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    IRFZ48N Search Results

    IRFZ48N Datasheets (28)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRFZ48N
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ48N with Standard Packaging Original PDF 110.88KB 9
    IRFZ48N
    International Rectifier HEXFET Power MOSFET Original PDF 134.86KB 8
    IRFZ48N
    International Rectifier HEXFET Power MOSFET Original PDF 106.69KB 8
    IRFZ48N
    Philips Semiconductors N-channel enhancement mode TrenchMOS transistor Original PDF 51.07KB 8
    IRFZ48N
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRFZ48N
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 53A, Pkg Style TO-220AB Scan PDF 55.43KB 1
    IRFZ48NL
    International Rectifier HEXFET Power MOSFET Original PDF 132.95KB 10
    IRFZ48NL
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ48NL with Standard Packaging Original PDF 136.85KB 11
    IRFZ48NL
    International Rectifier HEXFET Power MOSFET Original PDF 158.98KB 10
    IRFZ48NL
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRFZ48NLPBF
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ48NL with Lead Free Packaging Original PDF 136.85KB 11
    IRFZ48NLPBF
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF 132.96KB 10
    IRFZ48NPBF
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRFZ48N in lead free packaging Original PDF 110.88KB 9
    IRFZ48NPBF
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF 106.68KB 8
    IRFZ48NS
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ48NS with Standard Packaging Original PDF 136.85KB 11
    IRFZ48NS
    International Rectifier HEXFET Power MOSFET Original PDF 158.98KB 10
    IRFZ48NS
    International Rectifier HEXFET - Power MOSFET Original PDF 132.95KB 10
    IRFZ48NS
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRFZ48NSPBF
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ48NS with Lead Free Packaging Original PDF 136.85KB 11
    IRFZ48NSPBF
    International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF 132.96KB 10
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    IRFZ48N Price and Stock

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    Infineon Technologies AG IRFZ48NSTRLPBF

    MOSFET N-CH 55V 64A D2PAK
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    DigiKey () IRFZ48NSTRLPBF Cut Tape 26,114 1
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    New Advantage Corporation IRFZ48NSTRLPBF 800 1
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    Rochester Electronics LLC AUIRFZ48N

    MOSFET N-CH 55V 69A TO220AB
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    DigiKey AUIRFZ48N Bulk 25,056 210
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    Infineon Technologies AG IRFZ48NPBF

    MOSFET N-CH 55V 64A TO220AB
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    DigiKey IRFZ48NPBF Tube 1,569 1
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    Avnet Americas () IRFZ48NPBF Bulk 1
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    Verical IRFZ48NPBF 31,452 21
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    Arrow Electronics IRFZ48NPBF 31,452 18 Weeks 1
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    Newark IRFZ48NPBF Bulk 11,589 1
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    RS IRFZ48NPBF Bulk 37 1
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    Bristol Electronics () IRFZ48NPBF 387 4
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    Quest Components IRFZ48NPBF 423
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    Infineon Technologies AG IRFZ48NL

    MOSFET N-CH 55V 64A TO262
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    DigiKey IRFZ48NL Tube 50
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    Infineon Technologies AG AUIRFZ48N

    MOSFET N-CH 55V 69A TO220AB
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    Rochester Electronics AUIRFZ48N 25,056 1
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    IRFZ48N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFZ48N

    Abstract: equivalent IRFZ48N
    Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRFZ48N O-220 O-220AB IRFZ48N equivalent IRFZ48N PDF

    Contextual Info: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve


    OCR Scan
    IRFZ48N O-220 0D5344b PDF

    IRFZ48N

    Contextual Info: PD - 9.1406A International IGR Rectifier IRFZ48N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss = 55 V ^ D S o n = 0.0160 lD = 64A Description


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    IRFZ48N IRFZ48N PDF

    sd32a

    Contextual Info: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power M OSFET • • • • • • Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V


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    IRFZ48NS) IRFZ48NL) IRFZ48NS/L po000 C-478 sd32a PDF

    IRFz48N MOSFET

    Abstract: IRFZ48N equivalent IRFZ48N
    Contextual Info: PD - 9.1406A IRFZ48N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier


