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    263PF Price and Stock

    Rubycon Corporation

    Rubycon Corporation 63PFV10M6.3X6.1

    Aluminum Organic Polymer Capacitors 63VDC 10uF 20% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 63PFV10M6.3X6.1 5,025
    • 1 $1.96
    • 10 $1.35
    • 100 $1.01
    • 1000 $0.80
    • 10000 $0.78
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    Rubycon Corporation 63PFV56M10X10.5

    Aluminum Organic Polymer Capacitors 63VDC 56uF 20% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 63PFV56M10X10.5 3,877
    • 1 $2.93
    • 10 $1.95
    • 100 $1.54
    • 1000 $1.30
    • 10000 $1.30
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    Rubycon Corporation 63PFV33M8X10.5

    Aluminum Organic Polymer Capacitors 63VDC 33uF 20% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 63PFV33M8X10.5 1,457
    • 1 $2.29
    • 10 $1.51
    • 100 $1.08
    • 1000 $0.90
    • 10000 $0.90
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    Rubycon Corporation 63PFV22M6.3X8

    Aluminum Organic Polymer Capacitors 63VDC 22uF 20% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 63PFV22M6.3X8 24
    • 1 $2.10
    • 10 $1.48
    • 100 $1.11
    • 1000 $0.88
    • 10000 $0.88
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    Rubycon Corporation 63PFV10MVB6.3X6.1

    Aluminum Organic Polymer Capacitors HIGH TEMP HYBRID CAPACITOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 63PFV10MVB6.3X6.1
    • 1 $1.99
    • 10 $1.37
    • 100 $1.02
    • 1000 $0.81
    • 10000 $0.81
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    Find more 263PF price and stock on Findchips.com

    263PF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P-Channel FET 100v to92

    Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		tp2635263pfdsfp-tp2635a102607+1p-channel fet 100v to92 PDF

    P2640

    Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		tp2640dsfp-tp2640a062609p2640+4125octp2640ndtp2640lg-gto92 fet p channel PDF

    Contextual Info: Supertex inc. TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown


    Original     		tp2635dsfp-tp2635b081613 PDF

    Contextual Info: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TP2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown


    Original     		tp2640dsfp-tp2640b081613 PDF

    Contextual Info: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		tp2635/tp2640dsfp-tp2635tp2640c032807 PDF

    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		tp2640dsfp-tp2640a091608 PDF

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		tp2635tp2640-350vtp2635n3+6-400vtp2640lgtp2640n3tp2640nd678pf263pf PDF

    Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		tp2635dsfp-tp2635a091508 PDF

    Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original     		tp2635dsfp-tp2635a062209 PDF

    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		tp2640dsfp-tp2640a042709 PDF

    a1026

    Abstract: TP2640N3-G
    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		tp2640ms-012dsfp-tp2640a102607+2a1026tp2640n3-g PDF

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		tp2635tp2640-350vtp2635n3+6-400vtp2640lgtp2640n3tp2640nd678pf263pf PDF

    TP2635

    Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
    Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 TP2635ND -400V 15Ω -2.0V


    Original     		tp2635tp2640-350vtp2635n3+6tp2635nd-400vtp2640lgtp2640n3tp2640nd678pf PDF

    Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original     		tp2640dsfp-tp2640a062609 PDF