MGFC40V7785 Search Results

Contextual Info: < C band internally matched power GaAs FET > MGFC40V7785 7.7 – 8.5 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785 7 .7 ~ 8 .5 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 7 8 5 is an in te rn a lly Im pedance-m atched GaAs p o w e r F E T especially designed fo r use in 7 . 7 - 8 . 5 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m etal-ceram ic

MGFC40V7785A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> _. k n V MGFC40V7785A m H l& s t <.P*c 2 , " t o c h » t' 9 0 ' *"“M L »<•5ub,e s p^ 7 .7 — 8 .5 G H z BAN D 10W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION The M G F C 4 0 V 7 7 8 5 A is an in te rna lly im p e d a n ce -m a tch e d

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785B Vi are l'niS 7 .7 — 8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an in te rna lly im p eda nce -m atche d GaAs power F ET especially designed fo r use in 7 .7 - 8 . 5

MGFC40V7785

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785 7.7 ~ 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004

Contextual Info: < C band internally matched power GaAs FET > MGFC40V7785 7.7 – 8.5 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m