    Original
    IRFZ48N O-220 IRFz48N MOSFET IRFZ48N equivalent IRFZ48N PDF

    AN-994

    Abstract: IRFZ48NL IRFZ48NS IRL3103L n mosfet low vgs
    Contextual Info: PD - 95125 l l l l l l l IRFZ48NSPbF IRFZ48NLPbF Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from


    Original
    IRFZ48NSPbF IRFZ48NLPbF IRFZ48NS) IRFZ48NL) EIA-418. AN-994 IRFZ48NL IRFZ48NS IRL3103L n mosfet low vgs PDF

    Contextual Info: PD - 94991A IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


    Original
    4991A IRFZ48NPbF O-220 PDF

    Contextual Info: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


    Original
    94991B IRFZ48NPbF O-220 PDF

    Contextual Info: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


    Original
    94991B IRFZ48NPbF O-220 PDF

    IRFZ48N

    Abstract: IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N FEATURES •Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION


    Original
    IRFZ48N IRFZ48N IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet PDF

    Contextual Info: PRELIMINARY International M R Rectifier PD 9.1408 IRFZ48NS HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description VDSS = 55V


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    IRFZ48NS PDF

    IRFz48N MOSFET

    Abstract: equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N
    Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRFZ48N O-220 IRFz48N MOSFET equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N PDF

    AN-994

    Abstract: IRFZ48NL IRFZ48NS IRL3103L
    Contextual Info: PD - 95125 l l l l l l l IRFZ48NSPbF IRFZ48NLPbF Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from


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    IRFZ48NSPbF IRFZ48NLPbF IRFZ48NS) IRFZ48NL) EIA-418. AN-994 IRFZ48NL IRFZ48NS IRL3103L PDF

    package marking y6

    Abstract: 220AB marking 7S
    Contextual Info: IRFZ48NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches TO-220AB Part Marking Information @Y6 HQG@) U CDTÃDTÃ6IÃDSA GPU Ã8P9@Ã  Ã & '( 6TT@H7G@9ÃPIÃXXÃ DIU@SI6U DPI6G ( Ã!  DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å Q6SU ÃIVH 7@S


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    IRFZ48NPbF O-220AB package marking y6 220AB marking 7S PDF

    Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRFZ48N O-220 PDF

    Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from


    Original
    1408B IRFZ48NS) IRFZ48NL) IRFZ48NS IRFZ48NL PDF

    IRFz48N MOSFET

    Abstract: IRFZ48N
    Contextual Info: PD - IRFZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 53A S Fifth Generation HEXFETs from International Rectifier


    Original
    IRFZ48N O-220 IRFz48N MOSFET IRFZ48N PDF

    TO-262

    Abstract: part marking information Marking information
    Contextual Info: IRFZ48NS/L Package Outline HEXFET TO-262 Outline Part Marking Information TO-262 IRFZ48NS/L Package Outline TO-262 Outline Part Marking Information HEXFET TO-262


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    IRFZ48NS/L O-262 O-262 TO-262 part marking information Marking information PDF

    IRFZ48NL

    Abstract: 1408B AN-994 IRFZ48NS
    Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from


    Original
    1408B IRFZ48NS) IRFZ48NL) IRFZ48NS IRFZ48NL IRFZ48NL 1408B AN-994 IRFZ48NS PDF

    Contextual Info: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ48NS • Low-profilethrough-hole(IRFZ48NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V


    OCR Scan
    IRFZ48NS) IRFZ48NL) PDF

    IRFZ48N

    Abstract: IRFz48N MOSFET
    Contextual Info: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier


    OCR Scan
    PDF

    AN-994

    Abstract: IRFZ48N IRFZ48NS
    Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1408 IRFZ48NS HEXFET Power MOSFET Advanced Process Technology l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS = 55V


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    IRFZ48NS AN-994 IRFZ48N IRFZ48NS PDF

    DSAUTAZ0071

    Abstract: TO-262
    Contextual Info: IRFZ48NS/L Package Outline TO-262 Outline Part Marking Information TO-262 IRFZ48NS/L Package Outline TO-262 Outline Part Marking Information HEXFET TO-262


    Original
    O-262 O-262 DSAUTAZ0071 TO-262 PDF

    IRFZ48NPBF

    Contextual Info: PD - 94991 IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


    Original
    IRFZ48NPbF O-220 for-220AB IRFZ48NPBF PDF