K6F2008S2E Search Results

K6F2008S2E Datasheets (3)

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Samsung Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K6F2008S2E		Samsung Electronics		Original	PDF	131.27KB	9
K6F2008S2E-F		Samsung Electronics		Original	PDF	131.26KB	9
K6F2008S2E Family		Samsung Electronics	256K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet	Original	PDF	131.27KB	9

K6F2008S2E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K6F2008S2E Abstract: K6F2008S2E-F Contextual Info: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	k6f2008s2e 256kx8 k6f2008s2e-f	PDF
TC554161A Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	bh62uv4000 bh616uv4010 bh62uv8000 bh616uv8010 +13bh62uv1600 bh616uv1610 tc55v4000 tc55vem208astn t16lv8017 k6x8008t2b tc554161a hy62wt08081e k6x8008c2b cy62148e r1lv0416 k6f1616 k6t0808c1d	PDF
HM628100 Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 Contextual Info: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA	Original	nov-30-2008 bs62lv256 m5m5256d-g k6x0808t1d +14cy62256v is62lv256al bs62lv1027 bs616lv1010 cy62256 m5m5256d-l hm628100 hm6216514 k6x0808c1d bs616lv2016 bs616lv2019 bs616uv2019 k6x8008c2b bs62lv2006	PDF
TC55VEM416AXBN Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	bh62uv4000 bh616uv4010 bh62uv8000 bh616uv8010 +16bh62uv1600 bh616uv1610 tc55v4000 tc55vem208astn t16lv8017 k6x8008t2b tc55vem416axbn k6f8016u6b hy62wt08081e k6x4008c1f bh-series cy62147cv30 hynix cross reference samsung k6x1008c2d cy62148e tc55vem216abxn	PDF