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IXYS Corporation IXBT6N170 Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXBT6N170		30		1	1 $17.98 10 $12.35 100 $11.54 1000 $10.34 10000 $10.34	Buy Now
Mouser Electronics	IXBT6N170		155			1 $19.84 10 $12.40 100 $12.40 1000 $11.86 10000 $11.86	Buy Now
TTI	IXBT6N170	Tube			300	1 - 10 - 100 - 1000 $11.07 10000 $11.07	Buy Now
Baumer Electric Ag IFRD 06N17A1/L Sensor: inductive
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IFRD 06N17A1/L				1	1 $198.59 10 $188.14 100 $188.14 1000 $188.14 10000 $188.14	Get Quote
Baumer Electric Ag IFRM 06N1701/KS35L Sensor: inductive; 0÷2mm; Overall len: 36mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IFRM 06N1701/KS35L				1	1 $101.62 10 $96.28 100 $96.28 1000 $96.28 10000 $96.28	Get Quote
IXYS Corporation IXGT6N170 Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXGT6N170				1	1 $17.57 10 $13.45 100 $11.33 1000 $11.33 10000 $11.33	Get Quote
Mouser Electronics	IXGT6N170		185			1 $18.99 10 $11.82 100 $11.82 1000 $11.38 10000 $11.38	Buy Now
TTI	IXGT6N170	Tube			300	1 - 10 - 100 - 1000 $10.47 10000 $10.47	Buy Now
Baumer Electric Ag IFRM 06N1701/L Sensor: inductive; 0÷2mm; Overall len: 30mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IFRM 06N1701/L				1	1 $86.44 10 $81.89 100 $81.89 1000 $81.89 10000 $81.89	Get Quote

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6N17 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
application notes IXGH 6N170 Abstract: 6N170 Contextual Info: Advance Technical Data High Voltage IGBT VCES IC25 VCE sat tfi(typ) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	6n170 o-247 o-268 728b1 +1application notes ixgh 6n170	PDF
Contextual Info: Advance Technical Data IXGQ 6N170AM High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 6 A IC90 TC = 90°C ICM	Original	6n170am 50/60hz 728b1	PDF
IXGH 6N170 Abstract: 6N170 Contextual Info: IXGH 6N170 IXGT 6N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90	Original	6n170 o-268 o-247 ixgh 6n170	PDF
IC1700 Contextual Info: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	6n170a o-247 o-268 728b1 +1ic1700	PDF
DS99004 Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous	Original	6n170 o-247 728b1 ds99004 +4smd diode 819 to-268 6n17 transistor 610 smd	PDF
Contextual Info: Advance Technical Data High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	6n170 o-268 o-247 i-247 +1728b1	PDF
Contextual Info: IXGH 6N170 IXGT 6N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90	Original	6n170	PDF
Contextual Info: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	6n170a o-247 o-268 728b1	PDF
6N170A Contextual Info: Advance Technical Data IXGH 6N170A IXGT 6N170A High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	6n170a o-247 728b1	PDF
IXGH 6N170 Abstract: 6N170 application notes IXGH 6N170 UPS SIEMENS Contextual Info: High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90	Original	6n170 solder12 ixgh 6n170 application notes ixgh 6n170 +1ups siemens	PDF
Contextual Info: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	6n170a o-268 o-247 o-247hermal +1728b1	PDF
6N17B Abstract: 6H17B 6h17b tube 6H175 tube 6N17B 6N17 Contextual Info: 6HI75 A b OHHOH TpHOA Double triode JXbohhoh TpHOA 6H17B npe,o;Ha3HaqeH juin ycnjieiiHH HanpH^eHHH hh3koh qacTOTbi. ZlBOHHbie TpHO^bi 6H17B BbinycKaiOTCH b C Bepx- The 6H17B double triode is designed for ampli fication of low-frequency voltage. The 6H17B double triodes are superminiature	OCR Scan	6h175 6h17b harpy30k 6n17b +36h17b tube tube 6n17b 6n17	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9n140g 15n140 20n140 40n140 +89n160g 15n160 20n160 50n60 50n100 50n80 40n160 50n6	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF

6h2n Abstract: 6N3P 6N16B 6X6C 6N6P-i 6e5p tube 6N17B 6N5P 6n2p 6N1P Contextual Info: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH	OCR Scan	ccc70 n03b0jinet 03hak0mhtbc5i r-200 +14bon2000 30z6s 30u6c jio-3720/738 6h2n 6n3p 6n16b 6x6c 6n6p-i 6e5p tube 6n17b 6n5p 6n2p 6n1p	PDF