128X512 Search Results

Contextual Info: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit

Contextual Info: CAT24FC65, CAT24FC66 64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection FEATURES • Fast mode I2C bus compatible* ■ 5 ms max write cycle time ■ Max clock frequency: ■ Write protect feature - 400KHz for VCC=2.5V to 5.5V ■ Schmitt trigger filtered inputs for

1SBL

Abstract: AKM6287LP55
Contextual Info: A K M 6287 Series 65536-word x 1-bit High Speed CMOS Static RAM • FEATURES • High Speed: Fast Access Time 45/55/70ns max. • • Single 5V Supply and High Density 22 Pin Package Low Power Standby and Low Power Operation • Standby: 100/LtW (typ.)/10/LtW (typ.) (L-version)

U7777

Abstract: D41416
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias

D41416

Abstract: PD41416 PD41416-15 HPD41416-12 PD41416-12
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias

LH5268AD-10LL

Abstract: LH5268A
Contextual Info: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

24FC64

Abstract: CAT24FC64
Contextual Info: H EE GEN FR ALO CAT24FC64 64K-Bit I2C Serial CMOS EEPROM LE FEATURES A D F R E ETM • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=1.8V to 5.5V - 1MHz for VCC=2.5V to 5.5V

3502M

Abstract: 3tb52 M188A m184a
Contextual Info: FJUL63182A-02 ＭＳＭ６３１８２Ａ／１８４Ａ／１８８Ａ ユーザーズマニュアル 第 2 版 2001 年 12 月 10 日 4 FJUL63182A-02 ご 注 意 １． 本書に記載された内容は製品改善および技術改良等により将来予告なしに変更することがありま

Contextual Info: HM6289 Series 16384-Word x 4-Bit High Speed CMOS Static RAM with OE Th e Hitachi H M 6 2 8 9 is a high speed 64k static R A M organized Pin Arrangement as 16-kword x 4-bit. It realizes high speed access tim e (2 5 /3 5 /4 5 ns) and low power consumption, employing C M O S process techno logy.

6287HLJP-25

Abstract: 6287HP
Contextual Info: HM6287H Series 65536-Word x 1-Blt High Speed CMOS Static RAM The Hitachi HM6287H is a high speed 64K static RAM organized as 64-kword x 1-bit. It realizes high speed access time 25/35 ns and HM 6287HP Series low power consumption, employing CMOS process technology and

48C1024

Contextual Info: M 4 8 C 5 1 2 / 4 8 C 1 0 2 4 5 1 2 K / 1 0 2 4 K F L A S H " E E P R O M ADVANCE DATA SH EET duty 1987 Features • 64K/128K Byte Writable non-volatile memory ■ Low Power CMOS Process ■ Electrical Chip and Block Erase • 7.5 Second Maximum Erase Time

HY6264A

Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
Contextual Info: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

MLP8 2x3mm

Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Contextual Info: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

SRM2261

Abstract: SRM2261C55 SRM2261C70 AL221 2551 vn 001542
Contextual Info: OB PF211-52 kT W ^ S Si A M. A i SYSTEMS HIGH SPEED 64K BIT CMOS STATIC RAM SRM2261C55 ' SRM2261C7o SRM2261 r ; 'S - ; 7v I DESCRIPTION T h e S R M 2 2 6 IC 55/70 is a 6 5 ,5 3 6 words * 1 bit asynchronous, static, random a c cess memory or a monolithic C M O S chip. Its very low standby power requirem ent m akes it ideal for applications requiring non-volatile

Contextual Info: HM6787 Series Maintenance Only Refer to HM6787HA Series 66536-word x 1-bit High Speed Hi-BiCMOS Static RAM • FEATURES HM 6787P Series • • Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) • • • High Driving Capability: lo c 16mA

Contextual Info: H EE GEN FR ALO CAT24FC64 64K-Bit I2C Serial CMOS EEPROM LE FEATURES A D F R E ETM • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=1.8V to 5.5V - 1MHz for VCC=2.5V to 5.5V

t3d6

Abstract: E10HZ t3d4 LCD 16*1 T3D7 T3D5 m193 FJUL63193-02 T13CK DL T2d6
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

T2d6

Abstract: T2D7 ML63611A SASM63K FJUL63611A-01 XXHX ML63611 code l43
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

HM6287HLP-35

Abstract: HM6287-70 HM6287 HM6287LP-45 HM6287LP-55 A6C5 HM6287H HM6287HP-25 HM6287HP-35 HM6287HLJP-25
Contextual Info: HM6287, HM6287H Series 65536-word x 1-bit High Speed CMOS Static RAM The Hitachi HM6287H is a high speed 64 k static RAM organized as 64-kword x 1-bit. It realizes high speed access time 25/35 ns and low power co n su m p tio n , em p lo y in g CM OS p ro cess

LCD 1620

Abstract: 3tb52 lcd 1621
Contextual Info: PJUL63611-03 CMOS 4 ビット マイクロコントローラ ＭＬ６３６１１ ユーザーズマニュアル 暫定 第 3 版 2001 年 7 月 23 日 4 PJUL63611-03 ご 注 意

3tb52

Abstract: 64Hz-1 t3d7 LCD96 t2d7 2754 mov
Contextual Info: FJUL63295A-02 CMOS 4 ビット マイクロコントローラ ＭＬ６３２９５Ａ ユーザーズマニュアル 第2版 4 2001 年 7 月 23 日 FJUL63295A-02 ご 注 意 １． 本書に記載された内容は製品改善および技術改良等により将来予告なしに変更することがありま

6789JP-30

Abstract: 57AH
Contextual Info: Maintenance Only HM6789 Series 16384-word x 4-bit High Speed Hi-BiCMOS Static RAM with OE Features • H M 6789P Series S u p e r F a s t A c c e s s T i m e : . 2 5 / 3 0 ns (m a x) • L o w R o w e r D is s ip a t io n ( D C ) O p e r a t in g . .

Contextual Info: H M 6 7 8 7 S e rle s Maintenance Only 65536-word x 1-bit High Speed Hi-BiCMOS Static RAM HM6787P Series FEATURES Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) High Driving Capability: l0 L.16nnA +5V Single Supply

24FC64

Abstract: AEC-Q100 CAT24FC64 K0803
Contextual Info: CAT24FC64 64K-Bit I2C Serial CMOS EEPROM FEATURES • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=2.5V to 5.5V t r ■ Write protect feature ■ Schmitt trigger filtered inputs for noise suppression