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Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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DS99004
Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous
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6n170o-247728b1ds99004+4smd diode 819to-2686n17transistor 610 smd
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IXBH6N170
Abstract: IXBT6N170
Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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ixbh6n170ixbt6n170o-247o-268+16n170
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6N170
Abstract: IXBH6N170 IXBT6N170 9632ns
Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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ixbh6n170ixbt6n170o-2476n170+19632ns
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