7Z78131 Search Results

BD235 PHILIPS

Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its

BDT61

Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.

T3D DIODE

Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
Contextual Info: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are

transistor 1BT

Abstract: BDT62C PHILIPS npn 1bt BDT63B
Contextual Info: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

bdt65b

Contextual Info: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SbE D • 7 1 I G Ö 5 L □ □ 4 3 2 ‘ia Ibfl « P H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. T 0-2 2 0 plastic envelope. PNP complements are

Contextual Info: BDV91 BDV93 BDV95 _y v SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.

BD237

Abstract: Audio amplifier circuits bd238 BD233 BD234 BD235 BD236
Contextual Info: BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs

TS-7P

Abstract: T-33-Z bdv65
Contextual Info: BDV65; 65A BDV65B; 65C SbE D PHILIPS INTERNATIONAL • 7110fl2b 0D433b0 3D1 H P H I N T'33-Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. PNP complements are BDV64, 64B and 64C.

MM1185

Abstract: BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 T-33-Z dv65 BDV64 LP 7510 7Z82768
Contextual Info: BDV65; 65A BDV65B; 65C PHILIPS INTERNATIONAL SbE D • 711DÛ2b 0D433L0 301 « P H I N T - 3 3 - Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 64, 64B and 64C.

bdx67

Abstract: transistor bdx67
Contextual Info: N AMER PHILIPS/DISCRETE E5E bL.53‘ 3> 1 Q O nW 7 • BDX67; 67A BDX67B; 67C T -3 3 -3 .7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,

bd239a ti

Contextual Info: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.

BDT63

Abstract: BDT62
Contextual Info: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,

BDT61

Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
Contextual Info: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A

b0951

Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
Contextual Info: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.

BD679

Abstract: BD675 BD680 T-988 BD676 BD678 BD682 BD684 D0344
Contextual Info: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA

Contextual Info: TIP29; 29A TIP29B; 29C _ J K. SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.

FT501

Contextual Info: BD949; 951 BD953; 955 5bE D PHILIPS INTERNATIONAL • 711002b □ 0 4 3 0 t]fl b^7 H P H I N T-J3-H SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0-22 0 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended for use in a wide range of power amplifiers and for switching applications.

BD233

Abstract: FT501
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs

BDT93

Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
Contextual Info: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.

BDT31

Abstract: BDT31B BDT32 TIP31 T98-1
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 O G n b ö l - I I S ■ BDT31; A BDT31B; C r - 3 3 - ii SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and genera! am plifier and switching applications. The TIP31 series is an equivalent type, P-N-P complements are BDT32 series.

BDX95

Abstract: BDX93 BDX94 BDX91 BDX96 BDX92 TO3 philips bdx96 philips
Contextual Info: . m b b S B ' m 0050051 ì • N AMER PHILIPS/DISCRETE BDX91 BDX93 BDX95 5SE D T - 23-/3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in T O -3 envelope for audio output stages and general-amplifier and switching applications. P-N-P complements are B D X 92 , B D X 94 and B D X 96 .

TIP29

Abstract: TIP29B TIP30
Contextual Info: TIP29; 29A TIP29B; 29C I^ SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.

BD934

Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
Contextual Info: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.

BDT29

Abstract: BDT29B BDT30 IEC134 TIP29 BDT21
Contextual Info: 11 N AMER PHILIPS/DISCRETE SSE D • ¡3^53^31 G G I U S B & M BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.