700 H2A Search Results

PK MUR 460

Abstract: analog devices 751n optocoupler 4 pin dip MOC 3861 EA SOT-23 UC3842 MOTOROLA S5502
Contextual Info: MC33363 Advance Information High Voltage Switching Regulator The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on–chip 700 V/1.0 A SenseFET power switch,

EA SOT-23

Contextual Info: MC33363A Product Preview High Voltage Switching Regulator The MC33363A is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on–chip 700 V/1.5 A SenseFET power switch,

H2A1-H405

Contextual Info: ROITHNER LASERTECHNIK PRESENTS. NEW IR SENSOR CARD IR sensor card, price list page 72 ISC-4-ALL, 700.1700 nm, extreme sensitive IR sensor card, 4 fields each 19 x 19 mm² NEW HIGH POWER UV LEDS Power UV-LED, hex emitter, 1W, price list page 43 H2A1-H365, 365 nm, 25 mW at 350 mA, Uf = 3.7 V, +/-75°, lambertian silicone lens

BC237

Abstract: MSA1022 msc2295 BF391 "direct replacement"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for

Hexagonal

Abstract: H2A3-H530
Contextual Info: H2A3-H530 High Power single chip LED H2A3-H530 is a InGaN based, high power 530 nm single chip LED in standard hexagonal Aluminum package for general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are

Hexagonal

Abstract: H2A3-H625
Contextual Info: H2A3-H625 High Power single chip LED H2A3-H625 is a InGaN based, high power 625 nm single chip LED in standard hexagonal Aluminum package for general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are

Contextual Info: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE ATB H2A Abkündigung nach OS-PD-2008-016 Obsolete acc. to OS-PD-2008-016 Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie; planvergossen • Besonderheit des Bauteils: extrem hohe

NTC Thermistors EPCOS 10K

Abstract: smd code H2A 6170 TC SMD H2A SM10B-SRSS-TB
Contextual Info: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE AB H2A Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie; planvergossen • Besonderheit des Bauteils: extrem hohe

SMD H2A

Abstract: smd code H2A SM10B-SRSS-TB jst smd code
Contextual Info: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE T H2A Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie, plan vergossen • Besonderheit des Bauteils: extrem hohe

SMD H2A

Abstract: smd code H2A h2a smd SM10B-SRSS-TB Q65110A5234
Contextual Info: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE T H2A Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie, plan vergossen • Besonderheit des Bauteils: extrem hohe

code 4JW

Abstract: ac 187 and 188 A2511BC2BD1 A2511FH1AD1 A2511FS1BD1 AC 188
Contextual Info: ? ilic.on. . Rectifier Stacks I A2511 - - - - - - - - - - - - - Up to 600 peak reverse volts PRV per cell Up to 9.4 amps DC output per leg free convection rating T E R M IN A L OUTLINE DRAW ING -A2511 Features — Up to 99% in certain applications. — Forward voltage drops of less than one volt per cell.

code 4JW

Abstract: 000CP 5987 ac 187 and 188 A190 A2011BC1AD1 A2511BC2BD1 A2511FH1AD1 A2511FS1BD1 mci 4515
Contextual Info: Medium & High Current Rectifier Modules A2011BC1AD1 i s a 200V, sin g le phase center tap, using A20 c e lls on type 11 Fins, capable o f conducting 6 .3A ave .p er ce ll at 1800 C conduction angle in free a ir or 9.8A per ce ll in 2000 lin e a r feet per minute forced a ir.

A2011BC2BD1

Abstract: A2011FS1BD1 AK 3512 AMP terminal #187 tap AC 126
Contextual Info: Silicon Rectifier Stacks A2011 High Efficiency — Up to 99% in certain applications. Excellent Regulation — Forward voltage drops of less than one volt per cell. Low Leakage — Excellent for magnetic am plifier applications. Wide Range of Operating and Storage Temperatures — Will operate from — 6 5 °C to 175°C.

transistor BC 245

Abstract: HBC546
Contextual Info: HI-SINCERITY Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/4 MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. TO-92

bf244

Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS 25 Vdc

TO-226-AE

Abstract: BC108 characteristic JFET BF245 BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C

MPF102 equivalent transistor

Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25

C502A

Abstract: TL431A TL431B TL431C precision shunt regulators 431 Cystek
Contextual Info: CYStech Electronics Corp. Spec. No. : C502A3 Issued Date : 2003.03.26 Revised Date : 2008.10.09 Page No. : 1/6 Adjustable Precision Shunt Regulators TL431A3 Description TO-92 The TL431A3 series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any

BC237

Abstract: S11S C4 SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc

WT transistor

Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further