small signal transistor MOTOROLA
Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
Contextual Info: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”
|
Original
|
by2n3621jtnd2n3821jtxmll4-19500/375tm06af+8phw41012ns21jmdsmall signal transistor motorolaw21 transistormotorola small signal transistorfidl5bp transistormotorola transistor
|
PDF
|
2N3634 MOTOROLA
Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
Contextual Info: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn
|
Original
|
orderth182n3634jtx2n3635jtx2n3636jtx+102n3637jtxcharacterlst192n36342n36352n36362n36372n3634 motorolam21 transistortransistor m21mil-19500
|
PDF
|
2N3501 MOTOROLA
Abstract: 2N3501 k5c transistor 2N3501JAN AICB
Contextual Info: MOTOROU Orderthls document by 2N3501JANID SEMICONDUCTOR TECHNICAL DATA 2N3501JAN, JTX, JTXV, JANS Processed per MIL4-195001366 NPN Silicon SmallSignal Transistors .designed for genera~urpose switching and amplifier applications in hig~voltage .,!.\ ELECTRICAL
|
Original
|
2n3501janid2n3501janmil4-195001366lphx241011-2+42n35012n3501 motorolak5c transistoraicb
|
PDF
|
2N3506
Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Contextual Info: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)
|
Original
|
bv2n850wwd2n3506jtx2n3507jtxtm05ad+92nw062nw07300vdc2n35061phw41011-22ns50mwd2n35072n3506 motorola15-ado
|
PDF
|
M036
Abstract: 2N3251AJAN PHM4101
Contextual Info: MOTOROW Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3251AJAN/D e 2N3251AJAN, JTX Processed per MIL4-195001323 PNP Silicon Smal14ignal Transistors .designed for genera~urpose switching and amplifier applications. CASE 22*, TM06AA .,4., , ‘, ELECTRICAL CHARACTERlSTl~~#*25°C
|
Original
|
2n3251ajan/d2n3251ajanmil4-195001323smal14ignal+4tm06aaphm41012n3251ajanidm036
|
PDF
|
2N3440 MOTOROLA
Abstract: 2n3439 motorola MOTOROLA 2N3440 2N3439 LF036 Y14W 5bp 2n 2N3439JAN 2N3440 2N3440JTX
Contextual Info: MOTOROU Orderthls document by 2N3439JANID SEMICONDUCTOR TECHNICAL DATA o 2N3439JAN, JTX, JTXV 2N3440JTX, JTXV Processed per MIL4-I 9500/368 NPN Silicon Small+ignal Transistors .designed for tighvoltage amplifier applications. MAXIMUM RATINGS Rsttng Symbol
|
Original
|
2n3439janid2n3439jan2n3440jtx1phw4101+92n3439jan/d2n3440 motorola2n3439 motorolamotorola 2n34402n3439lf036y14w5bp 2n2n3440
|
PDF
|
2N2219A MOTOROLA
Abstract: 2N2219A 2N2219AJAN 4101 transistor
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039
|
Original
|
2n2219ajanid2n2219ajant0205ad2n22d9a+42n2219ajan/d2n2219a motorola2n2219a4101 transistor
|
PDF
|
Q2N44
Abstract: 06AF 2N44 motorola MN transistor 2N4416AJTX
Contextual Info: MOTOROU Order this document by2N416AJTWD SEMICONDUCTOR TECHNICAL DATA o 2N4416AJTX, JTXV Processed per MlL-l 9500/428 N+hannel, Small+ignal Field Effect Transistor CASE 2W3, T=06AF .:’.~{.3” ELECTRICAL CHARACTERISTICS WA= #~@& *\A .*.<* Characterlstlc ., “$}$,w
|
Original
|
by2n416ajtwd2n4416ajtx1phw41012n4416ajwd+4q2n4406af2n44motorola mn transistor
|
PDF
|
w21 transistor
Abstract: 2N3764 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358
Contextual Info: . MoToRom Order this document by 2N3764~WD SEMICONDUCTOR TECHNICAL DATA ● 2N3764JTX, JTXV, JANS Processed per MIL+-19500/396 PNP Silicon Smal14ignal Transistor .designed for genera~urpose switching applications. ● Emtisr+ase Vohge * Colleotor Current — Cotinuous
|
Original
|
2n37642n3764jtxsmal14ignaltw06ab+71phw41012n37wtwdw21 transistormil-19500motorola lonmotorola mn transistormotorola transistor 358
|
PDF
|
motorola g18
Abstract: 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S
Contextual Info: MOTOROU o Orderthls document by 2N3019SJANID SEMICONDUCTOR TECHNICAL DATA ttl ,$$>. *t~i”*J,:~$< >,. j/ ,>, ,.!$: .> ~>‘ 1111~ ~~~ ‘‘}1lb “,., 2N3019SJAN, dTX, dTXV, dANS 2N3700dAN, JTX, JTXV, JANS I\o Processed per MlL4-19500/391 NPN Silicon Small+ignal
|
Original
|
2n3019sjanid2n3019sjan2n3700danmll4-19500/391+112n3019st0205ad1phx24101motorola g182n3012n3700y14w2n3019s motorolameret2n3700 motorolamotorola 2n3019s
|
PDF
|
MOTOROLA 2n2920
Abstract: 2N2920 2N2920JAN
Contextual Info: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge
|
Original
|
2n2920janid2n2920jans50ss1phw4101+32n292wmotorola 2n29202n2920
|
PDF
|
Condor c-fi 30
Abstract: w33 transistor 2N3735 2N3737 2N3737JTX 2N3735J 2N3735JTX 2N3737J desi 30 2N3735 MOTOROLA
Contextual Info: MOTOROU Order this document by2N3735JT~ SEMICONDUCTOR TECHNICAL DATA o 2N3735JTX, JANS 2N3737JTX Processed per MIL4-I NPN Silicon Smal14ignal tlb ,11 9500/395 Transistors . . .deeigned for genera~urpoee switching and amplifier applications. 2N3737 is Not Recommended for New Desi$#$+;’
|
Original
|
by2n3735jt2n3735jtx2n3737jtxsmal14ignal+112n37372n3735t0205adtg206ab1phx24101condor c-fi 30w33 transistor2n3735j2n3737jdesi 302n3735 motorola
|
PDF
|
2N4931
Abstract: GE-3 PNP transistor 2N3743 2N3743JTX
Contextual Info: MOTOROU Orderthls document by2N37-D SEMICONDUCTOR TECHNICAL DATA a ,+!$ ,*: 1. ~t , ~ t,. ~, ., .6> ~ { , ~s. II 2N3743JTX, JTXV 2N4931JTX, JTXV ,11 Processed per MlL4-19500/397 : ‘t. 4 A: Plmlachnologle: ‘L Operallon qejlai .<. ?~, t:,~‘ PNP Silicon, High Voltage
|
Original
|
by2n37-d2n3743jtx2n4931jtxmll4-19500/397+51phx241011-22n37wtwd2n4931ge-3 pnp transistor2n3743
|
PDF
|
L1201
Abstract: 2N2060J 2N2060JTX small signal transistor
Contextual Info: , MOTOROW Order thie document by 2N2080JWD SEMICONDUCTOR TECHNICAL DATA ● *{iv \ :,+ \ ‘! .,? .>W, : \ .,i. ,: . ~ ,:, , , IIUlp 2N2060JTX, JANS Processed per MIL4-195001270 J ’11. ~1. .8:6 : qo ~ Dual NPN Silicon Smal14ignal Transistor .dasignedfor genera~urpose amptifierap~oations.
|
Original
|
2n2080jwd2n2060jtxmil4-195001270smal14ignal+51phw41012n20mjtndl12012n2060jsmall signal transistor
|
PDF
|
|
|
2N6233
Abstract: 2N6235
Contextual Info: O rd er th is docum ent b y 2N6233/D M MOTOROLA SEM IC O N D U C TO R S P.O. BOX 20912 • PHO ENIX. A R IZ O N A 85036 5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS . . . useful fo r high-voltage m edium power a p p lica tio n s such as sw itch ing regulators.
|
OCR Scan
|
2n6233/d2n62332n6235 |
PDF
|
to225aa
Abstract: to225a TO-225AA B52200F006 2N6237 2N6241 2N6241 equivalent 2N6239 2N6240 2N6238
Contextual Info: MOTOROLA Order this document by 2N6237/D SEMICONDUCTOR TECHNICAL DATA 2N6237 thru 2N6241 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
|
Original
|
2n6237/d2n62372n6241to225aa+7to225ato-225aab52200f0062n6241 equivalent2n62392n62402n6238
|
PDF
|
2N6507 MOTOROLA
Abstract: 2N6506 applications 2N6508 MOTOROLA 2N6509 2N6504 MOTOROLA 2N6507 2N6504 2N6506 2N6504-D 221A-04
Contextual Info: MOTOROLA Order this document by 2N6504/D SEMICONDUCTOR TECHNICAL DATA 2N6504 thru 2N6509* Thyristors Silicon Controlled Rectifiers *Motorola preferred devices . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
|
Original
|
2n6504/d2n65042n650921a-04+9o-220ab2n6507 motorola2n6506 applications2n6508 motorola2n6504 motorola2n65072n65062n6504-d221a-04
|
PDF
|
2N6439
Contextual Info: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
|
OCR Scan
|
2n6439/d2n6439 |
PDF
|
2N6346A
Abstract: 2N6346 2N634 2N6347A 2N6348A 2N6349A 380 volt 50 hz 50 amp triac 221A-04 2N6342 2N6349
Contextual Info: MOTOROLA Order this document by 2N6346A/D SEMICONDUCTOR TECHNICAL DATA Triacs 2N6346A thru 2N6349A Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon
|
Original
|
2n6346a/d2n6346a2n6349a2n6346+72n6342n6347a2n6348a380 volt 50 hz 50 amp triac221a-042n63422n6349
|
PDF
|
2n6439
Abstract: UT25 VK200 Ferox
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
|
Original
|
2n6439/d2n6439ut25vk200+1ferox
|
PDF
|
2N6348 equivalent
Abstract: 2N6342 2N6343 MOTOROLA triac 2n6348 2N6343 2N6349 2N6347 2N6348 2N6345 2N6346
Contextual Info: MOTOROLA Order this document by 2N6342/D SEMICONDUCTOR TECHNICAL DATA 2N6342 thru 2N6349 Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon
|
Original
|
2n6342/d2n63422n63492n6348 equivalent+72n6343 motorolatriac 2n63482n63432n63472n63482n63452n6346
|
PDF
|
2N6439
Abstract: 2n6439 TRANSISTOR
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.
|
Original
|
2n6439/d2n64392n6439 transistor |
PDF
|
kd 2902
Abstract: 2N7008
Contextual Info: Order this document by 2N7008/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Small-Signal Field Effect Transistor N -C hannel E n h an cem en t-M o d e S ilic o n G ate T M O S N -C H A N N E L S M A L L -S IG N A L T M O S FET . . . are d e signed fo r h ig h vo lta g e , hig h speed a p p lica tio n s such as
|
OCR Scan
|
2n7008/dkd 29022n7008 |
PDF
|
2N6027 MOTOROLA
Abstract: 2N6028 MOTOROLA 2N6027 2n5270 2N6028 PUT 2N6027 PUT 2N6028 2N6027 CIRCUIT 2N6027-D 2n6027 PUT
Contextual Info: MOTOROLA Order this document by 2N6027/D SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to “program” unijunction characteristics such as
|
Original
|
2n6027/d2n60272n60282n6027 motorola+72n6028 motorola2n5270put 2n6027put 2n60282n6027 circuit2n6027-d2n6027 put
|
PDF
|