FC36V6472A Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET P DESCRIPTION The FC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FC36V6472A c " 6 .4 ~ 7 .2 G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The FC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band am plifiers . The hermetically

GSO 69

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION 21.0 ±0.3(0.827 ±0.012) GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed Unit : millimeters (inches)