6264, RAM Search Results

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

Contextual Info: H Y 6264 A-I S e r ie s •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION Tiie HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

MB8464-15L

Abstract: MB8464-15 MB8464-12L m88464a-10ll-x MCM6264-20 motorola 6264 ram M88464A MCM60L64 mcm6164 MB8464A-10L
Contextual Info: - 90 64 K X m % ít * OC -Í CMOS -y -f .V ÿ S t a t i c $ RAM 8 192 tí x % 8) 28PIN TAAC max (ns) TCAC nax (ns) TOE nax (ns) TOH min (ns) TOD max (ns) TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TUR max (ns) V D D or V C C I DD (V) (mA) 6264 X t) [*typ]

Contextual Info: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription

NVR8

Abstract: GREENWICH INSTRUMENTS
Contextual Info: GREENWICH 8K X 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • NVR8 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM No limit to number of programming cycles Fits standard 28-pin socket

STATIC RAM 6264

Abstract: 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L UPD4464G-15
Contextual Info: 94 6 4 K X m & ít CC> UPD4368CRAA-20 NEC uP04464G-12 NEC UPD4464G-12L TAAC « NEC 0— 70 TCAC max ns nax (ns) 20 20 120 120 TOE max (ns) CMOS 4 -, + TOH min (ns) y TOD nax (ns) y TWP min (ns) S t a t i c It TDS min (ns) TDH min (ns) TWD min (ns) TWR sa>:

Contextual Info: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • • • GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM

AS6C6264A

Abstract: 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800
Contextual Info: MARCH 2009 AS6C6264A 8K X 8 BIT LOW POWER CMOS SRAM FEATURES DESCRIPTION •   The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention

CXK5864PN-15L

Abstract: CXK5864PN-12L CXK5864PN-12 CXK5864PN-15 CXK5863P-35 CXK5864-M-12 sony s 120-a CXK5864AM-10L CXK5864M-12L CXK5864P-12L
Contextual Info: - 85 6 4 K 'i X m £ it £ CMOS •/ ÍSSEISB! °C> TM C max (ns TOH TCAC max (ns) TOE max (ns) min (ns) f- > TOD max (ns) i/ S t a t i c RAM ( 8 1 9 2 x 8) » % TWF min (ns) TfS min (ns) TDH min (ns) TWD min (ns) TWft max (ns) V r D or V C C <V) 2 8 P I N

ic 6264

Abstract: M68HC11evm MC68HC11E1FN 6264 RAM eeprom copy schematic 27128 MC68HC811A2 ic 74hc245 MCM6064P eeprom programmer schematic 27128 ram 6264
Contextual Info: Freescale Semiconductor, Inc. M68HC11EVM/AD8 Freescale Semiconductor, Inc. February 1994 M68HC11EVM EVALUATION MODULE USER’S MANUAL Information contained in this document applies to REVision G M68HC11EVM Evaluation Modules, serial numbers 1000 through 9999.

Contextual Info: ICS5341 GENDAC Integrated Circuit Systems, Inc. Advance Information 16-Bit Integrated Clock-LUT-DAC General Description Features The ICS5341 GENDAC is a combination of dual program­ mable clock generators, a 256 x 18-bit RAM, and a triple 8-bit video DAC. The GENDAC supports 8-bit pseudo

MB81C78A-35

Abstract: LH5164-10 MB81C78A MB81C78-45 LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12
Contextual Info: CMOS 6 4 K m £ tt £ ¡á£ÍEH OC X TAAC •ax ns) TCAC (ns) ■f y ? S t a t i c RAM ( 81 9 2 x 8 ) ft ft TOE ■ax (ns) TOH min (ns) TOD max (ns) TWP min (ns.) TDS IE (ns) TDH min (ns) TWD min (ns) TWR max (ns) V I or V C C (V) 2 8 P I N IDO max (mA)

