554 -1 TRANSISTOR Search Results

transistor 554

Abstract: 554 -1 transistor F1042 Q62702-F1042 bf554
Contextual Info: NPN Silicon RF Transistor ● BF 554 For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 554 CC Q62702-F1042 B SOT-23 E C Maximum Ratings

Contextual Info: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23

Contextual Info: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary

Contextual Info: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package

2N4890

Abstract: 2N4033
Contextual Info: MOTOROLA SC XSTRS/R F lae D | fc,3b?554 00fib452 r-SL'hM 2N4890 CASE 79-04, STYLE 1 TO-39 TO-205AD MAXIMUM RATINGS Symbol Value Unft Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Vebo 5.0 . Vdc Rating Collector Current — Continuous

2SB554

Abstract: toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R
Contextual Info: 2 / U D > P N P = « f f i i b « . W h 5 ^ y 7 >‘9 SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR 2SB o 554 U n i t i n mm o 0 2 5 .0 MAX . P ow er A m p l i f i e r A p p l i c a t i o n s 3 • u ? milite a : * è i S iB - E - t - t o 0 2 1 .0 MAX Hr : P c = 150W

High frequency transistors

Contextual Info: BF 554 NPN High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung NPN 250 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca.

Contextual Info: T -3 1 -17 NPN Silicon RF Transistor 35E D • ' BF554 flS3b350 00Ib737 fl 1 S I P _ SIEMENS/ SPCLi SEMICONDS • General RF small-signal applications up to 300 MHz, amplifier, mixer and oscillator in circuits Type Marking Ordering code for versions In bulk

BF493

Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.

S100 NPN Transistor

Contextual Info: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .

2SD1378

Contextual Info: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „

smd rgs

Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

MG40S2YK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG40S2YK1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

NJD6513

Abstract: NJD6514 6512 6513 6514 TRANSISTOR darlington array mp 6514 5-30V NJD6511 NJD6512
Contextual Info: NPN TRA NS IST O R ARRAY NJM6511, 6512, 6513, 6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their internal suppression diodes insure freedom from problems associated with inductive

2n3019

Abstract: tfk 140 3019 npn transistor 554 -1 transistor
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: A llgem ein und Verstärker Applications: G eneral and a m plifier Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung

SanRex T25

Contextual Info: TR A NSISTO R M ODULE Q C A 5Q A A 120 UL;E76102 M QCA50AA12 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

2N6119-2N6120

Abstract: 2N6119 UNITRODE U-66 2N6120 2N61 unijunction application note UNITRODE TRANSISTORS
Contextual Info: p jjjg 2N6119-2N6120 Planar, TO-18, Hermetic FEATURES DESCRIPTION • • • • • • Functionally equivalent to standard unijunction transistors, Unitrode’s Programmable U nijunction Transistors offer the d istin ct advantage of versatile programming. External

KJE SOT-23

Abstract: BF993 BFT92 KJE transistor BFT93 Transistor BFR 35 BF994 14 SOT-23 RF Transistors sot-23 BFS17n
Contextual Info: MOS field-effect transistors Type Characteristics Tamb = 25 ° C Maximum ratings N channel '•'bs V Pto, h mA 9ts mS mW °C G dB V Kds Package outlines f M Hz Iq mA Pin configu­ ration No. Type BF 989 20 30 150 200 12 1 6 ,5 15 7 800 13 S O T 143 BF 993

Contextual Info: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc.

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

ses 554

Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
Contextual Info: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12

BF681

Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
Contextual Info: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure

SGSP477

Contextual Info: 3QE D • 7 ci 2 ci 2 3 7 QÜ3QQ35 f Z 7 S G S -T H O M S O N ^ 7 # [ ¡ « [ ^ » Ë ig T M l O t g S □ ■ 'T - 3 9 H 3 * g s -t h o m s o n S G S P 477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS on b SGSP477 200 V 0.17 ß 20 A

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the