554 -1 TRANSISTOR Search Results
554 -1 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLA1011-2 |
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Avionics LDMOS transistor |
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RX1214B300YI |
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RX1214B300Y - Microwave Power Transistor |
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CA3127MZ |
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CA3127 - Transistor Array |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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554 -1 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor 554
Abstract: 554 -1 transistor F1042 Q62702-F1042 bf554
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Original |
Q62702-F1042 OT-23 transistor 554 554 -1 transistor F1042 Q62702-F1042 bf554 | |
Contextual Info: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23 |
OCR Scan |
Q62702-F1042 OT-23 S35hDS fl235bDS | |
Contextual Info: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary |
OCR Scan |
MHM8N20HX, MHM8P20HX, | |
Contextual Info: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package |
OCR Scan |
IRF820 IRFS22 IRF823 O-220AB C-307 IRF820, IRF821, IRF822, IRF823 C-308 | |
2N4890
Abstract: 2N4033
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OCR Scan |
00fib452 2N4890 O-205AD) 2N4033 2N4890 | |
2SB554
Abstract: toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R
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OCR Scan |
2sb554 -10mA, -10V-IBf= 2SB554 S8B554â -20mA toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R | |
High frequency transistorsContextual Info: BF 554 NPN High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung NPN 250 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca. |
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OT-23 O-236) UL94V-0 High frequency transistors | |
Contextual Info: T -3 1 -17 NPN Silicon RF Transistor 35E D • ' BF554 flS3b350 00Ib737 fl 1 S I P _ SIEMENS/ SPCLi SEMICONDS • General RF small-signal applications up to 300 MHz, amplifier, mixer and oscillator in circuits Type Marking Ordering code for versions In bulk |
OCR Scan |
BF554 flS3b350 00Ib737 Q62702-F551 Q62702-F1042 fl23b es-10 | |
BF493
Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
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OCR Scan |
1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BF493 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553 ZTX554 | |
S100 NPN TransistorContextual Info: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 . |
OCR Scan |
GGQ4507 E--08 S100 NPN Transistor | |
2SD1378Contextual Info: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „ |
OCR Scan |
2SD1378 2SB1007. 2SD1378 | |
smd rgs
Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B
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KUK7607-55B O-263 smd rgs ld smd transistor smd 2U SMD Transistor nc KUK7607-55B | |
MG40S2YK1Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG40S2YK1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain |
OCR Scan |
MG40S2YK1 MG40S2YK1 | |
NJD6513
Abstract: NJD6514 6512 6513 6514 TRANSISTOR darlington array mp 6514 5-30V NJD6511 NJD6512
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OCR Scan |
NJM65Ã 500mA NJD6511 NJD6512 NJD6513 NJD6514 300mA 200mA 250mA 6512 6513 6514 TRANSISTOR darlington array mp 6514 5-30V | |
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2n3019
Abstract: tfk 140 3019 npn transistor 554 -1 transistor
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OCR Scan |
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SanRex T25Contextual Info: TR A NSISTO R M ODULE Q C A 5Q A A 120 UL;E76102 M QCA50AA12 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated |
OCR Scan |
E76102 QCA50AA12 QCA50AA120 600VT| SanRex T25 | |
2N6119-2N6120
Abstract: 2N6119 UNITRODE U-66 2N6120 2N61 unijunction application note UNITRODE TRANSISTORS
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OCR Scan |
2N6119-2N6120 150nA 2N6119-2N6120 2N6119 UNITRODE U-66 2N6120 2N61 unijunction application note UNITRODE TRANSISTORS | |
KJE SOT-23
Abstract: BF993 BFT92 KJE transistor BFT93 Transistor BFR 35 BF994 14 SOT-23 RF Transistors sot-23 BFS17n
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OCR Scan |
BF994 KJE SOT-23 BF993 BFT92 KJE transistor BFT93 Transistor BFR 35 14 SOT-23 RF Transistors sot-23 BFS17n | |
Contextual Info: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc. |
OCR Scan |
BSS100 003bl2b 0Q3bl37 D03fcil2fl | |
TC236Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP. |
OCR Scan |
2SC4885 SC-70 CO193 TC236 | |
ses 554
Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
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OCR Scan |
2369IR) ses 554 SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R | |
BF681
Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
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OCR Scan |
T15/S54. ft-11 569-GS 000s154 hal66 if-11 BF681 telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL | |
SGSP477Contextual Info: 3QE D • 7 ci 2 ci 2 3 7 QÜ3QQ35 f Z 7 S G S -T H O M S O N ^ 7 # [ ¡ « [ ^ » Ë ig T M l O t g S □ ■ 'T - 3 9 H 3 * g s -t h o m s o n S G S P 477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS on b SGSP477 200 V 0.17 ß 20 A |
OCR Scan |
3QQ35 SGSP477 SC-0008/1 SGSP477 | |
NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
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2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261 |