68BALL Search Results

NT5TU64M16

Abstract: NT5TU128M8BJ-3C NT5TU64M16BM nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks NT5TU256M4BJ
Contextual Info: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency 200 266 333 400

EDE1104AASE

Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Intel Stacked CSP

Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
Contextual Info: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology

K4T1G084QA-ZCE6

Abstract: K4T1G164QA-ZCE6 K4T1G084QA-ZCCC DDR2 Mechanical Dimensions K4T1G044QA-ZCCC K4T1G044QA-ZCD5 K4T1G044QA-ZCE6 K4T1G084QA-ZCE K4T1G164QA-ZCD5 sdram ddr2
Contextual Info: 1G A-die DDR2 SDRAM DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

sandisk micro sd

Abstract: digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit
Contextual Info: Atmel Corporation Atmel Operations Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 (408) 487-2600 Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1 (408) 441-0311 FAX 1 (408) 436-4314 Regional Headquarters Microcontrollers

K4T2G084QA

Abstract: K4T2G084QA-HCD5
Contextual Info: K4T2G044QA K4T2G084QA 2Gb DDR2 SDRAM 2Gb A-die DDR2 SDRAM Specification 68FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K4T2G064QA

Contextual Info: 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb A-die 72-bit ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: 2GB, 4GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb M-die 72-bit ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K4T1G044QA K4T1G084QA K4T1G164QA 1Gb DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Revision 1.3 October 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: 1Gb M-die DDR2 SDRAM DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.1 January 2005 Page 1 of 29 Rev.1.1 Jan. 2005 1Gb M-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension

Contextual Info: 240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb 1st ver. This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb 1st ver. based DDR2 Unbuffered DIMM

nanya 8gb DDR3

Abstract: nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15
Contextual Info: NANYA Module Part Numbering Guide NT 4GT T 64 U 8 H NANYA Technology Module Density Product Family T=DDR2 SDRAM Data Width 64=x64 U N AC Speed 256=256MB 512=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16T=16GB Stacking 32T=32GB (Stacking) D=DDR SDRAM C=DDR3 SDRAM

Contextual Info: HY5PS1G431 L F HY5PS1G831(L)F 1Gb DDR2 SDRAM HY5PS1G431(L)F HY5PS1G831(L)F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS1G431 L F HY5PS1G831(L)F 1Gb DDR2 SDRAM HY5PS1G431(L)F HY5PS1G831(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

K4T2G084QA

Abstract: DDR2-667 DDR2-800 K4T2G044QA
Contextual Info: K4T2G044QA K4T2G084QA 2Gb DDR2 SDRAM 2Gb A-die DDR2 SDRAM Specification 68FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4T1G164QF

Abstract: 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC
Contextual Info: Apr. 2010 DDR2 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

K4T2G084QA

Abstract: K4T2G084QA-HCD5 k4t2g084 k4t2g084qa-hcf7 K4T2G084QA-HCE7 K4T2G084Q K4T2G084QA-HCE6 K4T2G044QA-HCE6 K4T2G044QA DDR2-667
Contextual Info: K4T2G044QA K4T2G084QA 2Gb DDR2 SDRAM 2Gb A-die DDR2 SDRAM Specification 68FBGA with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

DDR2-400

Abstract: DDR2-533 JESD51-2 K4T1G044QM-ZCCC K4T1G044QM-ZCD5 1G DDR2 128 x 8
Contextual Info: DDR2 SDRAM 1G M-die DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.4 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

HYMP351R72MP4-E3

Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb 1st ver. This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1 Gb 1st ver. based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25"

NT5TU64M16BM

Abstract: NT5TU128M8BJ
Contextual Info: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM - Preliminary Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency

K4T2G264QA

Abstract: RESISTOR 820 OHM
Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb A-die 72-bit ECC 68FBGA & 56FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency 200 266 333 400