Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    530NH Search Results

    SF Impression Pixel

    530NH Price and Stock

    Select Manufacturer

    Pulse Electronics Corporation AWCM0011060530NH00

    - Tape and Reel (Alt: AWCM0011060530NH00)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AWCM0011060530NH00 Tape & Reel 36,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Bimba Manufacturing Company E-25-30-N-HR

    CYLINDER, PNEUMATIC, ISO 6432
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS E-25-30-N-HR Bulk 5 Weeks 1
    • 1 $121.96
    • 10 $121.96
    • 100 $121.96
    • 1000 $121.96
    • 10000 $121.96
    Get Quote

    Bimba Manufacturing Company EM-25-30-N-HR

    CYLINDER, PNEUMATIC, ISO 6432
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS EM-25-30-N-HR Bulk 5 Weeks 1
    • 1 $121.96
    • 10 $121.96
    • 100 $121.96
    • 1000 $121.96
    • 10000 $121.96
    Get Quote

    Bimba Manufacturing Company EM-25-30-N-HRY

    CYLINDER, PNEUMATIC, ISO 6432
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS EM-25-30-N-HRY Bulk 5 Weeks 1
    • 1 $317.16
    • 10 $317.16
    • 100 $317.16
    • 1000 $317.16
    • 10000 $317.16
    Get Quote

    Eaton Corporation HC9-2R2-R

    Power Inductors - SMD 2.2uH 26A 3.37mOhms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI HC9-2R2-R Reel 450
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.86
    • 10000 $2.86
    Buy Now

    530NH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    irf530300ns530nh PDF

    IRF530

    Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
    Contextual Info: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    irf530irf531irf532irf533+8rf1s530rf1s530smir irf532of irf530ta17411f531rf1s540rf1s540sm9a PDF

    IRFZ48N

    Abstract: IRFz48N MOSFET
    Contextual Info: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier


    OCR Scan
    irfz48nirfz48n mosfet PDF

    TA17411

    Contextual Info: IRF530, RF1S530SM S e m iconductor Data Sheet 14A, 100 V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan
    irf530rf1s530sm160i2ta17411 PDF