70NS1 Search Results

K6F2008S2E

Abstract: K6F2008S2E-F
Contextual Info: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

KM616V4000BL-L

Abstract: KM616U4000B
Contextual Info: Back KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996

BA100 diode

Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Contextual Info: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)

K1S32161CC

Abstract: K1S32161CC-I
Contextual Info: Preliminary K1S32161CC UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark July 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S32161CD-FI70

Contextual Info: K1S32161CD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 04, 2004 Preliminary 1.0 Finalize - Added Lead Free Product April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S32161CC

Abstract: K1S32161CC-I
Contextual Info: K1S32161CC UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft July 14, 2003 1.0 Finalize -Corrected tOH from 5ns to 3ns September 20, 2004 Final

Contextual Info: HIGH VOLTAGE RECTIFIER STACKS 70ns-150ns Recovery • Axial Leaded ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (in oil) (to) Volts Amps Amps 55°C Reverse Current @ Vrwm Forward Voltage

EM640FP16

Contextual Info: EM640FP16 Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 24 , 2002 0.1 2’nd Draft Changed Icc, Icc1 value November 11 , 2002

Contextual Info: Preliminary CMOS SRAM K6F2008R2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

transistor a16

Abstract: SRAM 6T
Contextual Info: MoBL3 : Compatibility with MoBL /MoBL2™ SRAMs Introduction MoBL3: The High-density Solution Cypress has been on the leading edge in supporting low-power applications with its More Battery Life™ MoBL® products. MoBL products have been the key in extending battery life in several wireless applications. In continuing the tradition of supplying low-power, high-density solutions for power-sensitive applications, Cypress has introduced the

KM616U4000BLTI-8L

Abstract: KM616U4000B
Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996

K1S16161CA

Abstract: K1S16161CA-I
Contextual Info: Preliminary K1S16161CA UtRAM Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

ic 4013 pin configuration diagram

Contextual Info: INTEGRATED DEVICE Integrated Device Technology, Inc. m M7E D MÔ2S771 0010061 S * I D T SUBSYSTEMS FLEXI-PAK FAMILY 32K x 32 128KX32 CMOS STATIC RAM MODULES IDT7M4003 IDT7M4Q13 - T - M t - 2 3 - m FEATURES: DESCRIPTION: • T h e ID T 7 M 4 0 0 3 /4 0 1 3 a re hig h -sp e ed , high-density

EM641FP16

Contextual Info: merging Memory & Logic Solutions Inc. EM641FP16 Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark October 24 , 2002 Preliminary 0.0 Initial Draft