584 TRANSISTOR Search Results

C124E

Abstract: A124e 96-384-A124E FMG1A UMH5 94S-789-C124E
Contextual Info: Transistors UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5A 96-384-A124E (94S-789-C124E) 584

12v DC motor

Abstract: remote speed control of ac motor 100K preset potentiometer DIODE in4005 IN4005 diode remote speed control of dc motor relay 12v dc 100rpm DC motor potentiometer 4k7 1K preset potentiometer
Contextual Info: RS 320-584 PB0224 Issue 4 OEM Speed control board 102 and 313 speed control board Installation and operating instructions 1 Contents Declarations 1.0 Description 2.0 Specification 3.0 Identification 4.0 313FD/D 12V DC motor - externally mounted transistor

4 Pin SMD Hall sensors

Abstract: 575K hall sensor smd smd hall sensor 575E 4 pin hall sensor E hall sensor smd 4 pin hall sensor 4-pin Hall Sensor code G MARKING CODE TBD
Contextual Info: ADVANCE INFORMATION MICRONAS Edition Oct. 11, 2000 6251-538-1AI HAL571, 573.575, HAL581, 584 Two-Wire Hall Effect Sensor Family MICRONAS HAL57x, HAL58x ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction

HALL Sensor TO92UA

Abstract: TRANSISTOR SMD MARKING CODE 512 HAL573 HAL574 HAL575 HAL576 HAL581 HAL584 TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4
Contextual Info: DATA SHEET MICRONAS Edition Nov. 27, 2003 6251-538-2DS HAL573.576, HAL581, 584 Two-Wire Hall Effect Sensor Family MICRONAS HAL57x, HAL58x DATA SHEET Contents Page Section Title 3 3 3 4 4 4 5 5 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features

SMD marking codes Hall sensors

Contextual Info: DATA SHEET MICRONAS Edition April 11, 2002 6251-538-1DS HAL574.576, HAL581, 584 Two-Wire Hall Effect Sensor Family MICRONAS HAL57x, HAL58x DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features

Contextual Info: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document

Contextual Info: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document

smd code Hall

Abstract: HAL 579 magnetic sensor circuit diagram 579K HAL57x DSH000145 HAL573 HAL574 HAL575 HAL576
Contextual Info: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document

photoswitch

Abstract: Optical diffuse Sensor 24-240V
Contextual Info: Slim Style Photoswitches includes delay timer Stock Nos. 256-584, 256-590, 256-607 6. Screw tightening torque General This range of slim style photoswitches comprise of diffuse scan, polarised retroreflective scan and a through scan pair. Both retro and diffuse scan units operate from a wide supply vo tage

6118A

Abstract: CDM6118
Contextual Info: 584 CMOS Microprocessors, Memories and Peripherals CDM6118A-3 A 7 -A 6 - 2 23 - A8 4 5 - 3 22 - A9 A 4 - A 21 — WE A 3 - 5 20 — cV \ A2 - 6 19 - AIO A I - 7 ie AO - 8 17 - 1 / 0 8 9 16 _ 1 / 0 7

Contextual Info: y k i y j x i y k i Pin Programmable Precision Voltage Reference M axim ’s AD 584 is a tem perature com pensated, bandgap voltage reference w hich provides pin-program m ­ able output voltages of +10.00V, +7.50V. +5.00V, and +2.50V. External co m p onents are not required for these

2U37

Abstract: H1P transistor with three end QQ 8114 transistor 2N6985 2N6986 M11 marking transistor feedthru cap H1P transistor 4 pr 16 awg 3011 fe
Contextual Info: I INCH-POUND I MIL-S-1950 0/584 25 Ju ly 1990 MILITARY SPECIFICATION prut rniinn rrnn nrwt r r oc.ru ourauuu I UK u l u u , nr- r\Ai ir r\ rnnif»t t t a « Kr ruM CK ik a n ^ i^ iu k , tinti ▼ i ta nu nrnt r\éin i r\in i ru ^ n -ru L L TYPES JANTX. JANTXV. ANO JANS. 2N6985 AND 2N6986

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

321 SOT

Abstract: DIP-6 bsp300 SOT23_215 BSS125
Contextual Info: SIEMENS Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Small Signal Transistors Type ^88 nto V ^OS(0n)mw mA Q Pese») V Package Page -1 .8 . .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 - 1.8 .-0 .7 TO-92 TO-92 TO-92 TO-92 503 416

motorola MJ15001

Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V

2SC105

Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp

All similar transistor 2sa715

Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:

2SA1046

Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

mje15033 replacement

Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

BU108

Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —

MJ15023 EQUIVALENT

Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —

mje15033 replacement

Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver