52B13 Search Results

vqc 10

Abstract: 52B13 52B33 SEEQ 52B33
Contextual Info: 52B13/52B23/52B33 52B13H/52B23H/52B33H Electrically Erasable R O M March 1983 P R O D U C T D E S C R IP T IO N Features • Input Latches ■ Single 5V Supply ■ Specified over V cc ±10% Range m TTL Byte Erase/Byte Write/Chip Clear ■ 1 ms or 10 ms Byte Erase/Byte Write

we vqe 24 d

Abstract: 52B33 TA 8445 45558 SEEQ 52B33 52B13 72482
Contextual Info: / 52B13/52B23/52B33 52B13H/52B23H/52B33H t r r '7 5 000701 P R E L IM IN A R Y D A TA S H E E T Electrically Erasable ROM March 1983 Features • In p u t L atch es ■ S ingle 5 V S u p p ly ■ S p ecified over \f e e ±10% R ange ■ T TL B yte E ras e/B y te W rite /C h ip C lear

intel 2816 eeprom

Abstract: INTEL D 2816 52B13 seeq 52b13 seeq 2816 eeprom 2816A eeprom 2816 eeprom intel SEEQ 2816 intel eeprom 2816 intel 2816
Contextual Info: 52B13/52B13H 16K Electrically Erasable P R O M October 1988 Features Description • Input Latches ■ TTL Byte Erase/Byte Write SEEQ's 52B13 and 52B13H are 2048 x 8 bit, 5 volt elec­ trically erasable programmable read only memories EEPROM with input latches on all address, data and

Contextual Info: 52B13/52B23/52B33 52B13H/52B23H/52B33H PR O D U C T D ES C R IPTIO N Electrically Erasable ROM Features Input Latches • ■ Single 5V Supply ■ Specified over Vq c ±10% Range m TTL Byte Erase/Byte W rite/Chip Clear ■ 1 ms or 10 ms Byte Erase/Byte Write

2816A eeprom

Contextual Info: G©Q 52B13/52B13H 16K Electrically Erasable P R O M October 1988 Description Features • ■ ■ ■ ■ ■ ■ Input Latches SEEQ's 52B13 and 52B13H are 2 0 4 8 x 8 bit, 5 volt elec­ trically erasable programmable read only memories EEPROM with input latches on all address, data and

DM52B13

Abstract: intel 2816A 52B13 2816A eeprom seeq 52b13 eeprom 2816A INTEL 2816 SEEQ 5213
Contextual Info: SEE<3 T E C H N O L O G Y INC M2E I B 011^233 0003037 2 * S E E 52B13/52B13H 16K Electrically Erasable PROM T-HL-iZ-i-l _ August 1991 Description Features • ■ m ■ ■ ■ ■ ■ ■ ■ Mlltary, Extended and Commercial Temperature

SEEQ 52B33

Abstract: 52B23 memory 52B13 WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S 52B33
Contextual Info: v. O c <F V 000701 r ^ %>' ,J> 7 52 B 13/ 52 B 23/ 52B 33 52B 13H / 52 B 23 H / 52 B 33H Electrically Erasable RO M March 1983 P R E L IM IN A R Y D A T A S H E E T Features • Input Latches ■ ■ ■ ■ ■ ■ ■ ■ th e o th e r d e v ic e s in th e fa m ily re q u ire o n ly a T TL

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

eeprom 2816A

Abstract: intel 2816A 2816A-350 2816A eeprom 52B13/H-200 CI EEPROM 2816 seeq 2816A 2816A/AH-300 52B13-3 intel 2816 eeprom
Contextual Info: - 2 8 16 m & ít £ ¿mSlEISI CC> 7, A -y * y ÍÍ TOE tt « VDD iE *5. 'im. A 1 DD/STANDBY VIL max V VIH min (V) Ci max (PF) V O L / I VOL max (V/mA) V O H / I VOH min (V/mA) Co max (PF) TAAC max (ns) TCAC max (ns) TOH max (ns) 4. 75-5. 25 80/30 0.8 2.0

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior

TMS27256

Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64

eeprom 2816

Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Contextual Info: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel

M2816

Abstract: 2316a
Contextual Info: 52B13/52B13H Military Temperature Range 52B13/52B13H (Extended Temperature Range) 16K Electrically Erasable PRO M _ October 1989 Features Description • Mlitary and Extended Temperature Range — 52B13/52B13H: -5 5 ° to 1100 C WRITE