75081 Search Results

Contextual Info: CUSTOMER TERMINAL RoHS LEAD Pb —FREE S n96% , Ag4% Yes Yes r-|y~ more than you e xpect IVidcom =tb_ 7508112510 WURTH ELEKTRONIK ELECTRICAL SPECIFICATIONS 25°C unless otherwise noted: PAR AM ETER DOT LOCATES TERM. #1 TEST 1 -3 C O N D IT IO N S VALUE

transistor A05

Abstract: 2N6388 npn darlington 2N6386 2N6387 2N6666 2N6667 2N6668 Complementary Darlington Audio Power Amplifier 079V
Contextual Info: ÏÏÏ 38 75081 dF | 3 fl? S D Û l Q Q l7E 4fl 7 G E S OL ID S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington

Contextual Info: CUSTOMER TERMINAL RoHS LEAD Pb —FREE S n96% , Ag4% Yes Yes _cih= more than you e xpect IVidcom =0=k 750811643 WURTH ELEKTRONIK ELECTRICAL SPECIFICATIONS 25°C unless otherwise noted: =n^ PAR AM ETER DOT LOCATES TERM. #1 TEST 1 -3 C O N D IT IO N S VALUE

Contextual Info: CUSTOMER TERMINAL RoHS LEAD Pb —FREE S n96% , Ag4% Yes Yes _cih= more than you e xpect IVidcom =0=k 750811914 WURTH ELEKTRONIK ELECTRICAL SPECIFICATIONS 25°C unless otherwise noted: =n^ PAR AM ETER LOT CODE & D.C. RESISTANCE DATE CODE D.C. RESISTANCE

WE-MIDCOM

Contextual Info: 750815047 PRI 185-265VDC 70kHz SEC 30VDC, 280mADC AUX 15VDC, 20mADC ELECTRICAL SPECIFICATIONS @ 25°C unless otherwise noted: D.C. RESISTANCE @20°C : 3-1 , 7.37 Ohms ±10%. 5-4 , 0.605 Ohms ±10%. 6-7 , 0.625 Ohms ±10%. DIELECTRIC RATING: 3000VAC, 1 minute tested by applying 3750VAC for 1 second between pins 3-7 (tie 1+5).

SP0256

Abstract: Quadravox QV306m1 chipcorder QV356 QV306M4 pic tutorial Phoneme Speech synthesizer
Contextual Info: Quadravox Text-to-Speech Synthesis Quadravox, Inc. 1701 N. Greenville Ave, Suite #608 Richardson Tx 75081 Ph: 972 669 4002 Fax: (972) 437 6382 (www.quadravox.com) Introduction The Quadravox Text-to-Speech synthesis system aims at replacing the hard to find GI

NX DIODE SM

Abstract: 2N6164 2N6764 q2N6764 MOSF6
Contextual Info: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E

WE-MIDCOM

Abstract: WE MIDCOM IEC61558-2-17 WE-MIDCOM transformer IEC61558
Contextual Info: 750811042 4 PRI 120-375V 100kHz FL1 1 SEC 24V - 360mA 3 FL2 AUX 2 ELECTRICAL SPECIFICATIONS @ 25°C unless otherwise noted: D.C. RESISTANCE @20°C : 1-4 , 1.60 Ohms ±10%. 2-3 , 0.195 Ohms ±10%. 7-8 , 0.097 Ohms ±10%. DIELECTRIC RATING: 4500VAC, 1 minute tested by applying 4500VAC for 1 second between pins 1-8(tie 1+2).

HIGH FREQUENCY Transformer ee16

Abstract: EE16 flyback transformer flyback transformer EE16 flyback IEC61558-2-17 asymmetric flyback EE-16 flyback transformer high voltage Quasi-resonant flyback transformer
Contextual Info: more than you expect Infineon ICL8001G-Bulb02 750311798 Quasi-Resonant Flyback Converter • LED retrofit of 40/60/100W incandescent bulbs • Input voltage: 90-265VRMS • 26V at 350mA output • Quasi-resonant flyback converter • Phase-cut dimming 750815141

ta7353

Abstract: 3N152 VAM-010 200 pF air variable capacitor 92CS-W092 e f johnson
Contextual Info: E SOLID S T A T E 0 1 DE |3fl7S0öl 0014TT4 S Small-Signal M O S F E T s - 3N152 38 75081 _ G E S O LID S T A T È Ö1E Silicon M O S Transistor

BDX33D equivalent

Abstract: BOX33B RCA-BDX33 BDX33c equivalent
Contextual Info: oï G E SOLID STATE 38 75081 G E SOLID-STATE Darlington Power Translators 0 1E ~ d^3ö7S0öi □□vpsflü 3 17280 Ö’ T - 3 3 - 2 L 7 BDX33, BDX33A, BDX33B, BDX33C, BDX33D File Number 693/ r 10-Ampere N-P-N Darlington Power Transistors « TERMINAL DESIGNATIONS

PKC 2131 PI

Abstract: eripower diode oa71 PKC 2121 PI PKC 4131 PI Pi Tubular ceramic capacitor PKC 2132 PI 2131 P diode smd 4126 PKC 2111 PI
Contextual Info: ERI CSSON COMPONENTS AB E R IfC C O N [fp I C | i IV m v 9 w IM MME D • 337331M DÜGSSSÖ b3G M E R I C a lm \ w ER,CSS0N COMPONENTS, INC. 403 International Parkway Suite 500 RICHARDSON, TX 75081 (214 669-9900 FAX (214) 680-1059 r -y " -7 _ j j ErlPower

GES2904

Abstract: GES2904A GES2905 GES2905A
Contextual Info: G E SOLID STATE 38 75081 Dl G E SOLID STATE i>F|~3fl75Gfll □□17Tb? 01E 17967 D • - Signal Transistors GES2904,04A, GES2905, 05A Silicon Transistors

4342414

Abstract: 75081 plasma display SN65508 SN75508
Contextual Info: 8961724 TEXAS INSTR C LIN /IN TFC 9 1 D 75081 ADVANCE INFORM ATION D SN65508, SN75S0S AC PLASMA DISPLAY DRIVERS D2924, DECEMBER 1 9 8 5 -R E V ISE D OCTOBER 1986 Controls 32 Electrodes FN PAC KA G E Rugged D M O S Outputs tD O CMOS-Compatible Inputs S é tu

Contextual Info: CUSTOMER TERMINAL RoHS LEAD Pb —FREE S n96% , Ag4% Yes Yes _cih= more than you expect IVidcom =0=k 7508116312 WURTH ELEKTRONIK ELECTRICAL SPECIFICATIONS 25°C unless otherwise noted: =n^ PARAM ETER DOT LOCATES TERM. #1 TEST 1 -3 C O N D IT IO N S VALUE

Contextual Info: CPS SCA Series Grid-tied PV Inverter CPS SCA3/4/5/KTL-O/US Installation and Operation Manual Ver 1.0 CHINT POWER SYSTEMS AMERICA CO., LTD. Address: 700 International Parkway Suite 102 Richardson TX 75081 Web: www.chintpower.com/na Email: americasales@chintpower.com

IEC61558-2-17

Abstract: WE-MIDCOM
Contextual Info: 750811048 3 PRI 120-375V 300kHz 8 2 SEC 30V - 300mA 7 1 4 AUX 15V 5 ELECTRICAL SPECIFICATIONS @ 25°C unless otherwise noted: D.C. RESISTANCE @20°C : 1-3 , 2.90 Ohms ±10%. 4-5 , 1.22 Ohms ±10%. 7-8 , 0.210 Ohms ±10%. DIELECTRIC RATING: 4500VAC, 1 minute tested by applying 4500VAC for 1 second between pins 3-8(tie 1+4).

plasma display

Abstract: SN65508 SN75508
Contextual Info: TE X A S IN ST R - C L I N / I N T F O *13. 8961724 TEXAS IN ST R Ï F| fiT b 17 E M D G 7 S G A 1 7 ~ f ~ L IN /I NT FC ) 9 1 D 75081 ADVANCE INFORMATION D SN65508, SN75S0S AC PLASMA DISPLAY DRIVERS D2924, DECEMBER 1985—REVISED OCTOBER 1986 Controls 3 2 Electrodes

TA7317

Abstract: ta7316 ta7313 ta7318 TA7311 TA7314 2N5494 RCA 2N5494 2N5490-2N5497 2N5492
Contextual Info: Ql 3 8 75081 G E SOLID STATE General-Purpose Power Transistors DE~| 3fl7S0fll 0017300 1 01E 17388 D T ' ]? 3 “ // » 2N5490-2N5497 File Number 353 T E R M IN A L D E SIG N A TIO N S Silicon N-P-N

PARAGON

Contextual Info: Systems in Silicon Contact Information: Paragon Innovations, Inc. 972-680-2900 671 N. Plano Road, Suite 203 Richardson, Texas 75081 FAX: E-mail: URL: 972-680-0300 sales@paragon-tx.com www.paragon-tx.com AMD Embedded Products Division, FusionE86 Support

Contextual Info: CUSTOMER TERMINAL RoHS LEAD Pb —FREE S n96% , Ag4% Yes Yes r-|y~ more than you expect IVidcom =tb_ 7508112327 WURTH ELEKTRONIK ELECTRICAL SPECIFICATIONS 25°C unless otherwise noted: PARAM ETER DOT LOCATES TERM. #1 TEST 1 -3 C O N D IT IO N S VALUE @20“C

MC68HC908GP32

Abstract: 8GP3 CPU08 HC08 MON08 MC68HC908GP32 microcontroller 68HC908GP32 HC08 c code example HC08 c code example spi
Contextual Info: CMS-8GP32 A Motorola MC68HC908GP32 Microcontroller Board xiom anufacturing   2000 717 Lingco Dr., Suite 209 Richardson, TX 75081 • 972 994-9676 FAX (972) 994-9170 email: Gary@axman.com • web: http://www.axman.com CONTENTS FEATURES. 3

WE-MIDCOM

Abstract: IEC61558-2-17 WE MIDCOM APS 5-3 LS TRANSFORMER IEC61558 WE-MIDCOM transformer
Contextual Info: 750813141 3 PRI 120-200V 100kHz 4 6 SEC 27V - 350mA 5 8 1 AUX 19V - 20mA 2 ELECTRICAL SPECIFICATIONS @ 25°C unless otherwise noted: D.C. RESISTANCE @20°C : 1-2 , 0.343 Ohms ±10%. 3-5 , 5.05 Ohms ±10%. 6-8 , 0.079 Ohms ±20%. DIELECTRIC RATING: 4500VAC, 1 minute tested by applying 4500VAC for 1 second between pins 1-8(tie2+4).

8YW51-150

Abstract: 8YW51 RUR820 RUR-810 BYW51-100 d810 BYW51 BYW51-150 BYW51-200 RUR-D815
Contextual Info: 38 75081 m T | 3ñ750fll 0017b43 5 öl E SOLID STATE G E S O L I D S TA TE 01E Ultra-Fast-Recovery Rectifiers- 17643 BYW51-100, BYW51-150, BYW51-200 File Num ber 1412 Dual 8-A, High-Speed, High Efficiency Epitaxial Silicon Rectifiers