55VL Search Results

EQFP100-P-1420-0

Contextual Info: TOSHIBA TC 55VL818FF-75,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The 55VL818FF is a synchronous static random access memory SRAM organized as 524,288 words

2SB673

Contextual Info: 9 Q R R 7 Q ¿O D D R1A I OjV / R 7 5 s ilic o n p n p t r i p l e d if f u s e d t y p e DARLINGTON POWER “ jO / V INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10.3MAX. 0 3 .6 ± O .2

transistor 2sa968b

Contextual Info: i TOSHIBA TRANSISTOR ZSA96öB SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency: fx=100MHz (Typ.) . Complementary to 2SC2238B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

2SC1617

Abstract: AC73
Contextual Info: "Sb TOSHIBA { D IS CR ETE/ OP TO! — 9097250 TO SHIBA D ISCR ETE/O PTO 2SC1617 d TI^OTTESO OOD74S1 □ | — y ~‘ 6t>C ' 0 7 ^ 5 1 / D ~ J" 3 3 SILICO N NPN T R IP L E D IFFU S ED TYP E Unit in mm BLACK AND WHITE TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES;

TOSHIBA 1N DIODE

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS

yc 545

Abstract: 2SK678
Contextual Info: 2SK678 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E ^-MOSii INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in n DRIVE APPLICATIONS. 20.5 MAX. • Low Drain-Source ON Resistance

Contextual Info: 45E D i Q W S S Q □ □ 1 7 Û D C1 D • TOSM ■ TOSHIBA TRANSISTOR_ 2SC2238B SILICON NPN EPITAXIAL T Y P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) POWER AMPLIFIER APPLICATIONS. Unit DRIVER STAGE AMPLIFIER APPLICATIONS. 1Q.3MAX.

lt 7216

Contextual Info: TOSHIBA OISCRETE/OPTOJ- 9097250 TOSHIBA "Sb DeT| ^ 7 5 5 0 DQD7515 T 5 6C 07215 <DIS C R E T E/ OP TO SILICON PNP EPITA XIA L TYPE PCT PROCESS) POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE 0 3.6±0.2 1(X3 MAX. APPLICATIONS

AN980 motorola MC3362

Abstract: LFC-4551 A4222 7MC8128 murata sfe10.7ma j350 TRANSISTOR SFA10,7 mc3362
Contextual Info: MC3362 Low-Power Narrowband FM Receiver . . . includes dual FM conversion with oscillators, mixers, quadrature discriminator, and meter drive/carrier detect circuitry. The MC3362 also has buffered first and second local oscillator outputs and a comparator circuit for

2SB553

Abstract: 2SD553 0732c
Contextual Info: TOSHIBA {DISCRETE/OPT0> "Sb DE I T D T 7 E S 0 D0D7357 T V 9097250 TOSHIBA <D I S C R E T E / O P T O S IL IC O N PNP T R IP L E D IF F U S E D T YPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm >3.6±OJ3 HIGH CURRENT SWITCHING APPLICATIONS.

2SA968B

Abstract: 2SC2238B AC75
Contextual Info: 45E D Bi SDS7ZSD □ □17fiDcì □ « T O S M TOSHIBA TRANSISTOR_ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2SC2238B (DISCRETE/OPTO) Unit in POWER AMPLIFIER APPLICATIONS. 1Q .3M A X. DRIVER STAGE AMPLIFIER APPLICATIONS.

2SA968B

Abstract: 2SC2238B AC75
Contextual Info: 45E D Bi SDS7ZSD □ □17fiDcì □ « T O S M TOSHIBA TRANSISTOR_ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2SC2238B (DISCRETE/OPTO) Unit in POWER AMPLIFIER APPLICATIONS. 1Q .3M A X. DRIVER STAGE AMPLIFIER APPLICATIONS.

