7 BAND Search Results

pa 66 gf

Abstract: MGFC40V7177 MGFC40V7177B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC40V7177B s<^pa,a' 7 .1 — 7 .7 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 .1 — 7 .7

aeg t 133

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V7177A | 7 .1 — 7 .7 6 H z BAND 8 W INTERNALLY MATCHED GaAs FET j DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is an in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo r use in 7 . 1 — 7 .7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MINA?* p R Ö MGFC39V7177A - ' y. «'-' f ;«ep^^ e ° ‘ 7 .1 -7 .7 G H * BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 9 V 7 1 7 7 A is an internally im ped an ce-m atched GaAs power F E T especially designed for use in 7 . 1 —7 .7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785 7 .7 —8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 0 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 - 8 . 5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177B so" pa „m C U '1-' . 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 B is a n in te rn a lly im p e d a n c e -m a t c h e d G aA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7

MGFC40V7177

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC40V7177 7 .1 ~ 7 .7 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N T h e M G F C 4 0 V 7 1 7 7 is an in te rn a lly O U T L IN E D R A W IN G im p ed an ce-m atch e d G aA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> Ì MGFX36V0717| i 3 ; \ |_ 1 0 . 7 ~ l l . 7 G H z BAND 4 W INTERNALLY MATCHED GaAs FET j DESCRIPTION The M G F X 3 6 V 0 7 1 7 is an internally impedance matched GaAs power FET especially designed for use in 1 0 .7 — 1 1 .7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> „OJ»«*"*'' So«'* MGFC39V7177A p^ 1 7 .1 — 7 .7 G H z BAND 8 W IN TER N A LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 7 .1 —7 . 7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785B Vi are l'niS 7 .7 — 8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an in te rna lly im p eda nce -m atche d GaAs power F ET especially designed fo r use in 7 .7 - 8 . 5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 — 8 .5G H z BAND 16W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 — 8 .5 GHz band amplifiers. The herm etically sealed metal-ceramic

7785A

Abstract: C39V7785A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 7785A 7 .7 8.SG Hz BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7 . 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic

MGFC40V7785

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V7785 7 .7 — 8.5GH z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 —8 . 5 G H z band am plifiers. The herm etically sealed metal-ceramic

39V77

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V77 8SA 7 .7 ~ 8 .5 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A isan internally im pedance-m atched GaAs power FET especially designed fo r use in 7 , 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785B preU 'i ‘" ' 7 .7 ~ 8 .5 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 4 0 V 7 7 8 5 B is an internally im ped an ce-m atched GaAs power F E T especially designed fo r use in 7 . 7 - 8 . 5

HA17733

Abstract: HA17733P 733-P 733g 733P hitachi ha-1 Video Amplifier 733 HA17733G DP-14 34Kf
Contextual Info: H A 1 7 7 3 3 G .H A 1 7 7 3 3 P .H A 1 7 7 3 3 * ~ VM,° HA1 7733 is a video amplifier for wide band w ith small phase­ delay and excellent gain stability. This amplifier eliminates external phase compensation and can fix the gain 10, 100 or 4 0 0 without using external elements. If some external

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7 .1 —7.7G Hz BAND 1 0W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 is an in te rn a lly im pedance-m atched G aA s po w er F E T especially designed fo r use in 7 .1 - 7 . 7 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m etal-ceram ic

Contextual Info: Lead Type Monolithic Crystal Filters H C -4 9 /T 2 P 0 L E Fundamental; 10M Hz~15M Hz •Generic Specification Item Name ajv. 1 0 7 0 7 AH 1 0 7 1 2 AH 1 0 7 1 5 AH 10 7 3 0 A H Nominal Frequency Pass Bandwidth Ripple Insertion Loss Terminal Impedance [MHz]

LC6502

Abstract: LC6502C LC7060 sanyo lc7060 LC7523 sanyo lc7560 one chip graphic equalizer graphic equalizer 12db LC7560 DIP28
Contextual Info: b3E 7 cH 7 0 7 b D LC7523, 7523M 0 0 1 1 7 1 M 707 • SANYO TSA J SEMI CONDUCTOR CORP C M O S LSI 3073A Electronic Volume Control for Graphic Equalizer F u n c tio n s •On-chip electronic volume control for graphic equalizer with 7 bands each of right/left.

MICRONAS uac

Abstract: UAC 3556B sub-woofer with 5.1 amp circuit diagram subwoofer preamp diagram subwoofer PREAMP circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 40 led VU-METER UAC 3554B UAC 3556B equivalent 5v subwoofer amplifier
Contextual Info: ADVANCE INFORMATION MICRONAS Edition Aug. 2, 2001 6251-544-1AI UAC 3554B, UAC 3556B Universal Serial Bus USB Codecs MICRONAS UAC 3554B, UAC 3556B ADVANCE INFORMATION Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 7 7 7 7 7 7 7 7 7 7 7 8

pa 66 gf

Abstract: MGFC40V7785B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> & M G FC 40V 7785B 7 .7 —8 .5 G H z BAND 1 0 W INTERNALLY M ATCHED GaAs FE T DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 7 . 7 — 8 . 5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785B •b e U 7 .7 —8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an internally im p e d a n c e-m a tc h e d GaAs pow er F E T especially designed fo r use in 7 . 7 — 8 . 5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFX39V0717 1 0 .7 — 1 1 .7 G H z BA N D 8 W INTERNALLY M ATCHD GaA$ FET DESCRIPTION The M G F X 3 9 V 0 7 1 7 is an internally impedance matched G a A s pow er F E T especially designed for use in 1 0 .7 - 1 1 .7 G H z band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI S EM IC O N D U CTO R <G aA s FET> MGFC36V7177 iro d u c t » o n p\an fo r P dicontinue 7 . 1 - 7 . 7 GHz BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7

MGFC40V7177A

Abstract: pir 5 S28C
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177A PREUM'Ni ì ? y I * . 1 “ “ Nol««' ' 1,e»'>c'"fl,ts to cV»ân9 3 -" s°mep 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 A isan internally im p e d a n c e -m a tc h e d