6 120 71 00 Search Results

semikron rc

Abstract: bc 70 f RC20 Semikron bC 70 by SEMIKRON 0898 semikron mc
Contextual Info: 14.5 Mounting Clamps for Capsule Devices Mounting Clamps MC for double sided cooling Type Ident-No. ▲ New Type F fig. l c e w mm mm mm g 120 71 89 980 kn lbs MC 2-4,5 RC 100 070 4,5 1000 fig. 1 MC 2-6 RC 100 080 6 1350 fig. 1 120 71 89 980 MC 2-9 RC 100 100

Contextual Info: www.teleqqertner.com 125-120 Anschlußmaße nach IEC 1 6 9 - 8 / dimensions according to IEC 1 6 9 - 8 * n19 7+n 1 LerchenstraBe 35 Germany Phone: +49 7157 125-0 Fax: +49 7157 71 Mechanical Characteristics Werkstoffe : Innenleiter Außenleiter sonstige Metallteile

ec16

Contextual Info: Anschlußmaße nach IEC 1 9 6 -4 / m ating face according to EC 1 6 9 -4 Lerchenstrasse 35 Telefon 07157/125-0 Telefax 07157/125-120 71 Steinenbronn Nennansprechgleichspannung 230 V nominal de sp ark-o ver voltage Ableitungsvermögen 2500 1000 5 1 K.Gättner GmbH

Contextual Info: 7 8 6 1 2 3 4 5 REV - DESCRIPT - DATE - APPRVD . . . F F .71 18.0 REAR GASKET .70 17.9 E 1.26 31.9 E .64 16.3 .32 8.1 D 1.33 33.9 D CONNECTOR WITH COVER CLOSED .35 9.0 NOTES: C C 1. MATERIAL: - SHELL: ZINC ALLOY DIE CAST, 3 MICRONS [120 µ"] MIN NICKEL OVERALL.

Contextual Info: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD . . . F F .71 18.0 REAR GASKET .70 17.9 E E 1.26 31.9 .64 16.3 .32 8.1 D 1.33 33.9 D CONNECTOR WITH COVER CLOSED .35 9.0 NOTES: C C 1. MATERIAL: - SHELL: ZINC ALLOY DIE CAST, 3 MICRONS [120 µ"] MIN NICKEL OVERALL.

Contextual Info: 7 8 6 1 2 3 4 5 REV - DESCRIPT - DATE - APPRVD . . . F F 1.38 34.9 .71 18.0 REAR GASKET E E .70 17.9 1.26 31.9 .64 16.3 D D .32 8.1 1.33 33.9 C .74 18.8 CONNECTOR WITH COVER CLOSED SPRING LOADED COVER WITH GASKET NOTES: 1. MATERIAL: - SHELL: ZINC ALLOY DIE CAST, 3 MICRONS [120 µ"] MIN NICKEL OVERALL.

Contextual Info: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD . . . F F 1.38 34.9 .71 18.0 REAR GASKET E E .70 17.9 1.26 31.9 .64 16.3 D D .32 8.1 1.33 33.9 C .74 18.8 CONNECTOR WITH COVER CLOSED SPRING LOADED COVER WITH GASKET 1. MATERIAL: - SHELL: ZINC ALLOY DIE CAST, 3 MICRONS [120 µ"] MIN NICKEL OVERALL.

SKKT 71 16

Abstract: thyri 7112E semikron skkt 22d
Contextual Info: 1S6 0 I fll3tb71 0001117 b I SE MIKRON INC -r .ts -33 */rsm Vrrm dv/ Vdrm d t c r Itrms (maximum values for continuous operation) 125 A I 150 A I 125 A I 150A 80A(78°C) V/|is Itav (sin. 180; Tease = • • • ) 95A (85°C) 80A(78°C) 95A(85°C) SKKT 91/04 D SKKH 71/04 D SKKH 91/04 D

diode T-71

Abstract: AS150A skkt 90 KT72
Contextual Info: S E M IK R O N V rsm V rrm d v / It r m s (m a x im u m v a lu e fo r c o n tin u o u s o p e ra tio n V drm dt)cr 125 A V V/|as SEMIPACK 1 Thyristor/ Diode Modules ITAV (s in . 1 80 ; Tcase = 78 °C ) V 80 A 700 600 5 00 SKKT 71/06 D 900 800 5 00 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D

LIYCY

Abstract: N2925 N292 N292512 modbus protocol fibra optica 14668d liycy 8
Contextual Info: 146 71 EMDX³ MI N292512/00 Module option communication RS485 pour 146 68 Module with RS485 communication option for 146 68 Modul mit Kommunikationsoption RS485 für 146 68 Modulo opzione comunicazione RS485 per 146 68 Module met communicatie optie RS485 voor 146 68

Contextual Info: SCIENTIFIC/ MINI-CIRCUITS 4TE ] • flDbflflll 0001425 041 B S C C a c tive , lo w LO d riv e Frequency Mixers Model o -4dBm LO, up to + 1dBm RF) computer-automated perform ance data typical production unit / fo r data o f o ther m odels consult factory

