640MA Search Results

CBC2012T2R2M

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T2R2M Features Item Summary 2.2 H(±20%), 530mA, 640mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

G138K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 2 640mA Description The G138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

GS138K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/10/11 REVISED DATE : GS138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 2 640mA Description The GS138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

G3018K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/11 REVISED DATE : G3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 8 640mA Description The G3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

G111K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G 111 K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 55V 2 640mA Description The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

G301K

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : G301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 1 640mA Description The G301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

Contextual Info: SSM7002KGEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 60V R DS ON 2Ω ID 640mA DESCRIPTION The SSM7002KGEN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

Contextual Info: Spec Sheet INDUCTORS High Reliability Application Wire-wound Chip Inductors for Industrial / Automotive Comfort and Safety Applications (CB series) CBC2012T2R2MV Features Item Summary 2.2 H(±20%), 530mA, 640mA, 0805 Lifecycle Stage Mass Production AEC-Q200 qualified

B2A16LY

Contextual Info: CRO ABSOLUTE M A X IM U M R A TIN G S Forward Current Reverse Voltage Operating Temperature Storage Temperature 640mA 10V -20 to +70°C -30 to +80°C VR Topr Tstg Ta=25°C SYMBOL MIN TYP f o r w a r d Voltage VF 3.6 4.0 Reverse Current IR Peak Wavelength

SSF3018K

Abstract: SSF3018
Contextual Info: SSF3018K 640mA, 30V,RDS ON 8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The SSF3018K utilized advanced oricessing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

G2N7002K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B G2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 60V 2 640mA Description The G2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

GS2N7002K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/09/19 REVISED DATE : GS2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 60V 2 640mA Description The GS2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

GT6301K

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GT6301K BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 1 640mA Description The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS5012T150MMGF Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS5012T150MMGF Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

AP2N7002K

Contextual Info: AP2N7002K Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS 60V RDS ON 2Ω ID ▼ RoHS Compliant 640mA S SOT-23 Description

SST6301

Contextual Info: SST6301K 640mA, 30V,RDS ON 1.0Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST6301K utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.

FI-XB30SL-HF10

Abstract: LQ170E1LG11 FI-X30M MDF76 FI-X30H MDF76G-30P-1SD 6V DC-AC Fluorescent lamp lcd tv lvds cable pin voltages toshiba corss LD-166
Contextual Info: RECORDS OF REVISION LQ170E1LG11 SPEC No. DATE No. LD-16111 June 28. 2004 LD-16111A July 06.2004 SUMMARY REVISED NOTE PAGE 1st Issue △1 8 2nd Issue Added SPEC. 6. Electrical Characteristics 6-1. TFT-LCD panel driving Rush current TYP=640mA 【NOTE4】 【Note4】The rush current is measured at this

SSF138K

Contextual Info: SSF138K 640mA, 50V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The SSF138K utilized advanced oricessing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

SMG301K

Contextual Info: SMG301K 640mA, 30V,RDS ON 1Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free Description SC-59 The SMG301K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and cost-effectiveness

FET MARKING QG

Abstract: SMG111K marking 111E
Contextual Info: SMG111K 640mA, 55V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description A The SMG111K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and cost-effectiveness device. The SMG111K is universally used for

transistor 702E

Abstract: 702E smg702k 702e mosfet marking 702E
Contextual Info: SMG702K 640mA, 60V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A L Description SC-59 The SMG702K utilized advanced processing techniques to achieve the lowest possible on-resistance,

NRS5012T150MMGF

Abstract: NRS5012T150M
Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS5012T150MMGF Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

GTT6301K

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GTT6301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 1 640mA Description The GTT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely