682 FET Search Results

TGA1152-EPU

Abstract: TGA1152-SCC capacitors coefficient of thermal expansion 39dBm
Contextual Info: Product Data Sheet March 19, 2001 13.75 - 15 GHz 2 Watt Power Amplifier TGA1152-SCC Key Features • • • • • • 0.5 um pHEMT Technology 34 dB Nominal Gain 33 dBm Nominal Pout @ Pin = 3 dBm OTOI 39dBm Typical Bias 7V @ 682 mA Chip Dimensions 1.390mm x 2.495mm

2sk682

Abstract: k682 2SK683
Contextual Info: blE D 44*ib2[]S DG13121 h31 IHIT4 2SK682,2SK683 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES r • Low On-Resistance • • High Speed Switching Low Drive Current • • No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter

2SK683

Abstract: 2SK682 2SK68 DIODE 720
Contextual Info: blE D 44^b20S 00131E1 L3L IHITM 2SK682,2SK683 SILICO N N -C H A N N E L MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter

SMR 40000

Abstract: SMR 60000 transistor pcr 606 j ic HD6433037F SCR IC CHIP block diagram induction heating h8 family Nippon capacitors PCR 606 J renesas tioca pwm
Contextual Info: REJ09B0353-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/3039 Group, H8/3039F-ZTAT

SMR 40000

Abstract: smr 40000 c ac din hfe nv SCHEMATIC circuit scr oscillator HD6433039F HD6433039TE HD64F3039F HD64F3039TE HD64F3039VF HD64F3039VTE
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BF 998 marking code mow

Abstract: HD64F7047 MB26 philips motor mb12 MB418 MB428 bosch 0 281 002 667 hall circuit transistor bosch 0 281 002 667 HD6437049 HD6437148
Contextual Info: SH7046 Series SH7046 HD64F7046, HD6437148 SH7047 HD64F7047, HD6437049 Hardware Manual ADE-602-237 Rev. 1.0 3/8/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

MB418

Abstract: 18MB150 Hitachi DSAUTAZ006 TCFG Series mb1517
Contextual Info: SH7046 Series SH7046 HD64F7046, HD6437148 SH7047 HD64F7047, HD6437049 Hardware Manual ADE-602-237 Rev. 1.0 3/8/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

stk 681

Abstract: stk 453 11-903 3105b 99-922.7
Contextual Info: Befehls- und Meldegeräte 99 99 Befehls- und Meldegeräte Inhaltsübersicht Baureihe 99 Beschreibung Seite 673 Geräteaufbau Seite 674 Sortiment - Geräte Standard Einbau - Zubehör / Einzelteile 672 03.2000 Seite 675 Seite 680 Technische Daten Seite 684 Massbilder / Lochbilder / Bauteilelayouts

Contextual Info: FLU17XM L - B an d M edium & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature

fsx51x

Contextual Info: FSX51X GaAs FET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current IDSS Condition Min. Limit Typ. Max. Unit Vos =3V, VGS =0V 30 60 120 mA Transconductance gm V d S = 3V, Id s =30mA 18 25 - mS Pinch-off Voltage

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

GaAs FET HEMT Chips

Abstract: 1756 N2 C-Band Power GaAs FET HEMT Chips 1060 fet FLC157XP 682 FET
Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for

Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for

20GHz

Abstract: FLU17XM
Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

Contextual Info: S M ELECTRONICS Samsung Microwave Semiconductor F - 0 3 1 1 0 G a in O p t Ì lT I Ì Z G C l GaAs FET 2-14 GHz Description Features The SM F-03110-200 is a packaged version of the SMF03100-200. The chip is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain

Contextual Info: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

K638

Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for

GaAs FET HEMT Chips

Abstract: 1756 N2 FLC157XP
Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for

FLU17XM

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P-|C|g=32.5dBnn Typ. • High Gain: G-|C|g=13.5dB (Typ.) • High PAE: r iadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

FLC157XP

Abstract: C-Band Power GaAs FET HEMT Chips fujitsu hemt fujitsu gaas fet
Contextual Info: FLC157XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 31.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability DESCRIPTION

FLU17XM

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the