6N17 Search Results

application notes IXGH 6N170

Abstract: 6N170
Contextual Info: Advance Technical Data High Voltage IGBT VCES IC25 VCE sat tfi(typ) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25

Contextual Info: Advance Technical Data IXGQ 6N170AM High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 6 A IC90 TC = 90°C ICM

IXGH 6N170

Abstract: 6N170
Contextual Info: IXGH 6N170 IXGT 6N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90

IC1700

Contextual Info: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V

DS99004

Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous

Contextual Info: Advance Technical Data High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25

Contextual Info: IXGH 6N170 IXGT 6N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90

Contextual Info: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V

6N170A

Contextual Info: Advance Technical Data IXGH 6N170A IXGT 6N170A High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V

IXGH 6N170

Abstract: 6N170 application notes IXGH 6N170 UPS SIEMENS
Contextual Info: High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90

Contextual Info: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V

6N17B

Abstract: 6H17B 6h17b tube 6H175 tube 6N17B 6N17
Contextual Info: 6HI75 A b OHHOH TpHOA Double triode JXbohhoh TpHOA 6H17B npe,o;Ha3HaqeH juin ycnjieiiHH HanpH^eHHH hh3koh qacTOTbi. ZlBOHHbie TpHO^bi 6H17B BbinycKaiOTCH b C Bepx- The 6H17B double triode is designed for ampli­ fication of low-frequency voltage. The 6H17B double triodes are superminiature

50N60

Abstract: 50N100 50n80 40N160 9N160G 50N6
Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

6h2n

Abstract: 6N3P 6N16B 6X6C 6N6P-i 6e5p tube 6N17B 6N5P 6n2p 6N1P
Contextual Info: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH