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    AGR09060EF Search Results

    AGR09060EF Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AGR09060EF
    		Agere Systems FET, 60W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET Original PDF 25.39KB 2
    AGR09060EF
    		Agere Systems 60 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF 361.28KB 2

    AGR09060EF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JESD22-C101-A

    Abstract: AGERE JESD22-C101A AGR09060E AGR09060EF AGR09060EU
    Contextual Info: Preliminary Product Brief November 2003 AGR09060E 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09060E Hz--895 AGR09060E PB04-010RFPP PB03-084RFPP) JESD22-C101-A AGERE JESD22-C101A AGR09060EF AGR09060EU PDF

    AGR09060EF

    Abstract: AGR09060EU JESD22-A114
    Contextual Info: Preliminary Product Brief April 2003 AGR09060E 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09060E Hz--895 AGR09060E PB03-084RFPP PB03-074RFPP) AGR09060EF AGR09060EU JESD22-A114 PDF