MGFL45V1920 Search Results

Contextual Info: < L/S band internally matched power GaAs FET > MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFL45V1920A

Contextual Info: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> N otice: This is n o t a final specification. Some param etric lim its are subject to change. • m |y | ^ h | ■ m _ m mj a L 4 ¡ V I ^ ^ • 1.9-2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFL45V1920A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFL45V1920A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic

S65A

Abstract: MGFL45V1920
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OLTTUNE The M G F L45V 1920 is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 2 4 + /-0 .3 G H z band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> « s is i.Ä= : MGFL45V1920 1.9-2.0GHZ BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION O U T L IN E D R A W IN G The M G FL45V1920 is an internally impedance matched G aAs power FET especially designed for use in 1.9 - 2.0

MGFL45V1920

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFL45V1920 is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 24 +/- 0.3 GHz band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: < L/S band internally matched power GaAs FET > MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

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Contextual Info: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees