5BP 2N Search Results

small signal transistor MOTOROLA

Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
Contextual Info: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”

2N3634 MOTOROLA

Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
Contextual Info: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn

2N3501 MOTOROLA

Abstract: 2N3501 k5c transistor 2N3501JAN AICB
Contextual Info: MOTOROU Orderthls document by 2N3501JANID SEMICONDUCTOR TECHNICAL DATA 2N3501JAN, JTX, JTXV, JANS Processed per MIL4-195001366 NPN Silicon SmallSignal Transistors .designed for genera~urpose switching and amplifier applications in hig~voltage .,!.\ ELECTRICAL

2N3506

Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Contextual Info: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)

MOTOROLA 2n2920

Abstract: 2N2920 2N2920JAN
Contextual Info: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge

L1201

Abstract: 2N2060J 2N2060JTX small signal transistor
Contextual Info: , MOTOROW Order thie document by 2N2080JWD SEMICONDUCTOR TECHNICAL DATA ● *{iv \ :,+ \ ‘! .,? .>W, : \ .,i. ,: . ~ ,:, , , IIUlp 2N2060JTX, JANS Processed per MIL4-195001270 J ’11. ~1. .8:6 : qo ~ Dual NPN Silicon Smal14ignal Transistor .dasignedfor genera~urpose amptifierap~oations.

2N6233

Abstract: 2N6235
Contextual Info: O rd er th is docum ent b y 2N6233/D M MOTOROLA SEM IC O N D U C TO R S P.O. BOX 20912 • PHO ENIX. A R IZ O N A 85036 5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS . . . useful fo r high-voltage m edium power a p p lica tio n s such as sw itch ing regulators.

2N6439

Contextual Info: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

2N6346A

Abstract: 2N6346 2N634 2N6347A 2N6348A 2N6349A 380 volt 50 hz 50 amp triac 221A-04 2N6342 2N6349
Contextual Info: MOTOROLA Order this document by 2N6346A/D SEMICONDUCTOR TECHNICAL DATA Triacs 2N6346A thru 2N6349A Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon

2n6439

Abstract: UT25 VK200 Ferox
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

2N6348 equivalent

Abstract: 2N6342 2N6343 MOTOROLA triac 2n6348 2N6343 2N6349 2N6347 2N6348 2N6345 2N6346
Contextual Info: MOTOROLA Order this document by 2N6342/D SEMICONDUCTOR TECHNICAL DATA 2N6342 thru 2N6349 Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon

2N6439

Abstract: 2n6439 TRANSISTOR
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.

kd 2902

Abstract: 2N7008
Contextual Info: Order this document by 2N7008/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Small-Signal Field Effect Transistor N -C hannel E n h an cem en t-M o d e S ilic o n G ate T M O S N -C H A N N E L S M A L L -S IG N A L T M O S FET . . . are d e signed fo r h ig h vo lta g e , hig h speed a p p lica tio n s such as

2N5061

Abstract: 2n5060 thyristor 2N5060 MOTOROLA 2N5064 2N5062 2N5060 2N5060-D Motorola 2n5060 2N5061/2N5062 2n5062 datasheet free download
Contextual Info: MOTOROLA Order this document by 2N5060/D SEMICONDUCTOR TECHNICAL DATA 2N5060 2N5061 2N5062 * 2N5064 * Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as

vc 3842

Abstract: transistor 5BM
Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AZ3842B/3B/4B/5B General Description Features The AZ3842B/3B/4B/5B are high performance fixed frequency current-mode PWM controller series. The difference between AZ384XA and AZ384XB is that they have different start-up currents.

transistor 5BM

Abstract: st 3844b 5bm Marking 3842 PWM power supply application note 5bm transistor AZ3842B 4800 power mosfet 5Bp marking AZ3842 3844b
Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AZ3842B/3B/4B/5B General Description Features The AZ3842B/3B/4B/5B are high performance fixed frequency current-mode PWM controller series. The difference between AZ384XA and AZ384XB is that they have different start-up currents.

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

Stackpole 57-3238

Abstract: MPC1000 Toroid 57-9322 57-1845-24b Indiana general ferrite core Stackpole ferrite eb27a stackpole 57-1845-24b EB-27A 300w amplifier 30mhz
Contextual Info: C O M M U N IC A T IO N S Get 300 Watts PEP linear Across 2 To 30 MHz From This Push-Pall Amplifier {The heat sink shown with amplifier Ss sufficient only for short test periods under forced air cooling.} This bulletin supplies sufficient information.to build a

Nippon capacitors

Contextual Info: MOTOROLA O rder th is docum ent by MRFIC2403/D SEMICONDUCTOR TECHNICAL DATA M R F IC 2 4 03 The M R F IC Line 2.4 G H z G a A s Pow er Am plifier M otorola Preferred Device 2.4 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT The MRFIC2403 is a two-stage class B GaAs power amplifier in a low-cost

AN1082

Abstract: MC33079 application note MPX2100DP 2N2222 motorola 2N2222 MC33078 MC33079 MC78L12AC MPX2100 OF transistor 2N2222
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1082/D AN1082 Simple Design for a 4-20 mA Transmitter Interface Using a Motorola Pressure Sensor Prepared by: Jean Claude Hamelain Motorola Toulouse Application Lab Manager INTRODUCTION Pressure is a very important parameter in most industrial

Contextual Info: MOTOROLA Order this document by MRF1000MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MA MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.

2n2222 npn

Abstract: 2n2222 npn transistor MRF857 mrf857s
Contextual Info: O rder th is data sheet by MRF857/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF857 M RF857S T h e RF Line NPN Silicon RF Pow er TVansistor M otorola P referred Devices CLASS A 800-960 MHz 2.1 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

MRF860

Abstract: 2n2222 npn transistor 2N2222 rf
Contextual Info: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier