20OHM Search Results

Contextual Info: FPR 2-T218E Powertron FEATURES • Resistances from 20Ohms to 50Ohms • Power Rating to 15Watt • Resistance Tolerances to ±0.5% • TCR to ±50ppm/K • Load Stability to 0.1% • TO-218 TO-247 Housing TABLE 1—SPECIFICATIONS TYPE FPR 2-T218E Resistance Range

Contextual Info: FPR 2-T218 Powertron FEATURES • Resistances from 0.002Ohm to 20Ohms • Power Rating to 30Watt • Resistance Tolerances to ±0.25% • TCR to ±50ppm/K • Load Stability to 0.1% • TO-218 TO-247 Housing TABLE 1—SPECIFICATIONS TYPE FPR 2-T218 Resistance Range

Contextual Info: SPR SNR 4-T227 Powertron FEATURES • Resistances from 0.002Ohm to 20Ohms • Power Rating to 80Watt • Resistance Tolerances to ±0.1% • TCR to ±2ppm/K • Load Stability to 0.1% TABLE 1—SPECIFICATIONS TYPE SPR 4-T227 Resistance Range SNR 4-T227

Contextual Info: CMOS/DMOS Wideband Dual SPDT Analog Switch CORPORATION CWB2269 FEATURES • High OFF Isolation • Low Channel-to-Channel Crosstalk Bandwidth • Wide • Broad Analog Signal Range . . . . . . . . . . . +10V to -10V • Low ON Resistance . . . . . . . . . . . . . . . . . 20ohms typical

Contextual Info: SHR 4-2321 Powertron FEATURES • Resistances from 0.005Ohm to 20Ohms • Power Rating to 40Watt • Resistance Tolerances to ±0.1% • TCR to ±2ppm/K • Very Low Inductance • Load Stability to 0.1% TABLE 1—SPECIFICATIONS TYPE SHR 4-2321 Resistance Range

Contextual Info: FPR 2-T218 Powertron FEATURES • Resistances from 0.002Ohm to 20Ohms • Power Rating to 30Watt • Resistance Tolerances to ±0.25% • TCR to ±50ppm/K • Load Stability to 0.1% • TO-218 TO-247 Housing TABLE 1—SPECIFICATIONS TYPE FPR 2-T218 Resistance Range

sn74ls362

Abstract: internal circuit of ic 7486 IC TTL 7486 tim9904 7486 ic diagram 7464 ic TMS9900 LS362 TTL 7464 TMS99
Contextual Info: TTL MSI TYPE SN74LS362 TIM 9904 FOUR-PHASE CLOCK GENERATOR/DRIVER B U L L E T I N NO . D L-S 7 71 24 76 , O C T O B E R 1 9 7 6 - R E V 1 S E D A U G U S T 1977 SN74LS362 . . . J OR N PACKAGE (TOP V IE W Clock Generator/Driver for The TMS 9 9 0 0 or Other Microprocessors

MC2512WF1000T4E

Abstract: 20ohm JIS C 5201-1
Contextual Info: m c mult comp RoHS Compliant Percent rated load % Tape & Reel Dimension Ambient Temperature (°C) Performance specification Characteristics Temperature coefficient Limits 10O-1M O O ± 100 PPM/°C Test Methods (JIS - C - 5201-1) 5.2 Natural resistance change per temp. degree centigrade

Contextual Info: 16RIA Series Vishay High Power Products Medium Power Thyristors Stud Version , 16 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package

ISL62882HRTZ

Abstract: auburndale thermistor ntc 60 0250 ISL62882 ISL62882B ISL62882BHRTZ ISL62882BHRTZ-T ISL62882HRTZ-T ISL62882IRTZ ISL62882IRTZ-T
Contextual Info: ISL62882, ISL62882B Data Sheet April 1, 2009 Multiphase PWM Regulator for IMVP-6.5 Mobile CPUs The ISL62882 is a multiphase PWM buck regulator for miroprocessor core power supply. The multiphase buck converter uses interleaved phase to reduce the total output

246AH

Abstract: aker crystal Nihon Dempa Kogyo
Contextual Info: T- 7 Ï- 0 7 Ordering number: EN3B89A 0 G1 QSÖS 2 Gö « T S A J SANYO SEMICONDUCTOR CORP S3 E D LC7152, LC7152M No. 3889A SA\YO i C M O S LSI Universal Dual-PLL Frequency Synthesizers OVERVIEW The LC7152 and LC7152M are universal dual-PLL frequency synthesizers for use in cordless telephone

transistor d 1825 7c

Abstract: BU406
Contextual Info: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output

PV36 5k potentiometer

Abstract: PV36W201C01 PV12T102A01 volume potentiometer 1k ohm
Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

22RIA

Abstract: 22RIA120 22RIA160S90 22RIA80
Contextual Info: 2002-07-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 72-074-26 22RIA80 tyrist 800 V 22A 72-074-42 22RIA120 tyrist 1200V 22A Bulletin I2403 rev. A 07/00 22RIA SERIES

7SDMM-B0-2211-A

Abstract: 980020-48-P2 mt29f2g08aadwp connector 7sdmm-b0-2211 MT29F8G08AAAWP MT29F8G08A MT29F2G08AAD BSS138 NXP 7SDMM 7SDMM-B0-2211
Contextual Info: SCH-VAL314x-01 00 NXP Semiconductors LPC314x Validation Board Schematics 1 05 Review cleanup and Layout quotation 07/20/08 01 REFDES re-ordered; Release for Assembly 08/14/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1

980020-48-P2

Abstract: 7SDMM-B0-2211-A MT29F8G08AAAWP mt29f2g08aadwp MT29F8G08A 7SDMM-B0-2211 MT29F2G08AAD 7SDMM MT29F4G08ABCWC MT29F4G08ABCWC-et
Contextual Info: SCH-VAL313x-01 01 NXP Semiconductors LPC313x Validation Board Schematics 1 05 Initial release 09/29/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1 & GPIO2 to 4.7k; sht 7 01/22/09 04 Tie LPC313x pin K11 to SUP3;

m64084

Abstract: m64084a M64084AGP KSS tcxo 12.8MHz Cordless telephone system block diagram M64884 DUAL XTAL OSCILLATOR IC TCXO KSS MITSUBISHI LOT NO. CODE mitsubishi Lot No. Year code
Contextual Info: MITSUBISHI ICs Cordless Telephone M64884FP Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer 1.DESCRIPTION The M64884FP is a 2-sy stem 1-chip PLL f requency s y nthesizer IC designed of Analog cordless telephone f or North

PI49FCT

Abstract: PI49FCT3805 PI49FCT3806
Contextual Info: PI49FCT3805 PI49FCT3806

gic 1990

Abstract: TQ5M31
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ5M31 DATA SHEET Vdd Vdd IF Gain/IP3/current adjustment GIC GND LO RF 50 ohm LO INPUT 3V Downconverter Mixer IC IF OUT GND 50 ohm RF INPUT Features §Single 3V Operation §Adjustable Gain/IP3/Current §Low Current Operation

R36W

Abstract: lnk303 samsung ltn LD3130 CRC10 MXT3010 R44-R47 M 8012 R54-R55 t9354
Contextual Info: MXT3010 Reference Manual Version 4.1 Order Number: 100108-05 October 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the

RUTTONSHA all diodes

Abstract: RUTTONSHA 16 F M 120 VGT350
Contextual Info: Ruttonsha International Rectifier Ltd. POWER MODULES RUTTONSHA IRK.170, .230, .250 SERIES High Voltage Thyristor/Diode and Thyristor/Thyristor FEATURES L L L L L L L Electrically isolated base plate. 3000 V RMS isolating voltage. Industrial standard package.

CM32

Abstract: MGFL48V1920 GR-70
Contextual Info: Preliminary MITSUBISHI SEMICONDUCTOR «^QaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

Contextual Info: Bulletin I2402 rev. C 05/06 25RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities 25A Standard package Low thermal resistance

Contextual Info: VSK.170PbF, VSK.250PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package