60S5 Search Results

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

20n60s5

Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
Contextual Info: SIEMENS 60S5 60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances

DIODE JS.9 smd

Contextual Info: SIEMENS 60S5 60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

MB345

Abstract: MB323 MB317 ES1303 MX4115 MB313 B338 914f MX3120 MB339
Contextual Info: RECTIFIER and S IG N A L S E L E C T IO N GUIDE Avg. D C Output A .5 A Package Style Reverse Ree. Time 4-5 nsec 50-100 nsec 1.0 A A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec M B207 MB341 MB313 M B314 MB342 M B316

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

Contextual Info: SERIES M ic r o j s e m i C o r p . f The úKxíe experts SCOTTSDALE, AZ F or m ore m fom iation call: 602 941-6300 DESCRIPTION/FEATURES • ECONOMICAL 6 AMP Iq MOLDED DEVICE OFFERS CAPABILITY OF STUDMOUNTED RECTIFIERS • 400 AMPS SURGE PROVIDES HIGH IN-RUSH CURRENT CAPABILITY

LH28F160S5T-L70A

Abstract: LH28F160SST-L70A IN914F LH28F160
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group 60S5T-L70A Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16K55) Spec No.: EL104104 Issue Date: April 17, 1998 SHARP LHF16K55 l Handle this document carefully for it contains material protected by international copyright

LH28F160S5NS-L70

Abstract: LHF16KA4
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group 60S5NS-L70 Flash Memory 16M 2MB x 8/1MB × 16 (Model No.: LHF16KA4) Spec No.: EL128040 Issue Date: August 22, 2000 SHARP . - LHF16KA4 l Handle this document carefully for it contains material protected by international copyright

20n60s5

Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751
Contextual Info: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘

DC60MP

Abstract: DC60P DC60S-3 DC60S-5 blocking diode 20 amp 1200 volt
Contextual Info: Y o u r O p to 22 a d v a n ta g e is y e t a n o th e r in d u stry first; p h o to -iso la te d D C s w itc h in g ▲4000 voft photo­ SSR s. T h e s e p r o d u c ts ha ve th e sa m e highp e rfo rm a n ce d e s ig n a n d c o m p o n e n ts as A TTL compatible

1N914F

Abstract: 1N6542 DSR3200 1N5189 MC8936 MX4115 MB347 DSR5200 MB344 MX3120
Contextual Info: RECTIFIER and SIGNAL SELECTION GUIDE A v g . F o r w a r d R e c t ifie d C u r r e n t 0o P a c k a g e S ty le R e v e rs e R e e . T im e 4-5 nsec 50-100 nsec -5A 1.0 A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec

HALL 95A

Abstract: diode 60S05 95a hall ZD 103 ma 60S05 60S8
Contextual Info: 60S SER IES Micro/semi Corp. f The diode e xp e ns SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 941-6300 DESCRIPTION/FEATURES • ECONOMICAL 6 AMP Iq MOLDED DEVICE OFFERS CAPABILITY OF STUDMOUNTED RECTIFIERS • 400 AMPS SURGE PROVIDES HIGH

02N60S5

Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Contextual Info: SIEMENS 60S5 60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA

BYX71-600

Abstract: BYX71-350 philips BYX71-600 BY208 BYX71 MDA2501 Solitron J775-2 30S8 BY198 GI DL005
Contextual Info: RECTRON SEMICONDUCTOR INDUSTRIAL Part No. 40266 40267 1.5KE10 1.5KE10 1.5KE10 1.5KE100 1.5KE100 1.5KE100 1.5KE100A 1.5KE100A 1.5KE100A 1.5KE10A 1.5KE10A 1.5KE10A 1.5KE11 1.5KE11 1.5KE11 1.5KE110 1.5KE110 1.5KE110 1.5KE110A 1.5KE110A 1.5KE110A 1.5KE11A 1.5KE11A

LH28F160S5NS-L70

Abstract: LHF16KA4
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group 60S5NS-L70 Flash Memory 16M 2MB x 8/1MB × 16 (Model No.: LHF16KA4) Spec No.: EL128040 Issue Date: August 22, 2000 SHARP . - LHF16KA4 l Handle this document carefully for it contains material protected by international copyright

LN2576

Abstract: str 6626 do8m DS22-08A 10M80 DS22A ln3491 40HF50 lN540 06020L
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A 5 4.0 4.0 4.0 4.5 4.5 4.5 10 15 20 25 30 35 5.0 5.0 5.0 5.0 5.0 5.0 5.0 S.O S.O S.O S.O S.O S.O S.O S.O S.O 6.0 6.0 6.0 6.0 6.0 B.5 B.5 B.5 B.5 8.5 8.5 8.5 9.5 9.5 9.5 9.5 9.5 45 50 55 60 S5

2N6300

Contextual Info: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching

60S5

Contextual Info: 60S SERIES Microsemi Corp. ' Thg Ooóe experts SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call: 602 941-6300 DESCRIPTION/FEATURES • ECONOMICAL 6 AMP Iq MOLDED DEVICE OFFERS CAPABILITY OF STUDMOUNTED RECTIFIERS • 400 AMPS SURGE PROVIDES HIGH IN-RUSH CURRENT CAPABILITY