FCB61C65-70

Abstract: HM6264ALP-10 HM6264ALP-12 FCB61C65-45 DS1225AD-2G FCB61C65L DPS9264-120 DPS9264-150 DS1225Y DS1225AB-20
Contextual Info: - 86 - m £ ít % CC TAAC max ns) TCAC max (ns) 6 4 K CMOS X + A TOE max (ns) TOH min (ns) V TOD (ns) '/ S t a t i c RAM (81 9 2 X 8 ) Í# f t TiP min (ns) TDS min (ns) m TDH min (ns) TWD min (ns) TWR ma): (ns) V D D or V C C (V) 2 8 P I N ÎDD max (mA)

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior

6264 RAM

Abstract: 74CT573 D25 connector MAX233 6264* ram IC,12 BIT BINARY COUNTER ROM 6264 6264 8051 external RAM ic 6264 IC380
Contextual Info: 19-0012: R ev 0. 3/02 EVALUATION KIT A I/ J X IA 1 M A X155 Evaluation K it _ Ordering Inform ation PART TEMP. RANGE MAXt55EVKfT 0"C to +70'C BOARD TYPE Plastic DIP through Hole E V K it The input channels can be configured in a variety of combinations of single-ended/differential and unipolar/bi­

GR12881

Abstract: GR281 TT B6 C 110 N 12
Contextual Info: GREENWICH INSTRUMENTS USA 21E D • 4124774 0000052 3 ■ B IS GREENWICH ÜIHSTBUMEHTSUSA_ 3401 MONROE RD • CHARLOTTE. NC 28205 • 704 376-1021 • FAX 335-8707 • 1-800-476-4070 NON-VOLATILE MEMORY •* LOW PROFILE •* LOW POWER

STATIC RAM 6264

Abstract: 6264 static RAM 6264 RAM ram 6264 6264 CY6264 OC821 62645
Contextual Info: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state drivers. Both devices have an automatic power-down feature (CEi), reducing the power consumption by over 70% when de­ selected. The CY6264 is packaged in a

mk6264

Contextual Info: SGS-THOMSON IM MK6264 N,S 70/120 MK6264L(N,S)70/120 MK6264U(N,S)70/120 64K (8K x 8-BIT) CMOS STATIC RAM FEATURES □ 70 And 120 ns Address Access Time □ Equal Access And Cycle Times □ Static Operation * No Clocks Or Timing Strobes Required □ Low Vcc Data Retention 2 Volts

TC5565PL-15L

Abstract: TC5588P TC5565PL15 NEC150 tc5565pl-15 tc5565pl UM6264-10L UM6264-12 NEC 200 V62C64-10
Contextual Info: - 6 4 K 'f a m f± £ % CC TAAC TCAC T O E max max max ns) (ns) (ns) TC5565PL-151 TOSHIBA 0— 70 150 TC5588P/J-2Û TC5588P/J-25 TOSHIBA TOSHIBA 20 25 20 25 TC5588P/J-35 TMS6264L-12 TMS6264L-15 TOSHIBA 0— 70 0 —'70 0— 70 35 35 TI TI 0— 70 0— 70

FZH115B

Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Contextual Info: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P

cdm 316

Abstract: CDM6264 CDM6264-3 ca 3161 e IC CDM6264-2 M6264
Contextual Info: HARRIS SEMICOND SECTOR 37E P Random-Access Memories RAM s . H M3G2271 0023b45 1 Bi HAS - T-46-23-12 CDM6264 NC-AI2— AT — A6 — AS-A4-A3 — A2-A1 -AO— 1/01 — 1/02 — 1703-vss— r 2 3 4 5 6 7 8 9 10 II 12 IS 14

IRFP140R

Abstract: IRFP142R IRFP143R CI 6264 IRFP142 IRFP141R f 6267 9l 15a
Contextual Info: Rugged Power M _ IRFP140R, IRFP141R, IRFP142R, IRFP143R File Num ber 2086 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0 .0 8 5 0 and 0.110 N-CHANNEL ENHANCEMENT MODE

6264alp

Abstract: 6264ALSP-10
Contextual Info: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •