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Catalog Datasheet	Type	Document Tags	PDF
FET MARKING QG Abstract: SMG111K marking 111E Contextual Info: SMG111K 640mA, 55V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description A The SMG111K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and cost-effectiveness device. The SMG111K is universally used for	Original	SMG111K 640mA, SMG111K SC-59 01-Jun-2002 FET MARKING QG marking 111E	PDF

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FET MARKING QG

Abstract: SMG111K marking 111E
Contextual Info: SMG111K 640mA, 55V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description A The SMG111K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and cost-effectiveness device. The SMG111K is universally used for

Original

SMG111K 640mA, SMG111K SC-59 01-Jun-2002 FET MARKING QG marking 111E

PDF