711GFL5B Search Results

BFW30

Abstract: IEC134
Contextual Info: Product specification Philips Semiconductors NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL *7 ^ 3 / StE D • S '? BFW30 711Gfl5b DtmbOSb 17E BiPHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope, with Insulated electrodes and a shield lead connected to the

BFP91A NPN PHILIPS

Abstract: transistor D 1666 BFQ23C BFP91A f 1405 zs 1557 transistor SOT173
Contextual Info: Product specification Philips Semiconductors PNP 5 GHz wideband transistor BFQ23C PHILIPS INTERNATIONAL DESCRIPTION SbE ]> • 711Gfl5b 0DMS410 S41 ■ P H I n ] PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X micro-stripline envelopes. It is

philips BFW30

Abstract: B 1184 BFW30 transistor 1183 IEC134
Contextual Info: Product specification Philips Semiconductors NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL *7 ^ 3 / StE D • S '? BFW30 711Gfl5b DtmbOSb 17E BiPHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope, with Insulated electrodes and a shield lead connected to the

transistor 2n930

Contextual Info: 2N930 PHILIPS INTERNATIONAL T V SbE D ' 2 f ~ 711Gfl5b DDMESbE GST 17 • PHIN N-P-N SILICON PLANAR TRANSISTOR N-P-N transistors in TO -18 metal envelopes with the collector connected to the case. These devices are primarily intended for use in high performance, low-level, low-noise amplifier appli­

d 1879 TRANSISTOR

Abstract: transistor D 1666 BFQ23C transistor d 1557 BFP91A B 1449 transistor TRANSISTOR D 471
Contextual Info: Philips Sem Product specification “^ 3 / — / f PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> • BFQ23C 711Gfl5b 0 D M S 4 1 0 S41 PINNING PNP transistor in

OM976

Abstract: 0071547 philips hybrid OM976
Contextual Info: 7110fl2b 0 0 7 1 S 4 3 Philips Semiconductors TDM M P H I N Preliminary specification Video output amplifier FEATURES OM976/1 PINNING • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input • Low internal thermal resistance

BYV79

Abstract: T71A m0718 m1521
Contextual Info: BYV79 SERIES PHILIPS INTERNATIONAL SbE D • 7HDflSb DD414Sb T67 « P H I N T - 0 1 - 1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery

fqmb

Abstract: LD 25 V BUK793-60A philips ah 686
Contextual Info: Philips Components Data sheet status P re lim in a ry s p e c ific a tio n date of issue PHILIPS March 1991 BUK793-60A PowerMOS transistor SensorFET INTERNATIONAL SbE ]> Li GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a

80C32-16

Abstract: 07233
Contextual Info: P h ilips S e m ico n d uctors M ilita ry M icrop ro cesso r Products P ro du ct s p ecifica tio n CMOS single-chip 8-bit microcontroller FEATURES ? ° 2 32 ?532‘ 15 80C52/80C52-16 To insure a good power-up reset, the RST pin must be high long enough to allow the oscillator time to start up (normally a few

Contextual Info: Philips Semiconductors Linear Products Product specification EIA-232-D/V.28 driver/receiver MC145406 DESCRIPTION PIN CONFIGURATION The MC145406 is a silicon-gate CMOS 1C that combines 3 drivers and 3 receivers to fulfill the electrical specifications of standards

SAA2051

Abstract: 51fs Mka7 IN23B IN34A in67a
Contextual Info: Philips S em iconductors Prelim inary specification DCC read amplifier READ 3 TDA1380 FEATURES • Single 3 V supply • Low power consumption • Differential inputs for low power head configuration COMPACT CASSETTE • Can be used with 1st, 2nd and 3rd generation digital

SAA7151B

Abstract: SAA7191 SAA7191B SAA9051 SAA9065 U714
Contextual Info: P relim in a ry s p e c ific a tio n P h ilip s S e m ic o n d u c to rs V ideo P ro d u c ts Video enhancement . and D/A processor VEDA 1. FEATURES -CM O S circuit to enhance video data and to convert luminance and colour-difference signals from digital-to-analog

philips CTC 1351 transistor

Abstract: P8XC592 RBL 43 P TRANSISTOR 80C51 P80C592 P80C592FFA P80C592FHA P83C592 P83C592FFA P83C592FHA
Contextual Info: Philips Semiconductors Product specification 8-bit microcontroller with on-chip CAN CONTENTS P8xC592 14 INTERRUPT SYSTEM Interrupt Enable and Priority Registers Interrupt Vectors Interrupt Priority 1 FEATURES 2 GENERAL DESCRIPTION 14.1 14.2 14.3 3 ORDERING INFORMATION

