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    IXBT6N170 Search Results

    IXBT6N170 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBT 6N170
    		IXYS High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Original PDF 112.06KB 2
    IXBT6N170
    		IXYS High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Original PDF 112.06KB 2
    IXBT6N170
    		IXYS High Voltage, High Gain Bipolar MOS Transistor Original PDF 112.07KB 2
    IXBT6N170
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 12A 75W TO268 Original PDF 5
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    IXBT6N170 Price and Stock

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    IXYS Corporation IXBT6N170

    IGBT 1700V 12A TO-268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBT6N170 Tube 300 1
    • 1 $16.79
    • 10 $16.79
    • 100 $10.39
    • 1000 $9.03
    • 10000 $9.03
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    Mouser Electronics IXBT6N170 274
    • 1 $16.79
    • 10 $10.38
    • 100 $10.38
    • 1000 $9.02
    • 10000 $9.02
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    TTI IXBT6N170 Tube 300
    • 1 -
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    • 100 -
    • 1000 $9.03
    • 10000 $9.03
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    TME IXBT6N170 1
    • 1 $9.70
    • 10 $8.14
    • 100 $7.79
    • 1000 $7.79
    • 10000 $7.79
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    Littelfuse Inc IXBT6N170

    Disc Igbt Bimosfet-High Volt To-268Aa/ Tube |Littelfuse IXBT6N170
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBT6N170 Bulk 300
    • 1 -
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    • 100 -
    • 1000 $9.46
    • 10000 $9.46
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    RS IXBT6N170 Bulk 8 Weeks 30
    • 1 -
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    • 100 $13.26
    • 1000 $12.84
    • 10000 $12.84
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    IXBT6N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		IXBH6N170 IXBT6N170 O-247 6N170 PDF

    IXBH6N170

    Abstract: IXBT6N170
    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		IXBH6N170 IXBT6N170 O-247 O-268 6N170 IXBT6N170 PDF

    6N170

    Abstract: IXBH6N170 IXBT6N170 9632ns
    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		IXBH6N170 IXBT6N170 O-247 6N170 IXBH6N170 IXBT6N170 9632ns PDF