6V MOTOR 500MA CONTINUOUS CURRENT Search Results

darlington array 2804

Abstract: dip 18pin ic MIC2803BN Switching diode 50V 200mA IC 2804 MIC2803 MIC2803BWM MIC2804 MIC2804BN MIC2804BWM
Contextual Info: MIC2803/2804 Micrel MIC2803/2804 High-Voltage High-Current Darlington Array Preliminary Information General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.

darlington array 2804

Abstract: MIC2804 darlington array MIC2803BN
Contextual Info: MIC2803/2804 High-Voltage High-Current Darlington Array Preliminary Information General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.

darlington array 2804

Abstract: ic base for 40 pin DIP ic IC 2804 darlington array MIC2803BN MIC2803 MIC2803BWM MIC2804 MIC2804BN MIC2804BWM
Contextual Info: MIC2803/2804 Micrel MIC2803/2804 High-Voltage High-Current Darlington Array Not Recommended for New Designs General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.

C2804

Abstract: transistor c2804
Contextual Info: M/C2803/2804 Miere / MIC2803/2804 High-Voltage High-Current Darlington Array Preliminary Information General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.

IC 2803

Abstract: 2803 relay driver ic IC 2804 darlington array 2804 transistor 6J U IC2804 2803b
Contextual Info: MIC2803/2804 High-Voltage High-Current Darlington Array Not Recommended for New Designs General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.

CS-3710M15

Contextual Info: CS-3710 CS-3710 0.5A Fully Protected Dual H-Bridge Driver Description The CS-3710 is a smart dual 0.5A Hbridge driver used in microprocessor controlled stepper motor systems. The CS-3710 provides bidirectional current using two independent 0.5A H-bridge drivers. On chip commutation diodes

CS-3710M15

Contextual Info: CS-3710 CS-3710 0.5A Fully Protected Dual H-Bridge Driver Description The CS-3710 is a smart dual 0.5A Hbridge driver used in microprocessor controlled stepper motor systems. The CS-3710 provides bidirectional current using two independent 0.5A H-bridge drivers. On chip commutation diodes

vn10K

Abstract: VN10KN
Contextual Info: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

jedec package TO-236AB

Abstract: vp2110k1-g P1AW mos fet marking k1
Contextual Info: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: b3E • b24«U 27 O O lS D S b M IT S U B IS H I GG6 « m D G TL ìa M IT S U B IS H I B IPO LA R D IG IT A L .Cs M 54547P L O G IC B I-D IR E C T IO N A L MOTOR D R IVE R W IT H OP A M P AND TR A N S IS T O R ARRAY E L E C T R IC A L C H A R A C T E R I S T IC S

transistors N3

Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

MSK4203

Abstract: 50 amp H-bridge Mosfet
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 75 VOLT 10 AMP H-BRIDGE PWM MOTOR DRIVER/AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 4203 315 701-6751 FEATURES: 75 Volt, 10 Amp Capability Self-Contained Smart Lowside/Highside Drive Circuitry Internal PWM Generation, Shoot-through Protection

Contextual Info: b 2 4 Tfl27 b3E DDISSIR MITSUBISHI D GT L T T 2 • M I T 3 M IT S U B IS H I BIPOLAR DIGITAL ICs M 54648AL LOGIC BI-DIRECTIONAL MOTOR DRIVER W ITH MOTOR SPEED CONTROL DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 5 4 6 4 8 A L is a sem ico nductor in teg ra te d circuit, c a p ­

VN13

Contextual Info: 310 1 N V / 6 VN13 E– T E L O S – OB VN1304 VN1306 VN1310 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON ID(ON) Order Number / Package BVDGS (max) (min) TO-39 TO-92 40V 8.0Ω 0.5A — VN1304N3 60V 8.0Ω 0.5A VN1306N2

VN10KN3-G

Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

sivn

Abstract: sivn fet vn10k
Contextual Info: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN10K

Abstract: VN0106N3 VN10KN3-G sivn
Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

Contextual Info: Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

Contextual Info: Supertex inc. VP2110 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and

a0124

Contextual Info: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-to-drain diode High input impedance and high gain

Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

Contextual Info: Supertex inc. VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

Contextual Info: Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,