MBG453

Abstract: S0068 BAS15
Contextual Info: Philips Semiconductors Product specification High-speed diode BAS15 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD68 DO-34 package The BAS15 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34)

flyback data pin diagram

Abstract: tv transmitter amplifier circuit tda2595 components in horizontal output colour tv circuit Block Diagram of colour tv transmitter
Contextual Info: PHILIPS INTERNATIONAL SbE D • 711GÖEL 003SL04 IDI H P H I N TDA2595 A T-77-07-13 HORIZONTAL COMBINATION GENERAL DESCRIPTION The TDA2595 is a monolithic integrated circuit intended for use in colour television receivers. Features • Positive video input; capacitively coupled source impedance < 200 SI

K 3911

Abstract: BUK451-60A BUK451-60B T0220AB
Contextual Info: Philips Components D ata sheet status Preliminary specification date of issue March 1991 PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

spindle motor control

Abstract: Spindle VCM IPA5147K PLCC52 TDA5147K Hard Disk drive spindle motor control inductive sense IRVCM
Contextual Info: Philips Semiconductors Product specification 12 V Voice Coil Motor VCM driver and spindle motor drive combination chip TDA5147K FEATURES • Retract circuit operates down to 2 V Spindle motor driver • Internal thermal sense circuitry with an over temperature

HA 11719

Abstract: LQFP32 PCD5002 PCD5002H UAA2080 UAA2082
Contextual Info: Philips Semiconductors Product specification Advanced POCSAG and APOC-1 Paging _ . * * Decoder CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 LICENSE 6 BLOCK DIAGRAM 7 PINNING 8 FUNCTIONAL DESCRIPTION 8.1 8.2 8.3 8.4 8.5

74LVC377

Abstract: 74LVC377PW S020
Contextual Info: Philips Semiconductors Product specification Octal D-type flip-flop with data enable; positive-edge trigger 74LVC377 FEATURES DESCRIPTION • Wide supply voltage range of 1,2V to 3.6V The 74LVC377 is a low-voltage Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

80C51

Abstract: 80C52 87C528 P87C528 A8-A13
Contextual Info: Philips Semiconductors Military Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller 87C528 DESCRIPTION The 87C528 single-chip 8-bit microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51

circuit diagram of rc transmitter and receiver

Abstract: ocs ctc diagram remote control receiver and transmitter SCC2692 ir transmitter and receiver ir transmitter receiver SCC2692AC1F28 SCC2692AC1F40 SCC2692AC1N40 SCC2692AE1F28
Contextual Info: INTEGRATED CIRCUITS SCC2692 Dual asynchronous receiver/transmitter DUART Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 7110A5L, 0Qci0144 15b Philips Semiconductors Product specification Dual asynchronous receiver/transmitter (DUART)

2n4416

Abstract: 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A
Contextual Info: P hilips Sem iconductors M 7 1 1 0 fl2 ti DDbBDTB 151 • IP H IN N-channel field-effect transistor Product specification 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES o CO • Interchangeability of drain and source connections < SYMBOL • Low noise PARAMETER

BC 937

Abstract: 16Oi Philips MBB BDS933 BDS935 BDS937 BDS939 BDS941 t33 smd A93 SMD
Contextual Info: PHILIPS INTERNATIONAL SbE D • 711002b 00431bD 54T H P H I N Philips C o m p o n e n ts T -3 7 -D 5 “ BDS933/935/937/939/941 Data sheet status Product specification NPN Silicon epitaxial base date of issue April 1991 power transistors DESCRIPTION PINNING - SOT223

BGY133

Abstract: 65ZS 88-108 rf amplifier BGY132 vhf power module
Contextual Info: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEA TUR ES D ES C R IPTIO N • Broadband V H F amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element