741 HFE Search Results

2SC1741A

Abstract: SMW300 TP2500
Contextual Info: S -? > v 7. $ /Transistors 2SC1741A/2SC1741 AS 2SC1 741 A a Z S v l 741 AS wmjm * NPN y U = l> V ÿ / v W Epitaxial Planar NPN Silicon Transistors /Medium Power Amp. t t t t V T i W m s - T t e • ft* 1 V c e o = 50V, lc = 5 0 0 m A t « S E , 2) VcE sat)*'” 0 .1 V Typ. (at lc = 150m A ,

Contextual Info: • 0025^82 741 ■ APX N AMER PHILIPS/DISCRETE PXT4403 L7E » yv SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for linear switching applications. The complementary type is PXT4401.

Contextual Info: SANKEN ELECTRIC CO L T D SSE 7TÏD 741 D QQ O ' l ?' 420 Silicon NPN Epitaxial Planar T ^ 3 ☆Switching Transistor 2SC4130 Application Example : «SAKJ S - lí •FM20 • Outline Drawing 4 - ■ Switching Requlator and General Purpose_ Electrical Characteristics

IMBT3904

Abstract: ITT INTERMETALL
Contextual Info: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.

Contextual Info: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H OPERATIONAL AMPLIFIER 741 _ j- PAKAGE TO-99 8 LEADS _ T p l / —• ? / _ Absolute Maximum Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T - *

darlington pair transistor

Abstract: mml 600 33T4 operational amplifier-741
Contextual Info: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H OPERATIONAL AMPLIFIER 741 _ j- PAKAGE T O -9 9 8 LEADS _ T p l / —• ? / _ Absolute Maxim um Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T

darlington pair transistor

Abstract: Voltage Regulator 723 operational amplifier-741 IC cd 7400 operational amplifier 741 IC 723 voltage regulator CIL TRANSISTOR voltage regulator IC 723 7400 TRANSISTOR TO-105
Contextual Info: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H _ j- OPERATIONAL AMPLIFIER 741 J5SI-//-73 PAKAGE TO-99 8 LEADS _ T p l / —• ? / _ Absolute Maximum Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T - *

darlington pair transistor

Abstract: Voltage Regulator 723 IC cd 7400 178MIN 33T4 TQ-106 sis 741 U1514 Joy Signal
Contextual Info: SPECIAL DEVICES CONTINENTAL DEVICE INDIA 3EE D • 53633=14 0000027 H OPERATIONAL AMPLIFIER 741 _ j- J 5 S I-//-7 3 PAKAGE TO-99 8 LEADS _ T p l / —• ? / _ Absolute Maximum Rating Stg. Temp-65°C; to 150°C Operating temp. UUC to 70°C I T - *

Contextual Info: SSE D • 7^ D 741 DGDlllti ìfi? « S A K J STA403A Silicon NPN Triple Diffused Planar Darlington ■Maximum Ratings Ta=250 C ollector-to-B ase Voltage VCBO 120 V Collector-to-E m itter Voltage VCEO 100 V Em itter-to-Base Voltage V ebo 6 V Collector Current

Contextual Info: SANKEN ELECTRIC CO LTD SSE 2SC3519 2SC3519A /-r>i “ 25*C V Absolute M ax im u m Ratinas “ Symbol VCBO VcEO Vebo lc Ib Pc T) 2SC3519 160 160 2SC3519A 180 180 Unit — rVr — • 7^D 741 DGQCnsa 2flfl HSAKJ Silicon NPN Epitaxial Planar ☆APT ☆Complement to type 2SA1386 thru 2SA1386A

2SC2340

Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
Contextual Info: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

marking code P2T

Abstract: PXT4401 PXT4403 transistor marking code p2T
Contextual Info: m bfaSBTBl 0025^82 741 * A P X N AMER PHILIPS/DISCRETE PXT4403 fc.7E I> SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar e p ita xia l tran sisto r, housed in a SO T89 envelope. It is intended fo r linear sw itch in g applications. The co m p le m e n tary ty p e is P X T4401.

lg bd645

Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
Contextual Info: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

BC 741

Contextual Info: DÍV1CE TYPE PACKAGE 8VCEO BVCBO BVEBO ICBO VCB V i M IN M AX HFE @ VC i IC (V | M IN M AX (V l-n A ) COB FT |p l| M A X < M H*Ì NF (d til M A X 5 5 5 5 5 15 15 15 15 15 30 30 25 25 25 180-460 380-800 180-800 180-460 380-800 5 5 5 5 5 2 2 2 2 4 5 4 5

sot-363 702

Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

2N5415

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25

IC 741 1 PC

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4684 ST0R0B0 FLASH APPLICATIONS. Unit in ran MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX 5.2 ± 0.2 . High DC Current Gain: hFE=800~3200 VcE=2V, Ic=0.5A hFE=250(Min.)(V c e =2V, Ic =4A) in . Low Collector Saturation Voltage

Contextual Info: Power Transistors 2SD1485 2SD1485 Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1054 ■ Features • V ery good linearity of DC current gain hFE • Wide area of safety operation (ASO) • High transition frequency (ft)

MG100H2CL1

Abstract: ic 741 free MG100H2CL
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-05,3±Ol5 FEATURES : . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE= 80 Min. (Ic=100A)

SN30SC4

Abstract: D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20
Contextual Info: RECTIFIER DIODES Low frequency rectifying Single Diodes M1F 1F Absolute Maximum Ratings Type No. Color Code VRM M1F60 80 D1F20 60 60A D1N20 60 DINF60 D2F20 60 D3F60 D4F60 S2V20 60 S3V20 60 — — — — — — — — — — — — Red Blue Red Blue Tj

bd 743 transistor

Abstract: 9410A bd 743
Contextual Info: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − http://onsemi.com hFE • • • • = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc

hfe1

Abstract: KSC2001 741 Hfe
Contextual Info: KSC2001 NPN SILIC O N T RA N SIST O R GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION PT=600 mW TO-92 High hre and LOW VCE(sat) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage