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    AGR21060E Search Results

    AGR21060E Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AGR21060E
    		TriQuint Semiconductor 60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF 305.88KB 5
    AGR21060EF
    		Agere Systems FET, 60W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Original PDF 30.46KB 2
    AGR21060EF
    		Agere Systems 60 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF 367.08KB 2
    AGR21060EU
    		Agere Systems FET, 60W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Original PDF 30.46KB 2
    AGR21060EU
    		Agere Systems 60 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF 367.08KB 2

    AGR21060E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AGR21060EF

    Abstract: AGERE AGR21060E AGR21060EU JESD22-C101A JESD22-A114B
    Contextual Info: Preliminary Product Brief November 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide


    Original     		agr21060eagr21060euagr21060efpb04-015rfpp+4pb03-096rfppagerejesd22-c101ajesd22-a114b PDF

    AGR21060EF

    Abstract: 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060E AGR21060EU C15B material sheet C15A
    Contextual Info: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		agr21060eagr21060euagr21060ef100b8r2jca500x+6cdm 07c14ajesd22-c101ar210c15b material sheetc15a PDF

    ti c11b

    Contextual Info: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		agr21060eagr21060euagr21060efti c11b PDF

    AGR21060EF

    Abstract: AGR21060E AGR21060EU JESD22-A114
    Contextual Info: Preliminary Product Brief April 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		agr21060eagr21060euagr21060efpb03-096rfpp+2pb03-071rfppjesd22-a114 PDF

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		cus937tga2517tqp6m9002tqm653029+7tgs4304sg-o1-16tga2503tat7469tga9092-scc854651ah125 PDF

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		tga2517tqp6m9002tqm7m5013tga4943-sl+6cgb241tqm6m4003bt ag402tga4956-smtqm6m4048tga9092-scc PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		ca03-005rfpp-7ca03-005rfpp-6agra10emapp550+8app550tmagr09085efapp550tm and app530tm400-khzagra 30taad08ju2agr09030efagr09030gum PDF