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    678PF Price and Stock

    POWELL ELECTRONICS

    POWELL ELECTRONICS CIR06F-36-78P-F80

    CIR CABLE ASSY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CIR06F-36-78P-F80 Bulk 26 1
    • 1 $711.94
    • 10 $711.94
    • 100 $697.70
    • 1000 $656.67
    • 10000 $656.67
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    POWELL ELECTRONICS CIR02R-36-78P-F80

    CONN RCPT MALE 14P SILVER CRIMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CIR02R-36-78P-F80 Bulk 26 1
    • 1 $392.84
    • 10 $392.84
    • 100 $384.98
    • 1000 $369.74
    • 10000 $362.34
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    POWELL ELECTRONICS CIR01A-36-78P-F80

    CIR CABLE ASSY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CIR01A-36-78P-F80 Bulk 26 1
    • 1 $462.30
    • 10 $462.30
    • 100 $453.05
    • 1000 $435.11
    • 10000 $426.41
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    POWELL ELECTRONICS CIR020R-36-78P-F80

    CIR020R-36-78P-F80
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CIR020R-36-78P-F80 Bulk 26 1
    • 1 $384.74
    • 10 $384.74
    • 100 $377.04
    • 1000 $362.11
    • 10000 $354.87
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    POWELL ELECTRONICS CIRG06SB-36-78P-F80

    CIRG CABLE ASSY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CIRG06SB-36-78P-F80 Bulk 26 1
    • 1 $925.95
    • 10 $925.95
    • 100 $907.43
    • 1000 $854.07
    • 10000 $854.07
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    Find more 678PF price and stock on Findchips.com

    678PF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P-Channel FET 100v to92

    Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2635 263pF TP2635 DSFP-TP2635 A102607 P-Channel FET 100v to92 PDF

    P2640

    Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel PDF

    Contextual Info: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2635/TP2640 DSFP-TP2635 TP2640 C032807 PDF

    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2640 DSFP-TP2640 A091608 PDF

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND PDF

    Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2635 DSFP-TP2635 A091508 PDF

    Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original     		TP2635 DSFP-TP2635 A062209 PDF

    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2640 DSFP-TP2640 A042709 PDF

    a1026

    Abstract: TP2640N3-G
    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2640 MS-012, TP2640 DSFP-TP2640 A102607 a1026 TP2640N3-G PDF

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND PDF

    TP2635

    Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
    Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 TP2635ND -400V 15Ω -2.0V


    Original     		TP2635 TP2640 -350V TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND 678pF TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND PDF

    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original     		TP2640 DSFP-TP2640 A062609 PDF

    P-Channel FET 100v to92

    Abstract: FAST DMOS FET Switches p-CHANNEL 125OC TP2635
    Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2635 DSFP-TP2635 A062209 P-Channel FET 100v to92 FAST DMOS FET Switches p-CHANNEL 125OC TP2635 PDF