Contextual Info: 7*^237 ¿57 002^353 1 • I-33-13 SGS-TH O M SON iuiOTsisioes 2N5671 2N5672 S G S-THOMSON 3DE ]> HIGH CURRENT FAST SWITCHING APPLICATIONS DESCRIPTION The 2N5671 and 2N5672 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case. They are especially intended for high current, fast

Microwave PIN diode

Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Contextual Info: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61

LS50-12

Abstract: LS2533 LS100 LS150 LS25 LS50 LS75 LS100-12
Contextual Info: • High MTBF up to 900 000 hours • Superior operating temperatue performance up to 70°C • Very High efficiency up to 87% • Very Low Cost • Compact • Withstands 300VAC surges 5s • Three Year Warranty Key Market Segments & Applications Test & Measurement

Microwave PIN diode

Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
Contextual Info: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71

6FG6

Abstract: EM-80 MIC 6af7 em81 EM 34 EMM803 EFM11 6U5C em87 DM160
Contextual Info: rtarfc«r f«rn3«niUr kM2,C/ta 2 im 1 m i / m u M 1, U M K I 4, Ü Ï 4 M 3 4 , ÜM34 KM 5 M 1 1 , JJM 11 E I 3 5 , 01 35 SI i n EM 71 E* 00, 01 00 Ort»3«ndar Übersicht der Abatimm-Anzeigeröhren Nr Röhre 1 2 3 4 S 6 7 8 9 10 11 12 13 14 15 16 17 18 19

LS1002

Abstract: LS100 LS150 LS25 LS50 LS75 LS150-12 8813
Contextual Info: • High MTBF up to 900 000 hours • Superior operating temperatue performance up to 70°C • Very High efficiency up to 87% • Very Low Cost • Compact • Withstands 300VAC surges 5s • Three Year Warranty Key Market Segments & Applications Test & Measurement

LS2533

Abstract: LS100 LS150 LS25 LS50 LS75 LS15-05 LS150-12
Contextual Info: • High MTBF up to 900 000 hours • Superior operating temperatue performance up to 70°C • Very High efficiency up to 87% • Very Low Cost • Compact • Withstands 300VAC surges 5s • Three Year Warranty Key Market Segments & Applications Test & Measurement

2SC2340

Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
Contextual Info: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

OF IC 7270

Contextual Info: 4 AMP 1471 - 9 REV 31MAR2000 3 2 LOC R E V IS IO N S D IS T AD 00 DESCRIPTIO N N' +.002 E C O —0 5 —7 4 8 1 13FEB06 MB JO if D C REF X — S E C T IO N FINISH OVER BRIGHT TIN A FINISH GOLD INDICATED LEAD O VER OVER OVER .0 0 0 0 5 0 AREA: NICKEL. .0 0 0 0 1 5

diode skn 21

Abstract: SKN 21 DIODE K3M12 SK 782 k3m6 diode skn 240 semikron semikron sk 240 000E-19 K3-M12 semikron k3m12 i s
Contextual Info: s e MIKRON Section 8: Rectifier Diodes Sum m ary of Types Type • New type 1 N 4001 . 4007 G SK 1 SK 1 G SK 3 V rrm V rsm Ifrms IfaV sin. 180 V A A 50 . 1 000 3 @ T case °C 1,1 751> Ifsm 10 ms 25 °C i2t 10 ms 25 °C A A2s 35 6,1 E 32 B 8-5 B 8-9 1 200 . 1 600

Cutler-Hammer type m RELAY

Abstract: westinghouse to Cutler-Hammer cross reference 10000 watt stabilizer transformer winding formula EC-N051 Cutler-Hammer HMCP Cutler-Hammer 480 Volt coil 9.2876.3 magnetic Contactor wiring diagrams cat.201.01.t.e relay D40 cutler-hammer C341A
Contextual Info: Tab3301.fm Page 1 Monday, October 23, 2000 9:49 PM NEMA Contactors & Starters 33-1 January 2001 NEMA Contactors & Starters Vol. 2, Ref. No. [0017] CAT.201.01.T.E Contents Description Freedom Line Product Family Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2225 X7R 335

Abstract: ATC1812 ATC0805 GRM42-6 2r2 101 tdk
Contextual Info: ATC General Purpose Capacitors Low Cost Multilayer Ceramic Capacitors For Surface Mount Applications Manufactured for ATC ATC 001-847 Rev. I; 5/06 ATC GENERAL PURPOSE CAPACITORS: NPO COG DIELECTRIC ELECTRICAL CHARACTERISTICS CAPACITANCE RANGE: 0.5 pF to 0.10 µF.

Arco 262 capacitor

Abstract: arco 462 TRIMMER capacitor arco capacitors 462 transistor 1005 oj arco TRIMMER capacitor 262 arco 468 arco capacitors 262 Arco 426 trimmer arco TRIMMER capacitor 463 arco TRIMMER capacitor
Contextual Info: 5642205 M / A - C O M P H I INC 85D 00418 D T - 31 ~ of DV42Q5S n/A-con p h i as inc de | s m e e o s n-channel enhancement-moae RF Power FETs designed for. HF/VHF Amplifiers Class A, B, or C High Dynamic Range Amp Benefits ooGoma t | 175mhz 6"25yJ 10dB