TC5081AP

Abstract: three phase pulse generator phase comparator TC508
Contextual Info: TC5081AP TENTATIVE PHASE COMP ARA TOR 2 2.2 8 ±0.2 T h e TC5081Ar c o n s i s t s o f a d i g i t a l 3.2+0.2 phase comparator and an amplifier. Three state output pass filter amplifier connected to l o w mm using an internal will produce DC voltage I2.5 4Ì

2Sc2565

Abstract: Toshiba 2sc2565 2SA1095 Toshiba 2SA1095 audio amplifier
Contextual Info: S IL IC O N PIMP E P IT A X IA L T Y P E PCT PROCESS Unit in mm - -34.3MAX. POWER AMPLIFIER APPLICATIONS. FEATURES: 30,.0’ ', ' ‘ ' "• High Breakdown Voltage : Vc e o =-160V 2.0 2i:4±0.2 - 0Z£±O.2 • High Transition Frequency : £f=60MHz (Typ.)

VHF FM PLL schematic mc145152

Abstract: AN980 motorola MC3362 AN980 Motorola VHF Narrowband 8 channel RC transmitter and Receiver circuit DIA ITT 10.7 MHz crystal filter RMC2A6597 RS-204-C noaa weather radio circuit diagram radio av receiver schematic diagram fm receiver single chip
Contextual Info: WARNING: THIS DIGITAL REPRODUCTION DOES NOT MEET WITH MOTOROLA’S STANDARD FOR QUALITY While we regret the electronic source for the following document does not comply with Motorola’s standard for quality, it currently represents the best reproduction available. Improving the quality of substandard digital reproductions is a key goal. To improve the standard,

2sc-1625

Abstract: 2sa814
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA bFJtDTTSSD DDD7a3b h Ib DISCRETE/OPTO 2 S A 8 1 4 ' •2 S A 8 1 5 i 56C 07236 SILICON PNP EPITAXIAL BASE MESA TYPE Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. ,10.3MAX., 0a£±O,Z DRIVER STAGE AMPLIFIER APPLICATIONS.

Contextual Info: TLP751 GaAGAs IRED & PHOTO-IC TENTATIVE DATA DIGITAL LOGIC GROUND ISOLATION. Unit in mm LINE RECEIVER. MI C R O P R O C E S S O R SYSTEM INTERFACES. SWITCHING POWER SUPPLY FEE D B A C K CONTROL. ANALOG SIGNAL ISOLATION. The Toshiba TLP751 Consists of GaAJiAs high-output

MP5001

Contextual Info: SILICON NPN/PNP EPITAXIAL TYPE POWER TRANSISTOR 5 IN 1 MP5001 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. . High Collector Power Dissipation. : P t =10W • High Collector Current

2SD880

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High DC Current Gain : b p E = 3 0 0 M a x . (VCE=5V, IC=0.5A) 10.3M A X ¡z ¡5 6 ± 0 .a . Low Saturation Voltage : VCE(sat)=1.0V(Max.)(IC=3A, IB=0.3A)

2SD549

Contextual Info: St. TOSHIBA {D IS CRETE/O PTO} 9097250 TOSHIBA DEI TO^HSO 0QD772H H CDISCRETE/OPTO SILICO N NPN E P IT A X IA L TYP E D A RLIN G TO N POWER) Unit in mm 7.9MAX. PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

MP4011

Contextual Info: MP4011 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 O HIGH POWER S W I T C H I N G APPLICATIONS, INDUSTRIAL APPLICATIONS Unit in mm o HAMMER DRIVE, PULSE M O TOR DRIVE AND INDUCTIVE LOAD SWITCHING. 2 5 .2 ± 0.2 • Small Package by Full Molding.

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: TOSHIBA {DISCRETt/OPTüT 9097250 TOSHIBA 5b DE | C1DT72SG [][]D73a7 i DIS C R E T E/ OP TO SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm 3-6 ± 0 .2 10.3 MAX. HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

Contextual Info: TLP630 GaAs IRED & PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS Unit in mm AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo­ transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead plastic DIP