5551 NPN Search Results
5551 NPN Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
|---|---|---|---|---|---|
| TPCP8514 |   | NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet | ||
| TTC5886A |   | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TPCP8513 |   | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet | ||
| TTC5810 |   | NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini | Datasheet | ||
| TTC019 |   | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini | Datasheet | 
5551 NPN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| 5551
Abstract: 5551 transistor 5551 datasheet 5401 555-1 
 | Original | VCEO160V 440um 440um 110um 110um 5551 5551 transistor 5551 datasheet 5401 555-1 | |
| 1N914 SOT-23
Abstract: ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G 
 | Original | MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 SOT-23 ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G | |
| 1N914 SOT-23
Abstract: MMBT550LT1 
 | Original | MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1 | |
| Contextual Info: MMDT5401 Dual Transistor NPN/PNP SOT-363 Features  Epitaxial Planar Die Construction  Complementary NPN Type Available(MMDT 5551)  Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol | Original | MMDT5401 OT-363 -100A -10mA -50mA 100MHz -200A, | |
| MMDT5401
Abstract: K4m TRANSISTOR J-STD-020A MMDT5401-7 MMDT5401-7-F 
 | Original | MMDT5401 OT-363, J-STD-020A MIL-STD-202, DS30169 MMDT5401 K4m TRANSISTOR J-STD-020A MMDT5401-7 MMDT5401-7-F | |
| 5551
Abstract: MMDT5401 
 | Original | OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz -200A, 5551 MMDT5401 | |
| 1N914
Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23 
 | Original | MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1G MMBT5551LT3 5551 SOT-23 | |
| Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160 | Original | MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D | |
| 5551
Abstract: F MARKING 
 | Original | BCP5551 OT-89 100MHz 01-Jun-2002 5551 F MARKING | |
| transistor 2N 5551
Abstract: 5551 transistor BR 5551 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn 2N5551 2N5550 
 | OCR Scan | 2N5400 2N5401 100MHz transistor 2N 5551 5551 transistor BR 5551 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn 2N5551 2N5550 | |
| Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching | Original | MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C MIL-STD-202, PNP5401) | |
| MMDT5401Contextual Info: MMDT5401 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMDT 5551 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) | Original | MMDT5401 OT-363 2002/95/EC MMDT5401 | |
| Contextual Info: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package | Original | MMDT5451 5551-Type 5401-Type OT-363 OT-363, MIL-STD-202, -10mA, -50mA, | |
| Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Also Available in Lead Free Version | Original | MMDT5401 OT-363 OT-363, J-STD-020A MIL-STD-202, DS30169 | |
|  | |||
| BR 5551
Abstract: 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor 
 | Original | WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz BR 5551 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor | |
| cd5551
Abstract: CD 5551 5551 2N5551 
 | Original | 2N5551 C-120 cd5551 CD 5551 5551 2N5551 | |
| PNP5401
Abstract: J-STD-020A MMDT5451 code marking KNM BR 5551 
 | Original | MMDT5451 5551-Type 5401-Type OT-363, J-STD-020A MIL-STD-202, NPN5551) PNP5401) PNP5401 J-STD-020A MMDT5451 code marking KNM BR 5551 | |
| K4m transistorContextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMDT 5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package C2 Case: SOT-363, Molded Plastic | Original | MMDT5401 OT-363 OT-363, J-STD-020A MIL-STD-202, MMDT5401-7 3000/Tape com/datasheets/ap02007 DS30169 K4m transistor | |
| Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP | Original | WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz | |
| Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching | Original | OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz | |
| Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR PNP+PNP SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary NPN Type Available(MMDT 5551) z Ideal for Medium Power Amplification and Switching | Original | OT-363 MMDT5401 OT-363 -10mA -50mA -10mA 100MHz | |
| BR 5551
Abstract: code marking KNM BR N 5551 
 | Original | MMDT5451 5551-Type 5401-Type OT-363 OT-363, J-STD-020A MIL-STD-202, MMMDT5451 MMDT5451-7 BR 5551 code marking KNM BR N 5551 | |
| Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 SOT-363 DUAL TRANSISTOR NPN+PNP FEATURES C1 B2 z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP) | Original | OT-363 MMDT5451 OT-363 -120V -10mA -50mA -10mA, -50mA, | |
| NCC 5551
Abstract: CC5551 NCC5551 transistor 9AW marking 9AW 5551 transistor equivalent transistor bce 50 53 transistor marking wt 
 | Original | CC5551 C-120 CC5551AI230801 NCC 5551 CC5551 NCC5551 transistor 9AW marking 9AW 5551 transistor equivalent transistor bce 50 53 transistor marking wt | |