77ADD Search Results

J 350 FET

Abstract: 1w, GaAs FET
Contextual Info: - 281 f e t - jf t À m « § m EM • M G F 2 I48 T O : SHF « « f i i f tBfflo « ë : N f t W h* Y- 3 F GaAs FET. tm m«# » M Jjniëiï êi'o : s a t t <pm=i. •M G - êm EM F 2 1 7 2 — I' Pmb=2. 5». g * P o ¡m • MG F 2 4 0 7 =B : SHF f f i j f i : N * * * ;!/ - > a .y S + ' r - h

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! M G FC40V3742 3 .7 — 4 .2 G H z BAND 10W IN TE R N A L L Y M A TCH ED GaAs F E T ¡ DESCRIPTION The M G FC40V3742 is an internally impedance-matched GaAs power FET especially designed fo r use in 3.7 ~ 4.2 GHz band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 44V 5964 5 . 9 —6 .4 G H z BAND 2 4 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE D R A W IN G The M G F C 4 4 V 5 9 6 4 is an internally impedance-matched Unit: millimeters inches GaAs power F E T especailly designed for use in 5.9 ~ 6.4

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION T he M G F 2 4 1 5 A , power GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power • High power gain

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A So«1' Q 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 5 9 6 4 A is an internally im pedance-matched GaAs power F E T especially designed for use in 5 .9 —6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic

rtm880t-792

Abstract: UP7704U8 RTM880T-792-LF K4N1G164QQ-HC25 L78012 PT8704 D7201 mb39a132 IT8752E RTM880T
Contextual Info: 5 4 3 2 1 N50Tr SCHEMATIC R110 D D Content PAGE PAGE Content SYSTEM PAGE REF. C B A 3 4 5 6 7 8 9 10 11 12 13 14 15 20 21 22 23 24 25 29 30 31 32 33 34 35 36 37 38 40 41 42 43 44 45 46 48 50 51 52 53 56 57 58 60 61 62 63 65 66 69 70 71 72 73 74 75 76 77 SCHEMATIC INFORMATION

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET P DESCRIPTION The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785B •b e U 7 .7 —8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an internally im p e d a n c e-m a tc h e d GaAs pow er F E T especially designed fo r use in 7 . 7 — 8 . 5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 3742A P R E U r i Ä ‘" ocM,'9S' so^p' m 3 . 7 — 4 .2 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 3 7 4 2 A is an in te rn a lly im p e d a n c e -m a t c h e d G aA s p o w e r F E T especially designed fo r use in 3 .7 ~ 4 .2

MGFC40V3742A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 3742A 3 .7 — 4.2G H z BAND 10W INTERNALLY M ATCHED GaAs F E T DESCRIPTION T h e M G F C 4 0 V 3 7 4 2 A is an internally im p e d a n c e -m a tc h e d GaAs pow er F E T especially designed fo r use in 3.7 ~ 4 .2

S65A

Abstract: MGFL45V1920
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OLTTUNE The M G F L45V 1920 is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 2 4 + /-0 .3 G H z band amplifiers.The hermetically sealed metal-ceramic

GFK37V404S

Abstract: K37V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK37V404S 1 4 . 0 - 14.5G H z BAND 5 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz-band amplifiers. The hermetically sealed metal-ceramic

F10B

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET D E SC R IPT IO N The M G F K 3 8 V 2 2 2 8 is an inte rn a lly impedance matched GaAs power F E T especially designed fo r use in 12 .2 ~ 1 2 .8 G H z band am plifiers. The herm etically sealed m etal-ceram ic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A , eh«*» ¡ptev^ 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 5«n>e p3r3' DESCRIPTION The M G FC 36V7785A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.7 ~ 8.5G H z