700044 Search Results

175-2

Abstract: cr2032a CR2032 700044 Renata 175-2
Contextual Info: Power Modules Power Modules Vertical Versions for Soldering With decoupling diodes RENATA RENATA Part name Part number 175-2 700044 Nominal Nominal capacity voltage V (mAh) 235 Operating temperature range: Self discharge rate: Specifications - module housings:

J161 mosfet transistor

Abstract: MOSFET J161 100B6R8JW
Contextual Info: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

transistor A114

Abstract: c101 TRANSISTOR transistor C101 AGR18060E AGR18060EF AGR18060EU JESD22-A114
Contextual Info: Preliminary Product Brief May 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for

PB03-065RFPP

Abstract: AGR18090EF c101 TRANSISTOR transistor A114 transistor C101 AGR18090EU JESD22-A114 AGR18090E PB03-090RFPP
Contextual Info: Preliminary Product Brief April 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for

7809a

Abstract: 7809R RG-8 coaxial RG-8 RG-8 coaxial cable 78xx series rg58 foam FT 7805 7977R 7806a
Contextual Info: 516-2012:QuarkCatalogTempNew 8/23/12 10:13 AM Page 516 WIRE & CABLE TEST & MEASUREMENT 3 Broadcast Coaxial and Video Cable Brilliance Precision Analog Video Coaxial Cable RoHS 8279 8281 23 AWG Solid 22 AWG (7 x 29) Mfr.’s Type Nom. OD (In.) Nom. Imp.

Contextual Info: Product Specification PE4125 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range

ETC1-1-13

Abstract: PE4125 PE4125-EK
Contextual Info: Product Specification PE4125 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range

Contextual Info: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: Preliminary Product Brief April 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal

TRANSISTOR A114

Abstract: AGR09030E AGR09030EF AGR09030EU JESD22-A114 CDM 82 RF MOSFET CLASS AB
Contextual Info: Preliminary Product Brief April 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

cl2x

Abstract: rg11 CABLE COAX Belden Wire 8212 1862A 40198 1347A
Contextual Info: 512-2012:QuarkCatalogTempNew 8/23/12 10:05 AM Page 512 WIRE & CABLE TEST & MEASUREMENT 3 Brilliance Broadcast Cables Brilliance® Digital Audio Snake Single Pair Cable ᭤ Beldfoil Shielding ᭤ Outer Jacket: PVC ᭤ Nominal Impedance: 110 Ω ᭤ Insulation: Gas Injected High-Density

42756

Abstract: 28-RG058 RG303 power MIL-C-17G rg213 CABLE COAX coaxial rg 8 rg213 COAX STRANDED RG213 5156-0 MIL-C-17G rg223
Contextual Info: 515-2012:QuarkCatalogTempNew 8/23/12 10:08 AM Page 515 3 Broadcast Coaxial Cable High Temperature FEP Coaxial Cable RoHS RoHS 9273 010100 30 AWG 7 x 38 Black PVC Jacket Mfr.’s Type Nom. Imp. (Ω) RG/U Stock No. 0.097 75.0 — 70004334 PER 100' SPOOL Stock

175-0B

Abstract: iSABELLEN renata 1000-1 1000-1 diodes 700041 700035
Contextual Info: Encapsulated Batteries Power Modules Overview Why use encapsulated batteries (Power Modules)? RENATA Power Modules were specially designed for applications with long life expectations in a difficult environment, e.g. outdoors or under dusty or high humidity conditions. The cell is

Transistor J182

Contextual Info: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Preliminary Product Brief April 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

AGR21060EF

Abstract: AGR21060E AGR21060EU JESD22-A114
Contextual Info: Preliminary Product Brief April 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless

cl2x

Abstract: 3072F 60297 9463DB RG-22B/U
Contextual Info: 517-2012:QuarkCatalogTempNew 8/23/12 10:14 AM Page 517 3 Coaxial, Twinaxial, Microwave and Triaxial Cables RoHS 25 AWG TC Mfr.’s Type 100' Spool Nom. OD In. Nom. Imp. (Ω) Shield Coverage (%) RG/U Stock No. 12.2 0.240 124 100.0 — 70004556 8.8 0.350 150

AGR18060EF

Contextual Info: Product Brief August 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for

Transistor J182

Contextual Info: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

83317E

Abstract: 83322E 83334E 83319E 83349 83348e 83352E
Contextual Info: 523-2012:QuarkCatalogTempNew 8/23/12 10:52 AM Page 523 3 Multiconductor Cable, Audio and Control Cable RoHS High-Temperature Control and Instrumentation Cable RoHS WIRE & CABLE Tinned 25 AWG, 7 x 33 stranded conductors, polyethylene insulated, Beldfoil aluminum-polyester shields and chrome

B-237-08XT

Abstract: 220-04XT B-237-08X
Contextual Info: 10 \ 9 LOOSE PIEC E F MATERIA L NUMBER I90 7 0 0 0 0 5 ALTERNATE NUMBER AA-220-02X AA-220-04X AA-220-06X A A -2 2 I-06X I90 7 0 0 0 I3 AA-22I-08X I 9 0 7 0 0 0 I 5 A A -2 2 I-IOX I9 0 7 0 0 0 I9 AA -22I-209X I 9 0 7 0 0 0 2 I A A - 2 2 2 - IO X I 9 0 7 0 0 0 2 3 A A - 2 2 2 - I4X

AGR09060EF

Abstract: AGR09060EU JESD22-A114
Contextual Info: Preliminary Product Brief April 2003 AGR09060E 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

AGR09120EF

Abstract: AGR09120EU JESD22-A114
Contextual Info: Preliminary Product Brief April 2003 AGR09120E 120 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09120E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple