55S5 Search Results

vtm 206-8

Contextual Info: 55S55S55S55S55S55S55S55S55S55S55SSS t> ssssssiisiisiisiisiisiisiisssis; MX* COM, INC. MiXed Signal ICs DATA BULLETIN CMX624 Bell 202 and V.23 Modem with Call Progress and DTMF ADVANCE INFORMATION - Shipping September 98 Features Applications Bell 202 and V.23 Compatible Modem

TBA620

Abstract: IR receiver TK 19 527 20E-03
Contextual Info: 55S55S55S55S55S55S55S55S55S55S55SSS t> MX* COM, INC. MiXed Signal ICs DATA BULLETIN CMX644 ssssssiisiisiisiisiisiisiisssis; Bell 212A and V.22 Modem with Call Progress and DTMF ADVANCE INFORMATION - Shipping July 98 Features Applications Bell 212A and V.22 Compatible Modem

ZVEI2 Tone generator

Abstract: ZVE*11 ZVE11
Contextual Info: 55S55S55S55SSSSSSSSSSSSSSSSS: r > AAX*COM,INQ. MiXed Signal ICs DATA BULLETIN A J IY Q O Q IV IA O ^ O CTCSS/DCS/SelCall Processor PRELIMINARY INFORMATION Features Applications • Fast CTCSS Detection • Radio Systems Requiring Sub-Audible Signaling Trunking Control

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

29F080

Abstract: S29F080
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s

Contextual Info: l a tt ic e sem ico nducto r 4bE D • SBAfalMI G Q D m m h BILAT p L S r 1016 ü lL a ttic e programmable Large Scale Integration T -Ÿ é /' Ÿ Û ' wu.»ir.q r j ^ ■ ä ü ä a a iü ä Feature Ÿ a • PROGRAMMABLE HIGH DENSITY LOGIC —• Member of Lattice's pLSI Family

Contextual Info: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n

Contextual Info: AT&T Data Sheet October 1995 Microelectronics Optimized Reconfigurable Cell Array ORCA 2C Series Field-Programmable Gate Arrays Features Description • High-performance, cost-effective 0.5 |im technology (four-input look-up table delay less than 3.6 ns)

Contextual Info: I l i ^ h l*i i loi i n ,iih c S I 2k x X r>V C M O S Ma sh MiPKOM •■ \ S 2 >M 40 A S I ?.KX<S CMOS f ldsli I I f'KOM Preliminary information Features • Low power consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t

ITT 435

Abstract: .5555b 29F002 18-SO AS29 a37al 1L400 29F002-S5 itt435 120PI
Contextual Info: « H ig h p e rfo rm a n ce 256K X 8 5 V CMOS Flash EEPROM AS29F002 A 2J>6Kx8 CMOS Flash EEPROM Prelim inary inform ation Features • O r g a n iz a tio n : 2 5 6 K x 8 • S e c to r a r c h ite c tu r e - O n e 16K; tw o 8K; o n e 32K ; a n d th re e 64K b y te secto rs

Contextual Info: N O TES: REV POS.I 2. DELETED. DIMENSIONS APPLY AFTER INSTALLATION IN P.C. BOARD. [6 ] .0078/0.2 MAX. GAP PERM ISSIBLE TO P.C. BOARD. 5 ROW d - 5 ROW c - 5 ROW b - 5 ROW a - 5 ROW z - 0 I ROW e - 5 5 5 5 5 0I l oi 5 5 5 5 5 6 5 5 5 5 0I0I O E 6 I BACKPANEL PIN CONNECTORS

Sharp lcd IIS

Abstract: s26 sharp acl01 Sharp EL Displays
Contextual Info: SHARP [SPEC No. 1 E A 0 8 3 0 3 A ISSUE: Apr. 15. 1996 To; ITENTAT I VEI SPECIFICATIONS Product Type 60 SegmentOutputs/l7 CommonOutputs LCD Driver built Model No. in CGROM LH1591 %This tentative specification contains 40 pages including the cover and appendix.

CXD1255Q

Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
Contextual Info: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video

555 7490 7447 7 segment LED display

Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

ym 238

Abstract: hy 214 29F002
Contextual Info: H ig h P e rfo rm a n ce « 256K X 8 AS29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current

HT 1200-4 smd

Abstract: kCy 2800 AVT 4028 TDK CP 3607 edac 96 pin edac connector moy SMD TA8101 mil-c-21097 connector smd code marking WJM 302-182-520-201
Contextual Info: S ISO 9001 FM 63475 E 1 F 1 C COMPLIANT GROUP A world class manufacturer of high quality electronic connectors with offices in Canada United States England Taiwan China EDAC components are available through a worldwide network of Distributors and Manufacturers Representatives

Contextual Info: Y I I I I VI A I •■ ■ w W 11’1 1 1 HY29F400T/B Series 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • • • • • • 5.0 V 1 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 90 ns access time

Q20G

Abstract: 00F1H MX-2S
Contextual Info: is M « r r c a M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPRO M commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture - 16 equal sectors of 128k bytes each

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20827-1E FLASH MEMORY CMOS 2 M 2 5 6 K X 8 MBM29LV002T/MBM29LV002B • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: T O SH IB A TH50VSF1320/1321A A X B TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM ORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1320/1321AAXB is a mixed containing a package 2,097,152-bit SR A M and a 8,388,608bit fla s h m em ory. The SR A M ia organ ized as 262,144 w ords by 8 bits an d th e fla sh m em o ry is

AD621

Contextual Info: JUN 3 r 1 « i' ANALOG ► DEVICES FEATURES EASY TO USE Pin-Strappable Gains of 10 & 100 All Errors Specified for Total System Performance Higher Performance than Discrete In-Amp Designs Available in 8-Pin DIP and SOIC Low Power, 1.3 mA max Supply Current

E525

Abstract: E5-25
Contextual Info: 123456789ABCDED12F4567 D6D6 123456789ABCDED12F4567 67D5 !D9C1"8 # !D3$%&% 1'$ BFF5  !B7FC5 FB7AFF5 DF5 "#F95 $8FCD5 F$$FA 97895 79F5 "9DAFD5 8%5 6789AB8CD&5 "9"98F79' "C779598"F5 E5FABC%'

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