7C1002 Search Results

ZL78

Abstract: 7C1001
Contextual Info: CY7C1001 7C1002 PRELIMINARY 256Kx 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C1001 and 7C1002 are highperformance CMOS static RAMs orga­ nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by ac­

Contextual Info: PRELIMINARY f CYPRESS 256K x 4 Static RAM with Separate I/O Features Functional Description • High speed t h e CY7C1001 and 7C1002 are highperform ajice C M O S static RA M s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m em ory expansion is provided by ac­

7C1001-12

Abstract: CY7C1001 CY7C1002 as262
Contextual Info: s= p v n D r c c ~ Yi ilL jO o CY7C1001 7C1002 PRELIMINARY 256K x 4 Static RAM with Separate I/O Features Functional Description • t h e C Y 7C 1001 a n d C Y 7C 1002 a re highp e rfo rm a n c e C M O S static R A M s o rg a ­ n iz ed as 262,144 x 4 b its w ith s e p a ra te I/O .

V32 Package

Abstract: CY7C1001 CY7C1002 7C10011
Contextual Info: PRELIMINARY ’# CYPRESS • H igh speed — tAA = 12 ns • T ransparent w rite 7C1001 • C M O S for optim um speed/pow er • Low active power — 910 rnW • Low standby power — 275 mW • 2.0V data retention (optional) — lOfl |iW • 256K x 4 Static RAM

Contextual Info: 7c1001:1 1 -2 5 -9 1 Revision: Tuesday, December 22,1992 if 83 •». CY7C1001 PRELIMINARY 7C1002 - - -— 256K x 4 Static RAM with Separate I/O CYPRESS SEMICONDUCTOR Features Functional Description • Highspeed The CY7C1001 and 7C1002 arc highperformance CMOS static RAMs orga­

Contextual Info: CY7C1001 7C1002 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed T h e CY7C1001 and 7C1002 are highp erfo rm an ce C M O S static R A M s orga­ nized as 262,144 x 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac­

Contextual Info: bSE D • 250=^5 QDlQQbQ CY7C1001 7C1002 PRELIMINARY CYPRESS SEMICONDUCTOR 256Kx 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C1001 and 7C1002 are highperform ance CMOS static RAMs orga­ nized as 262,144 x 4 bits with separate I/O.

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

CY7C1001

Abstract: CY7C1002
Contextual Info: 4bE » • asaikba aaat,?a3 a i CYP CY7C1001 7C1002 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM with Separate I/O Features Functional Description • H ig h sp ee d — U a = 15 n s T h e CY7C1001 an d C Y 7C 1002 a re highp erfo rm an ce C M O S static R A M s o rg a ­

Contextual Info: PRELIMINARY 'f CYPRESS 256K x 4 Static RAM with Separate I/O F e a tu re s F u n c tio n a l D escrip tio n • High speed The CY7C1001 and 7C1002 are highperform ance CM OS static RAM s orga­ nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by ac­

Contextual Info: CY7C1001 7C1002 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed T h e CY7C1001 and 7C1002 are highp erform ance C M O S static R A M s orga­ nized as 262,144 x 4 bits w ith separate I/O. Easy m em ory expansion is provided by ac­

C1001-1

Abstract: C1001-6 C10019 C1001
Contextual Info: CY7C1001 PRELIMINARY Functional Description Features D D D D D D D The CY7C1001 and 7C1002 are highĆ performance CMOS static RAMs orgaĆ nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by acĆ tive LOW chip enable CE and threeĆ