6J MARKING Search Results

transistor

Abstract: SOT89 MARKING 6J sot-89 marking transistor 6j SOT89 transistor marking KIA7033AF sot-89 GRADE MARK sot-89 mark 8
Contextual Info: SEMICONDUCTOR KIA7033AF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 6J KIA7033AF * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

Contextual Info: :3 7: 32 AM COMET TETRA Register Descriptions Document Released ,0 6J ul y, 20 06 03 PM4359 Th ur sd ay COMET TETRA of Pa rtm in er In co n FOUR-CHANNEL COMBINED T1/J1/E1 TRANSCEIVER/FRAMER Released Issue No. 2: June, 2006 Do wn lo ad ed by Co nt e nt T ea

amphenol 9-6800-5

Abstract: amphenol 77820 bendix amphenol 77820 amphenol 9-6800 10-597061 gold palladium 9680
Contextual Info: REVISIONS P 6J N A L M 2 PLCS D 5 0 I6 DATE APPROVED INITIAL RELEASE NUM: f%4. c~ v. 7! i - NCiF 3 ¿4- Oi MO F R t m f/''LI K 6-3 2 PLCS t sl L- I I J DESCRIPTION ZONE LTR D II II II II •COLOR BAND #3 VIEW AT A SCALE COLOR BAND #2 10/ COLOR BAND # H .003

N-Channel JFET FETs

Abstract: P-Channel RF Amplifier jfets MMBF5457LT1 MMBF5484LT1
Contextual Info: SOT-23 TRANSISTORS continued Unipolar (Field Effect) Transistors (JFETs) RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate NF Device Y»s @ V ds Marking dB Typ

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

marking 6k sot-23 package

Abstract: 6K SOT23 marking codes transistors sot 6k CMPF4393 CMPF4391 CMPF4392 marking 6J 6j marking 6k marking Marking 6k
Contextual Info: Central CMPF4391 CMPF4392 CMPF4393 TM Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF4391 series types are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

6K MARKING CODE

Abstract: marking 6k sot-23 package CMPF4391 CMPF4392 CMPF4393 6K SOT23 marking codes JFET transistors sot-23 6K marking SOT23 6J MARKING
Contextual Info: CMPF4391 CMPF4392 CMPF4393 SURFACE MOUNT N-CHANNEL SILICON JFET SOT-23 CASE MAXIMUM RATINGS: TA=25°C Drain-Gate Voltage Gate-Source Voltage Drain-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance

Contextual Info: CMPF4391 CMPF4392 CMPF4393 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT N-CHANNEL SILICON JFET SOT-23 CASE MAXIMUM RATINGS: TA=25°C Drain-Gate Voltage Gate-Source Voltage Drain-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature

marking 321 sot-23

Contextual Info: Central CMPF4391 CMPF4392 CMPF4393 Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF4391 series types are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

LDTA143EWT1G

Abstract: transistor 6j PNP marking 6J
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143EWT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

dz2j036

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J036 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature

SSMini2-F5-B

Abstract: dz2s036
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2S036 (Tentative) Silicon epitaxial planar type For constant voltage • Package  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit IFRM 200 mA PT 150 mW Junction temperature

Contextual Info: MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

DZ2J036

Abstract: DZ2J ZKE00080BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J036 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type • Features  Package  Excellent rising characteristics of zener current Iz

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J036 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type • Features  Package  Excellent rising characteristics of zener current Iz

419B-02

Abstract: SMF05CT1 marking 6J
Contextual Info: SMF05CT1 SC−88 Transient Voltage Suppressor Array for ESD Protection This monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2S036 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type DZ2J036 in SSMini2 type package • Features  Package  Excellent rising characteristics of zener current Iz

sot23 6 device Marking

Abstract: marking 6J
Contextual Info: MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

DTA114TET1

Abstract: DTA115EET1
Contextual Info: DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: Doc No. TT4-EA-11775 Revision. 3 Product Standards Zener Diode DZ2S0360L DZ2S0360L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J036 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11541 Revision. 4 Product Standards Zener Diode DZ2J0360L DZ2J0360L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

IEC-60073

Abstract: welding machine wiring diagram dc welding machine circuit diagram IEC60073 welding machine wiring diagram ND 300 diode 4j ac welding machine circuit diagram welding machine diagram ACEA3222 DIA18
Contextual Info: NSseries.fm Seite 7 Donnerstag, 4. Mai 2006 5:18 17 NS Series ACEA, ACBA, ACSA, ACKA Illuminated pushbutton, Indicators, Non-illuminated pushbutton, Selector, Key selector switches Full lineup to meet varied market needs Integrated 30 mm short body NS Series

marking 6k sot-23 package

Abstract: MARKING RK marking RK sot MMBF4392
Contextual Info: MMBF4391LT1, MMBF4392LT1, MMBF4393LT1 JFET Switching Transistors N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG

BF546

Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
Contextual Info: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)