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    5551 TRANSISTOR Search Results

    5551 TRANSISTOR Result Highlights (5)

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    5551 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5551

    Abstract: 5551 transistor 5551 datasheet 5401 555-1
    Contextual Info: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance


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    VCEO160V 440um 440um 110um 110um 5551 5551 transistor 5551 datasheet 5401 555-1 PDF

    1N914 SOT-23

    Abstract: ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G
    Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


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    MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 SOT-23 ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G PDF

    1N914 SOT-23

    Abstract: MMBT550LT1
    Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160


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    MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1 PDF

    Contextual Info: MMDT5401 Dual Transistor NPN/PNP SOT-363 Features — Epitaxial Planar Die Construction — Complementary NPN Type Available(MMDT 5551) — Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


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    MMDT5401 OT-363 -100A -10mA -50mA 100MHz -200A, PDF

    5401 transistor

    Abstract: 5401 5551 transistor transistor 5401
    Contextual Info: 5401 5401 Silicon PNP Epitaxial Transistor Description: The 5401 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥150V@IC=1mA ●Complementary to 5551 Chip Appearance


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    VCEO150V 440um 440um 110um 110um -120V, 5401 transistor 5401 5551 transistor transistor 5401 PDF

    MMDT5401

    Abstract: K4m TRANSISTOR J-STD-020A MMDT5401-7 MMDT5401-7-F
    Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT5401 Features • · · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


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    MMDT5401 OT-363, J-STD-020A MIL-STD-202, DS30169 MMDT5401 K4m TRANSISTOR J-STD-020A MMDT5401-7 MMDT5401-7-F PDF

    5551

    Abstract: MMDT5401
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching


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    OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz -200A, 5551 MMDT5401 PDF

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
    Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


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    MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1G MMBT5551LT3 5551 SOT-23 PDF

    Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


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    MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D PDF

    5551

    Abstract: F MARKING
    Contextual Info: BCP5551 NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking: 5551 XXXX xxxx = Date Code


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    BCP5551 OT-89 100MHz 01-Jun-2002 5551 F MARKING PDF

    transistor 2N 5551

    Abstract: 5551 transistor BR 5551 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn 2N5551 2N5550
    Contextual Info: HN/2N 5550/5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92


    OCR Scan
    2N5400 2N5401 100MHz transistor 2N 5551 5551 transistor BR 5551 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn 2N5551 2N5550 PDF

    Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


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    MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C MIL-STD-202, PNP5401) PDF

    MMDT5401

    Contextual Info: MMDT5401 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMDT 5551 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


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    MMDT5401 OT-363 2002/95/EC MMDT5401 PDF

    Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


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    MMDT5451 5551-Type 5401-Type OT-363 OT-363, MIL-STD-202, -10mA, -50mA, PDF

    MMDT5451

    Abstract: PNP5401
    Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


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    MMDT5451 5551-Type 5401-Type OT-363 OT-363, MIL-STD-202, -10mA, -50mA, MMDT5451 PNP5401 PDF

    BR 5551

    Abstract: 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


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    WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz BR 5551 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor PDF

    cd5551

    Abstract: CD 5551 5551 2N5551
    Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5551 9AW TO-92 CBE MARKING : CD 5551 High Voltage NPN Transistor For General Purpose And Telephony Applications.


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    2N5551 C-120 cd5551 CD 5551 5551 2N5551 PDF

    PNP5401

    Abstract: J-STD-020A MMDT5451 code marking KNM BR 5551
    Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


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    MMDT5451 5551-Type 5401-Type OT-363, J-STD-020A MIL-STD-202, NPN5551) PNP5401) PNP5401 J-STD-020A MMDT5451 code marking KNM BR 5551 PDF

    K4m transistor

    Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package C2 Case: SOT-363, Molded Plastic


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    MMDT5401 OT-363 OT-363, J-STD-020A MIL-STD-202, MMDT5401-7 3000/Tape com/datasheets/ap02007 DS30169 K4m transistor PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


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    WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching


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    OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching


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    OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz PDF

    BR 5551

    Abstract: code marking KNM BR N 5551
    Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


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    MMDT5451 5551-Type 5401-Type OT-363 OT-363, J-STD-020A MIL-STD-202, MMMDT5451 MMDT5451-7 BR 5551 code marking KNM BR N 5551 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 SOT-363 DUAL TRANSISTOR NPN+PNP FEATURES C1 B2 z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP)


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    OT-363 MMDT5451 OT-363 -120V -10mA -50mA -10mA, -50mA, PDF