2SC4684 Search Results

C4684

Abstract: 2SC4684 IC-106 05A800
Contextual Info: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)

C4684

Abstract: 2SC4684
Contextual Info: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) · Low collector saturation voltage

C4684

Abstract: 2SC4684 datasheets 2SC4684
Contextual Info: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage

Contextual Info: TOSHIBA 2SC4684 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS • High DO Current Gain : hFE i = 800-3200 (Vce = 2 V, In = 0.5 A) : hFE (2) = 250 (Min.) (Vce = 2 V, Ic = 4 A)

Contextual Info: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 STROBE FLASH APPLICATIONS. U n it in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • H igh D C C urrent G ain ' h F E 1 = 800—3200 (V c e = 2V, I c = 0.5A) : hF E (2) —250 (M in .) (V CE = 2V, I C = 4A)

IC 741 1 PC

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4684 ST0R0B0 FLASH APPLICATIONS. Unit in ran MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX 5.2 ± 0.2 . High DC Current Gain: hFE=800~3200 VcE=2V, Ic=0.5A hFE=250(Min.)(V c e =2V, Ic =4A) in . Low Collector Saturation Voltage

c4684

Abstract: c468 2SC468 2SC4684 datasheets 2SC4684
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC4684 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High power dissipation.

Contextual Info: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage

2SC4684

Contextual Info: TO SH IBA 2SC4684 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4684 MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE 1 = 800-3200 (Vc e = 2 V, Iq = 0.5 A) : hFE (2) = 250 (Min.) (VCE = 2 V, Iç; = 4 A)

2SC4684

Contextual Info: TO SH IBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS A 6.8MAX., • • • 5.2 ± 0.2 High DC Current Gain : hFE (i) = 800-3200 (Vce = 2 V, Ic = 0.5 A) : hFE (2) = 250 (Min.) (Vc e = 2 V, Iç = 4 A)

c4684

Abstract: 2SC4684
Contextual Info: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage

c4684

Contextual Info: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage

Contextual Info: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE l = 800-3200 (Vqe = 2 V, Iß = 0.5 A) : hFE (2) = 250 (Min.) (Vc e = 2 v > IC = 4 A)

Contextual Info: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage

c4684

Abstract: 2SC4684 2SC4684 datasheets
Contextual Info: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage

2SC4684

Contextual Info: TOSHIBA 2SC4684 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4684 Unit in mm STROBE FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hFE 1 = 800-3200 (Vce = 2 V, Ic = 0.5 A) : hFE (2) = 250 (Min.) (VCE = 2 V, Iç; = 4 A)

C4684

Abstract: 2SC4684
Contextual Info: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)

C4684

Abstract: 2SC4684 0310a
Contextual Info: 2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *