6164 RAM Search Results

Contextual Info: ECX-6164-25.000M TR RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6164 -25.000M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel

Contextual Info: ECX-6164-25.000M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6164 -25.000M Series Ecliptek Custom Crystal Nominal Frequency 25.000MHz ELECTRICAL SPECIFICATIONS

transistor BU 102S

Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
Contextual Info: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

4464 ram

Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Contextual Info: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,

Contextual Info: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple­ mentary MOS CMOS technology. It is designed for use in

2114 Ram pinout 18

Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X
Contextual Info: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in

memory ic 2114

Abstract: 5114E
Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple­ mentary MOS CMOS technology. It is designed for use in

VDR 20-100

Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Contextual Info: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs

2114 Ram pinout 18

Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Contextual Info: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in

Contextual Info: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG X 4 X 4 BANKS MT46V16M8 – 4 MEG X 8 X 4 BANKS MT46V8M16 – 2 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

Contextual Info: 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 MEG X 4 X 4 BANKS MT46V64M8 – 16 MEG X 8 X 4 BANKS MT46V32M16 – 8 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

DDR400

Abstract: MT46V128M4 MT46V32M16 MT46V64M8
Contextual Info: 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 MEG X 4 X 4 BANKS MT46V64M8 – 16 MEG X 8 X 4 BANKS MT46V32M16 – 8 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

Contextual Info: UPD75P036GC-AB8 1/3 IL08 * C-MOS 4-BIT SINGLE CHIP MICROCOMPUTER WITH ONE TIME PROM AGND 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 -TOP VIEW- 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 GND AV DD (+2.7 to +6.0V)

Contextual Info: H D 4 4 6 7 8 4-Bit Single Chip Micro computer D escription The HD404678 is a 4-bit single-chip HMCS400-series microcom­ puter for telephone applications which is designed to increase program productivity and incorporates a high-precision dual tone multi-frequency DTMF receiver that is especially suitable for an­

Contextual Info: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG x 4 x 4 BANKS MT46V16M8 – 4 MEG x 8 x 4 BANKS MT46V8M16 – 2 MEG x 16 x 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

74LS471

Abstract: ram 6164 6164 ram 6164 ram memory 6164 memory sram 6164 sram 6164 datasheet 6164 sram cd 74373 PAL16L8B
Contextual Info: National Semiconductor System Brief 108 August 1990 TL F 10858 – 2 SYSTEM DESCRIPTION Local Area Networks have emerged as a widely accepted practical method for connecting personal computers printers and workstations together to form workgroups and corporate networks Ethernet the IEEE 802 3 standard has

Contextual Info: UPD75048GC-508-AB8 1/3 IL08 * C-MOS 4-BIT SINGLE CHIP MICROCOMPUTER WITH MASK ROM AND EEPROM AGND 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 -TOP VIEW- 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 GND

Contextual Info: HM-65162/883 & W A « 2K x 8 Asynchronous CMOS St3tÌC RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

hm 6164

Abstract: 65162 hm165162 harris HM1-65162 equivalent
Contextual Info: 33 HM-65162/883 2K x 8 Asynchronous CM OS S tatic RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

404678H

Contextual Info: HD404678 Series 4-Bit Single-Chip Microcomputer Built-in DTMF Receiver Description The H D 404678 Series is a 4-bit single-chip H M CS400 series microcomputer for telephone applications designed to increase program produc­ tivity. It features a high-precision dual-tone m ulti­

d424100

Abstract: 83IH-5695B
Contextual Info: f/PD424100 4,194,304 X 1-Bit Dynamic CMOS RAM W Mid W NEC Electronics Inc. D escription Pin C o n fig uratio n s T h e ¡j P D424100 is a fast-page dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced polycide