A
Contextual Info: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

128X512

Contextual Info: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128K x 8/64K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K x 8 (CY14B101LA) or 64 K x 16 (CY14B101NA) ■ Hands off automatic STORE on power down with only a small

CY14a101

Abstract: CY14V101LA-BA45 CY14A101L
Contextual Info: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small

80c535

Abstract: SAB83C515H-4J Wiring Diagram Siemens stt SAB80C515
Contextual Info: SIEMENS SAB 83C515H-3J / 83C515H-4J 8-Bit CMOS Microcontroller Advance Information SAB 83C515H-3J/83C515H-4J CMOS microcontroller with user programmable E2PROM • 8 K X 8 E2PROM SAB 83C515H-3J • 16-bit watchdog timer • 16 K x 8 E2PROM (SAB 83C515H-4J)

Contextual Info: SONY C X K 5865P /M « , 8 K-word x 8 bit High Speed CMOS Static RAM Description o 0L Preliminary Package Outline The C X K 5 8 6 5 P / M is a 6 5 ,5 3 6 bits high speed C M O S static R A M organized as 8 ,19 2 w ord s by 8 bits and operates from a sin gle 5 V supply. The

TLO32

Abstract: 948AL N64S818HAS21I N64S818HAT21I
Contextual Info: N64S818HA 64 Kb Low Power Serial SRAMs 8 K x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 K serially accessed Static Random Access Memory, internally organized as 8 K words by 8 bits.

Contextual Info: N64S830HA 64 kb Low Power Serial SRAMs 8 k x 8 Bit Organization Introduction The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 k serially accessed Static Random Access Memory, internally organized as 8 k words by 8 bits.